eee 3875081 G SOLID STATE OL DE(}3a750a1 oorsyua 9 ff | T-39-// Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N10L File Number 1512 N-Channel Logic Level Power Field-Effect Transistors (L? FET) 8 A, 180 V and 200 V 0 ros(On): 0.2.9 Features: | Design optimized for 5 volt gate drive @ Can be driven directly from Q-MOS, N-MOS, TTL Circuits 6 * = Compatible with automotive drive requirements = SOA is power-dissipation limited . Nanosecond switching speeds ~ w Linear transfer charactoristics 9208-339" High input impedance m Majority carrier device N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS The RFM12NO8L and RFM12N10L and the RFP12NO8L and RFP12N10L are n-channel enhancement-mode silicon-gate RFM12NO8L source pean power field-effect transistors specifically designed for use RFM12N10L with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through g a special gate oxide design which provides full rated con- duction at gate blases in the 3-5 volt range, thereby facilitat- GATE ozcsesrsss ing true on-off power control directly from logle circuit d supply voitages. JEDEC TO-204AA The RFN-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the REP12NO8L JEDEC TO-220A8 plastic package. REP12N10L Because of space limitations branding (marking) on type SOURCE RFP12N08L is F12NO8L and on type RFP12N10L is onan ol | FI2N10L, (FLANGE) O i The RFM and RFP series were formerly RCA developmen- TOP View Late tal number TA9526 and TA9527. . 9203-39526 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM12NO08L RFM12N10L AFP 12NOSL RAFPI2N10L DRAIN-SOURCE VOLTAGE .,....essee Voss 80 100 80 100 v DRAIN-GATE VOLTAGE (Ros?1MQ) .... Voor 80 100 80 100 Vv GATE-SOURCE VOLTAGE .....5. pesos Vos +10 Vv DRAIN CURRENT, RMS Continuous ...... lo 12 A Pulsed oo cscsseeeeees on 30 : A POWER DISSIPATION @ Tc=28C ..,.... P, 75 75 60 60 Ww Derate above To=25C 0.6 0.6 0.48 0.48 WC OPERATING AND STORAGE TEMPERATURE on. cc cseseeeenanes Th Tag BS tO 4150 c 392 _3875081 G E SOLID STATE Ol a | 3875041 Oo,eyy4 of > T3971] : Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N10L ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25 C unless otherwise specified. ay : , : LIMITS - TEST REM12NO8L RFM12N10L CHARACTERISTIC SYMBOL | CONDITIONS RFP12NO8L REPt2NioL _| UNITS MIN. MAX, MIN. MAX. Drain-Source Breakdown Voltage BYpos Ie mA 60 - 100 - v . os Gate Threshold Voltage Vas(th) Ves=Vos 1 2 1 2 Vv Ip=1 MA Zerg Gate Voltage Drain Current loss Vos=65 V - 1 _ = Vos=80 V =_ - - 1 Tc=125C HA Vps=65 V - 50 - - Vos=80 V = = _ 50 Gate-Source Leakage Current lass Vos #10 Vv _ 100 _- 100 nA og= Drain-Source On Voltage Vos(on)* In=6 A. - 1.2 - 1.2 Vos=5 V Vv IDz12A - 33 _ 3.3 - Ves=5 Vv Static Drain-Source On Resistance Tos(on)* lo=6 A - 0.2 - 0.2 Q Vos=5 Vv Forward Transcanductance Ot Vos=10 V 4.0 _ 40 _ mho loz6 A Input Capacitance. Cis Vos=25 V _ 900 _- 900 Output Capacitance Coss Vas=0 V = 325 = 325 pF Reverse-Transfer Capacitance Crs f=1MHz - 100 = 100 Turn-On Delay Time tu{on) Voo=50 V 15(typ) 50 15(typ) 50 Rise Time t lo=6 A 7O(typ) | _150__[ 7O(typ) | _, 150 ns Turn-Off Delay Time ta(oft) Pye 6.25 Q 400(typ) |_130 | 100(typ)| 130 Fall Time tr Vas=5 V 80(typ) 150 80(typ) 150 Thermal Resistance RAs RFM12NO8L, - 1.67 ~~ 1.67 Junction-to-Case RFEM12N10L RFP12NO8L, | 2083 | | 2083) CW RFP12N10L *Pulsed: Pulse duration = 300 ys max,, duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST RAFM12NO08L RFM12N10L CHARACTERISTIC SYMBOL | conDITIONS RFP12NO8L RFPi2Nio.__| UNITS MIN, MAX, MIN. MAX. Diode Forward Voltage Vso Isp=6 A ~ 1.4 _ 1.4 Vv Reverse Recovery Time tr 1r=4 A 180(typ) 180(typ) ns dir/d,= 100 A/ps Pulse Test: Width < 300 ps, duty cycle < 2%. 393~ . OL DE sa7soas 0018450 7 i - 3875081 G E SOLID STATE 0 O1 18450 0 T-39-/) Logic-Level Power MOSFETs RFM12NO8L, RFM12N10L, RFP12NO8L, RFP12N40L *) (CURVES MUST BE LINEARLY WITH INCREASE IN TEMPERATURE} Tp (MAX) a? ~ a OPERATION IN THIS REGION IS LIMITEO BY fogton} . DRAIN CURRENT (Ip)A {MAX} 60 V RFMIZNOBL 7] vogs (MAX. 100V RFMI2N o 4 a lo 2 4 6 00 2 DRAIN-TO-SOURCE VOLTAGE (Vpsi-V 9208-37392 Fig, 1 Maximum operating areas for all types. 2 68 1000 3v RFPIZNOSL RFPIZNIOL = VUNCTION TEMPERATURE (Ty }~ C stcses7Z 9205-37393 Fig, 2 Power dissipation vs. temperature derating curve for all types. Tp<6a Yes s5 [go JUNCTION TEMPERATURE (Tyl-* 9208-37212 Fig. 4 Normalized drain-to-source on resistance to junction tamperature for all types. 394 Fig. 3 Typical normalized gate threshold voltage as a function of junction temperature for all types, q tov TEST PULSE OURATION GATE~ TO SOURCE. VOLTAGE { Ve) -V 92CS- 37218 Fig. Typical transfer characteristics for all types.3675081 GE Sotio state [8 pe 3e7s0a1 cores, 9 Wf. UTE 18451 D T 39-/1 Logic-Level Power MOSFETs RFM12NO08L, RFM12N10L, RFP12NO8L, RFP12N10L " PULSE TEST PULSE QURATION 80 n8 DUTY CYCLE s . AL = 833 . CASE TEMPERATURE (Tq 1 #25C 1s) Ig (REF) = 0-46 ma Vos = 5 2 be 3a 3 GATE SOURCE 3 > VOLTAGE 1 50) t a8 42 * oO Ig (REF bad igiacn TIME Mr di evonsconss menanees ORAIN-TO-SOURCE VOLTAGE {Vpg) || $2C8- 37215 Fig. 6 - Normalized switching wavetorms for constant gate-current Fig. 7 Typical saturation characteristics for all types. drive. FREQUENCY (f) = 1 MHz o a PULSE OURATION 80,5 OUTY CYCLES 2% OHMS: o nN Cepstonid DRAIN-TO~SOURCE ON RESISTANCE 10 18 20,8530 DRAIN CURRENT (Ip I-A ORAIN- TO- 92CS- 37216 92C8-37217 Fig. 8 Typical drain-to-source on resistance as a function Fig. 9 Capacitance as a function of drain-to-source of drain current for all types. voltage for ail types. Yo To SCOPE = Yoo w SOV KELVIN CONTACT PULSE TEST PULSE OQURATION 80us DUTY CYCLE 2% FORWARD TRAN SCONDUCTANCE 92CS$-37359 9 3 GRAIN CURRENTIIpI-A 9268-37218 Fig. 10 ~ Typical forward transconductance as a function Fig. 11 Switching Time Test Circuit. of drain current for all types. 395