AS7C1024B 5V 128K X 8 HIGH SPEED CMOS SRAM Revision History AS7C1024B Revision Details Date Rev 1.0 Preliminary datasheet prior to 2004 Rev 1.1 Die Revision A to B March 2004 Rev 2.0 PCN issued yield issues with industrial temperature TJ = SOJ 300 mil-10/12ns May 2015 *Please note we will still offer 10/12/15/20 ns address access speed options in commercial temperatures in other packages Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 0 Rev2.0 May 2015 March 2004 AS7C1024B (R) 5V 128K X 8 CMOS SRAM Features * Industrial and commercial temperatures * Organization: 131,072 words x 8 bits * High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time * Low power consumption: ACTIVE - 300 mil SOJ 400 mil SOJ 8 x 20mm TSOP 1 8 x 13.4mm sTSOP 1 * ESD protection 2000 volts * Latch-up current 200 mA - 605 mW / max @ 10 ns * Low power consumption: STANDBY - 55 mW / max CMOS Pin arrangement 32-pin SOJ (300 mil) 32-pin SOJ (400 mil) Logic block diagram NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC GND 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 32-pin (8 x 20mm) TSOP I 32-pin (8 x 13.4mm) sTSOP1 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 I/O0 Control circuit A9 A10 A11 A12 A13 A14 A15 A16 Column decoder I/O7 WE OE CE1 CE2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 AS7C1024B 512 x 256 x 8 Array (1,048,576) Sense amp A0 A1 A2 A3 A4 A5 A6 A7 A8 Row decoder Input buffer 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 AS7C1024B * 6T 0.18u CMOS technology * Easy memory expansion with CE1, CE2, OE inputs * TTL/LVTTL-compatible, three-state I/O * 32-pin JEDEC standard packages OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Selection guide -10 -12 -15 -20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 5 6 7 8 ns Maximum Operating Current 110 100 90 80 mA Maximum CMOS standby Current 10 10 10 10 mA May 2015 v2.0 Alliance Memory Inc P. 1 of 9 Copyright (c) Alliance Memory Inc. All rights reserved. AS7C1024B (R) Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems. When CE1 is high or CE2 is low, the devices enter standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full standby power is reached (ISB1). For example, the AS7C1024B is guaranteed not to exceed 55 mW under nominal full standby conditions. A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive I/ O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. Absolute maximum ratings Symbol Min Max Unit Voltage on VCC relative to GND Parameter Vt1 -0.50 +7.0 V Voltage on any pin relative to GND Vt2 -0.50 VCC +0.50 V Power dissipation PD - 1.0 W Storage temperature (plastic) Tstg -65 +150 C Ambient temperature with VCC applied Tbias -55 +125 C DC current into outputs (low) IOUT - 20 mA Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE1 CE2 WE OE Data Mode H X X X High Z Standby (ISB, ISB1) X L X X High Z Standby (ISB, ISB1) L H H H High Z Output disable (ICC) L H H L DOUT Read (ICC) L H L X DIN Write (ICC) Key: X = don't care, L = low, H = high May 2015 v 2.0 Alliance Memory Inc P. 2 of 9 AS7C1024B (R) Recommended operating conditions Parameter Supply Voltage Min Nominal Max Unit VCC 4.5 5.0 5.5 V VIH 2.2 - VCC + 0.5 V VIL -0.5 - 0.8 V commercial TA 0 - 70 C industrial TA -40 - 85 C Input Voltage Ambient operating temperature Symbol VIL min = -1.0V for pulse width less than 5ns VIH max = VCC+2.0V for pulse width less than 5ns. DC operating characteristics (over the operating range)1 -10 Parameter -12 -15 -20 Unit Sym Test conditions Min Max Min Max Min Max Min Max Input leakage current |ILI| VCC = Max, VIN = GND to VCC - 1 - 1 - 1 - 1 A Output leakage current |ILO| VCC = Max, CE1 = VIH or CE2 = VIL, VOUT = GND to VCC - 1 - 1 - 1 - 1 A Operating power supply current ICC VCC = Max, CE1 VIL, CE2 VIH, f = fMax, IOUT = 0 mA - 110 - 100 - 90 - 80 mA ISB VCC = Max, CE1 VIH and/or CE2 VIL, f = fMax - 50 - 45 - 45 - 40 Standby power supply current Output voltage VCC = Max, CE1 VCC-0.2V mA ISB1 and/or CE2 0.2V VIN 0.2V or VIN VCC - 0.2V, f = 0 - 10 - 10 - 10 - 10 VOL IOL = 8 mA, VCC = Min - 0.4 - 0.4 - 0.4 - 0.4 VOH IOH = -4 mA, VCC = Min 2.4 - 2.4 - 2.4 - 2.4 - V Capacitance (f = 1 MHz, Ta = 25 C, VCC = NOMINAL)2 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE1, CE2, WE, OE VIN = 0V 5 pF I/O capacitance CI/O I/O VIN = VOUT = 0V 7 pF May 2015 v 2.0 Alliance Memory Inc. P. 3 of 9 AS7C1024B (R) Read cycle (over the operating range)3,9,12 -10 Parameter -12 -15 -20 Symbol Min Max Min Max Min Max Min Max Unit Notes Read cycle time tRC 10 - 12 - 15 - 20 - ns Address access time tAA - 10 - 12 - 15 - 20 ns 3 Chip enable (CE1) access time tACE1 - 10 - 12 - 15 - 20 ns 3, 12 Chip enable (CE2) access time tACE2 - 10 - 12 - 15 - 20 ns 3, 12 Output enable (OE) access time tOE - 5 - 6 - 7 - 8 ns Output hold from address change tOH CE1 Low to output in low Z tCLZ1 3 - 3 - 3 - 3 - ns 5 3 - 3 - 3 - 3 - ns 4, 5, 12 CE2 High to output in low Z tCLZ2 3 - 3 - 3 - 3 - ns 4, 5, 12 CE1 Low to output in high Z tCHZ1 - 4 - 5 - 6 - 7 ns 4, 5, 12 CE2 Low to output in high Z tCHZ2 - 4 - 5 - 6 - 7 ns 4, 5, 12 OE Low to output in low Z tOLZ 0 - 0 - 0 - 0 - ns 4, 5 OE High to output in high Z tOHZ - 4 - 5 - 6 - 7 ns 4, 5 Power up time tPU 0 - 0 - 0 - 0 - ns 4, 5, 12 Power down time tPD - 10 - 12 - 15 - 20 ns 4, 5, 12 Key to switching waveforms Rising input Falling input Undefined / don't care Read waveform 1 (address controlled)3,6,7,9,12 tRC Address tAA tOH DOUT Data valid Read waveform 2 (CE1, CE2, and OE controlled)3,6,8,9,12 tRC1 CE1 CE2 tOE OE DOUT Current supply May 2015 V 2.0 tOHZ tCHZ1, tCHZ2 tOLZ tACE1, tACE2 tCLZ1, tCLZ2 tPU Data valid tPD 50% ICC ISB 50% Alliance Memory Inc P. 4 of 9 AS7C1024B (R) Write cycle (over the operating range)11, 12 -10 Parameter Symbol -12 Min Max Min -15 Max -20 Min Max Min Max Unit Notes Write cycle time tWC 10 - 12 - 15 - 20 - ns Chip enable (CE1) to write end tCW1 8 - 9 - 10 - 12 - ns 12 Chip enable (CE2) to write end tCW2 8 - 9 - 10 - 12 - ns 12 Address setup to write end tAW 8 - 9 - 10 - 12 - ns Address setup time tAS 0 0 - 0 - 0 - ns Write pulse width tWP 7 8 - 9 - 12 - ns Write recovery time tWR 0 - 0 - 0 - 0 - ns Address hold from end of write tAH 0 - 0 - 0 - 0 - ns Data valid to write end tDW 5 6 - 8 - 10 - ns Data hold time tDH 0 0 - 0 - 0 - ns 12 4, 5 Write enable to output in high Z tWZ - 5 - 6 - 7 - 8 ns 4, 5 Output active from write end tOW 1 - 1 - 1 - 2 - ns 4, 5 Write waveform 1 (WE controlled)10,11,12 tWC tWR tAH tAW Address tWP WE tAS tDW DIN tDH Data valid tWZ tOW DOUT May 2015 v 2.0 Alliance Memory Inc. P. 5 of 9 AS7C1024B (R) Write waveform 2 (CE1 and CE2 controlled)10,11,12 tAW tWC tAH tWR Address tAS tCW1, tCW2 CE1 CE2 tWP WE tWZ tDW DIN tDH Data valid DOUT AC test conditions - - - - Output load: see Figure B. Input pulse level: GND to 3.5V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V. +5V Thevenin equivalent: 168 480 +3.5V GND 90% 10% 90% 2 ns 10% Figure A: Input pulse DOUT 255 C13 DOUT +1.728V GND Figure B: 5V Output load Notes 1 2 3 4 5 6 7 8 9 10 11 12 13 During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification. This parameter is sampled and not 100% tested. For test conditions, see AC Test Conditions, Figures A and B. tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured 500 mV from steady-state voltage. This parameter is guaranteed, but not 100% tested. WE is high for read cycle. CE1 and OE are low and CE2 is high for read cycle. Address valid prior to or coincident with CE1 transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. N/A All write cycle timings are referenced from the last valid address to the first transitioning address. CE1 and CE2 have identical timing. C = 30 pF, except all high Z and low Z parameters where C = 5 pF. May 2015 v.2.0 Alliance Memory Inc. P. 6 of 9 AS7C1024B (R) Package dimensions D 32-pin SOJ 300 mil e E1E2 B Pin 1 c A A1 A2 b Seating Plane E Min Max Min Max A 0.128 0.145 0.132 0.146 A1 0.025 - 0.025 - A2 0.095 0.105 0.105 0.115 B 0.026 0.032 0.026 0.032 b 0.016 0.020 0.015 0.020 c 0.007 0.010 0.007 0.013 D 0.820 0.830 0.820 0.830 E 0.255 0.275 0.354 0.378 E1 0.295 0.305 0.395 0.405 E2 0.330 0.340 0.435 0.445 e b 0.050 BSC e 0.050 BSC 32-pin TSOP 8x20 mm Min c D Hd A2 L pin 1 E May 2015 v 2.0 32-pin SOJ 400 mil pin 16 A A1 pin 32 pin 17 Alliance Memory Inc Max A - 1.20 A1 0.05 0.15 A2 0.95 1.05 b 0.17 0.27 c 0.10 0.21 D 18.30 18.50 e 0.50 nominal E 7.90 8.10 Hd 19.80 20.20 L 0.50 0.70 0 5 P. 7 of 9 AS7C1024B (R) Ordering codes Package \ Access time Plastic SOJ, 300 mil Plastic SOJ, 400 mil TSOP1 8x20 mm sTSOP1 8 x 13.4mm Temp commercial 10 ns 12 ns 15 ns 20 ns AS7C1024B-10TJC AS7C1024B-12TJC AS7C1024B-15TJC AS7C1024B-20TJC - AS7C1024B-12TJI AS7C1024B-15TJI AS7C1024B-20TJI AS7C1024B-10JC AS7C1024B-12JC AS7C1024B-15JC AS7C1024B-20JC - AS7C1024B-12JI AS7C1024B-15JI AS7C1024B-20JI AS7C1024B-10TC AS7C1024B-12TC AS7C1024B-15TC AS7C1024B-20TC AS7C1024B-10STC AS7C1024B-12STC AS7C1024B-15STC AS7C1024B-20STC industrial commercial industrial commercial commercial industrial - AS7C1024B-12STI AS7C1024B-15STI AS7C1024B-20STI Note: Add suffix `N' to the above part number for LEAD FREE PARTS (Ex: AS7C1024B-10TCN) Part numbering system AS7C 1024B -XX X X X SRAM prefix Device number Access time Package:T = TSOP1 8x20 mm ST = sTSOP1 8 x 13.4 mm J = SOJ 400 mil TJ = SOJ 300 mil Temperature range C = Commercial, 0 C to 70 C I = Industrial, -40 C to 85 C N = LEAD FREE PART May 2015 v 2.0 Alliance Memory Inc P. 8 of 9 (R) (R) Alliance Memory, Inc. 511 Taylor Way, San Carlos, CA 94070 Tel: 650-610-6800 Fax: 650-620-9211 www.alliancememory.com Copyright (c) Alliance Memory All Rights Reserved Part Number: AS7C1024B Document Version: v. 2.0 (c) Copyright 2003 Alliance Memory, Inc. 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