BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 Collector-emitter voltage (+ Vag = 1 V) -~VcEx max. 30 50 V Collector-emitter voltage (open base) ~VcEQ max. 30 45 Vv Collector current (peak value) ley max. 200 200 mA Total power dissipation up to Tamb = 60 C Prot max. 250 250 mw Junction temperature qj max. 150 150 oC; DC current gain > 125 125 -le =2mA;~-Veep=5V hte < 800 300 Transition frequency Ic = 10mA;-Vce=5V fr > 100 100 MHz Noise figure at Rg = 2 kQ le = 200 uA; -Vcp =5V _ . typ. 1,2 1 dB f = 30 Hz to 15 kHz F < 4 3 dB f= 1kHz; B = 200 Hz F < 4 4 dB MECHANICAL DATA Dimensions in mm Marking code: Fig. 1 SOT-23. 30 BC859 += 4Dp gO BC859A = 4Ap BC859B = 4Bp < [1.9] > BC859C = 4Cp | 10.95) < BC860 = 4Hp [a] [=[o2@[4]8) acscoa = 4Ep BC860B = 4Fp 2 | l BC860C = 4Gp T + } | 14 25 Pinning: 1.2 max 1 = base | 2 = emitter 4 3 = collector 3] 5 | c 0.48 or 0.1 [A] B | 72968851 b TOP VIEW Reverse pinning types are available on request. MBB018 e September 1994 187BC859 BC860 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter} VcBO Collector-emitter voltage (+ Vge = 1 V) VCEX Collector-emitter voltage (open base) ~VcEO Emitter-base voltage (open collector) -VEBO Collector current (d.c.) -Ic Collector current (peak value) lcm Emitter current (peak value) lem Base current (peak value) IpmM Total power dissipation up to Tamp = 25 OC Prot Storage temperature Tstg Junction temperature T; ! THERMAL CHARACTERISTICS Thermal resistance From junction to amb Rth j-t CHARACTERISTICS Tj = 25 OC unless otherwise specified Collector cut-off current le = 0; -Vcp = 30 ViTj= 25 0C -IcBoO TF 150 C -IcBo Base-emitter voltage 4 -le= 2mA;-Vcp=5V VpE -I= 10 mA;-Vcp=5V VpBE * max. max. Mourtcd on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. & Vee decreaes by about 1./K with increasing temperature. BC859 BC860 30 50 30 50 30 45 5 5 100 200 200 200 250 65 to + 150 150 500 650 600 to 750 820 <<<cc mA mA mA mW 9 C K/W nA nA uA mv mV mV 188 September 1994Silicon planar epitaxial transistors BC859 Saturation voltages* -Ice= 10mA;lg =0,5mA Il = 100 mA;-igp=5mA Collector capacitance at f = 1 MHz le =1,=0;-Vop=10V Transition frequency at f = 100 MHz I = 10mA;VcE = 5 V Small-signal current gain at f = 1 kHz -Ie=2mA;-Vcp=5V Noise figure at Rg = 2 kQ. -lce= 200 vA;-Vcp =5V f = 30 Hz to 15 kHz f= 1 kHz; B = 200 Hz Equivalent noise voltage at Rg = 2 kQ. ~Ic = 200 wA;-Vcp=5V f= 10 Hz to 50 Hz; Tamb = 25 OC D.C. current gain Iq=2mA;Vce = V; total range A selections B selections C selections VCEsat VBEsat -VCEsat VBEsat fT fe BC860 typ. 75 mv < 300 mV typ. 700 mV typ. 250 mV < 650 mV typ. 850 mV typ. 45 pF > 100 MHz 125 to 800 BC859 | BC8&60 typ. 1,2 1 < 4 3 typ. 1 1 < 4 4 < - 0,11 125 to 800 125 to 250 220 to 475 420 to 800 * VBEsat decreases by about 1,7 mV/K with increasing temperature. dB dB dB dB uv September 1994 189