AS7C1024B
5V 128K X 8 HIGH SPEED CMOS SRAM
Revision History AS7C1024B
Revision Details Date
Rev 1.0 Preliminary datasheet prior to 2004
Rev 1.1 Die Revision A to B March 2004
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice.
0 Rev2.0 May 2015
Rev 2.0 PCN issued yield issues with industrial temperature TJ = SOJ 300 mil-10/12ns May 2015
*Please note we will still offer 10/12/15/20 ns address access speed options in commercial temperatures in other packages
March 2004
Copyright © Alliance Memory Inc. All rights reserved.
®
AS7C1024B
5V 128K X 8 CMOS SRAM
May 2015 v2.0 Alliance Memory Inc P. 1 of 9
Features
• Industrial and commercial temperatures
• Organization: 131,072 words x 8 bits
• High speed
- 10/12/15/20 ns address access time
- 5/6/7/8 ns output enable access time
• Low power consumption: ACTIVE
- 605 mW / max @ 10 ns
• Low power consumption: STANDBY
- 55 mW / max CMOS
• 6T 0.18u CMOS technology
• Easy memory expansion with CE1, CE2, OE inputs
• TTL/LVTTL-compatible, three-state I/O
• 32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 × 20mm TSOP 1
- 8 x 13.4mm sTSOP 1
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
512 x 256 x 8
Array
(1,048,576)
Sense amp
Input buffer
A10
A11
A12
A13
A14
A15
A16
I/O0
I/O7
OE
CE1
WE
Column decoder
Row decoder
Control
circuit
A9
A0
A1
A2
A3
A4
A5
A6
A7
V
CC
GND
A8
CE2
Pin arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
AS7C1024B
32-pin SOJ (300 mil)
VCC
A15
CE2
WE
A13
A8
A9
A11 OE
A10
CE1
I/O7
I/O6
I/O4
NC
A16
A14
A12
A7
A6
A5
A4 A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
I/O5
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
32
31
30
29
28
27
26
25
24
23
22
21
AS7C1024B
20
19
15
16 18
17
32-pin (8 x 20mm) TSOP I
32-pin SOJ (400 mil)
32-pin (8 x 13.4mm) sTSOP1
Selection guide -10 -12 -15 -20 Unit
Maximum address access time 10 12 15 20 ns
Maximum output enable access
time 56 7 8ns
Maximum Operating Current 110 100 90 80 mA
Maximum CMOS standby Current 10 10 10 10 mA
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Functional description
The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8
bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low, the devices enter standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is
static, then full standby power is reached (ISB1). For example, the AS7C1024B is guaranteed not to exceed 55 mW under nominal full standby
conditions.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0 through I/O7 is
written on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive I/
O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is active,
output drivers stay in high-impedance mode.
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Key: X = don’t care, L = low, H = high
Absolute maximum ratings
Parameter Symbol Min Max Unit
Voltage on VCC relative to GND Vt1 –0.50 +7.0 V
Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V
Power dissipation PD–1.0W
Storage temperature (plastic) Tstg –65 +150 °C
Ambient temperature with VCC applied Tbias –55 +125 °C
DC current into outputs (low) IOUT –20mA
Truth table
CE1
CE2
WE OE
Data Mode
H X X X High Z Standby (ISB, ISB1)
X L X X High Z Standby (ISB, ISB1)
L H H H High Z Output disable (ICC)
LHHL D
OUT Read (ICC)
LHLX D
IN Write (ICC)
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Capacitance (f = 1 MHz, Ta = 25 °C, VCC = NOMINAL)2
Parameter Symbol Signals Test conditions Max Unit
Input capacitance CIN A, CE1, CE2, WE, OE VIN = 0V 5 pF
I/O capacitance CI/O I/O VIN = VOUT = 0V 7 pF
Recommended operating conditions
VIL min = -1.0V for pulse width less than 5ns
VIH max = VCC+2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)1
Parameter Symbol Min Nominal Max Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Input Voltage VIH 2.2 - VCC + 0.5 V
VIL –0.5 – 0.8 V
Ambient operating
temperature
commercial TA0–70°C
industrial TA–40 – 85 °C
Parameter Sym Test conditions -10 -12 -15 -20 Unit
Min Max Min Max Min Max Min Max
Input leakage
current |ILI|V
CC = Max, VIN = GND to VCC -1–1–1–1µA
Output leakage
current |ILO|VCC = Max, CE1 = VIH or
CE2 = VIL, VOUT = GND to VCC
-1–1–1–1µA
Operating power
supply current ICC
VCC = Max, CE1 ≤ VIL,
CE2 ≥ VIH, f = fMax,
IOUT = 0 mA
- 110 – 100 – 90 – 80 mA
Standby power
supply current
ISB
VCC = Max, CE1 ≥ VIH and/or
CE2 ≤ VIL, f = fMax
-50–45–45–40
mA
ISB1
VCC = Max, CE1 ≥ VCC–0.2V
and/or CE2 ≤ 0.2V
VIN ≤ 0.2V or
VIN ≥ VCC – 0.2V, f = 0
-10–10–10–10
Output voltage VOL IOL = 8 mA, VCC = Min - 0.4 – 0.4 – 0.4 – 0.4 V
VOH IOH = –4 mA, VCC = Min 2.4 - 2.4 – 2.4 – 2.4 –
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Read cycle (over the operating range)3,9,12
Parameter Symbol -10 -12 -15 -20 Unit NotesMin Max Min Max Min Max Min Max
Read cycle time tRC 10-12–15–20–ns
Address access time tAA -10–12–15–20ns 3
Chip enable (CE1) access time tACE1 -10–12–15–20ns3, 12
Chip enable (CE2) access time tACE2 -10–12–15–20ns3, 12
Output enable (OE) access time tOE -5–6–7–8ns
Output hold from address change tOH 3-3–3–3–ns 5
CE1 Low to output in low Z tCLZ1 3 - 3 – 3 – 3 – ns 4, 5, 12
CE2 High to output in low Z tCLZ2 3 - 3 – 3 – 3 – ns 4, 5, 12
CE1 Low to output in high Z tCHZ1 - 4 – 5 – 6 – 7 ns 4, 5, 12
CE2 Low to output in high Z tCHZ2 - 4 – 5 – 6 – 7 ns 4, 5, 12
OE Low to output in low Z tOLZ 0-0–0–0–ns4, 5
OE High to output in high Z tOHZ –4–5–6–7ns4, 5
Power up time tPU 0 - 0 – 0 – 0 – ns 4, 5, 12
Power down time tPD –10–12–15–20ns4, 5, 12
Key to switching waveforms
Read waveform 1 (address controlled)3,6,7,9,12
Read waveform 2 (CE1, CE2, and OE controlled)3,6,8,9,12
Undefined / don’t careFalling inputRising input
Address
D
OUT
Data valid
t
OH
t
AA
t
RC
supply
Current
CE2
OE
D
OUT
t
OE
t
OLZ
t
ACE1
,
tACE2
t
CHZ1
, t
CHZ2
t
CLZ1
, t
CLZ2
t
PU
t
PD
I
CC
I
SB
50% 50%
Data valid
t
RC1
CE1
t
OHZ
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Write waveform 1 (WE controlled)10,11,12
Write cycle (over the operating range)11, 12
Parameter Symbol -10 -12 -15 -20 Unit NotesMin Max Min Max Min Max Min Max
Write cycle time tWC 10 - 12 – 15 – 20 – ns
Chip enable (CE1) to write end tCW1 8 - 9 – 10 – 12 – ns 12
Chip enable (CE2) to write end tCW2 8 - 9 – 10 – 12 – ns 12
Address setup to write end tAW 8 - 9 – 10 – 12 – ns
Address setup time tAS 00–0–0–ns12
Write pulse width tWP 78–9–12–ns
Write recovery time tWR 0-0 – 0–0– ns
Address hold from end of write tAH 0-0 – 0–0– ns
Data valid to write end tDW 56–8–10–ns
Data hold time tDH 00–0–0–ns4, 5
Write enable to output in high Z tWZ - 5 – 6 – 7 – 8 ns 4, 5
Output active from write end tOW 1 - 1 – 1 – 2 – ns 4, 5
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
t
WZ
t
WP
t
AS
Data valid
D
IN
t
WR
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Write waveform 2 (CE1 and CE2 controlled)10,11,12
AC test conditions
Notes
1 During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
2 This parameter is sampled and not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A and B.
4t
CLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500 mV from steady-state voltage.
5 This parameter is guaranteed, but not 100% tested.
6WE
is high for read cycle.
7CE1
and OE are low and CE2 is high for read cycle.
8 Address valid prior to or coincident with CE1 transition Low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
t
AW
Address
CE1
WE
D
OUT
t
CW1
, t
CW2
t
WP
t
DW
t
DH
t
AH
t
WZ
t
WC
t
AS
CE2
Data valid
D
IN
t
WR
– Output load: see Figure B.
– Input pulse level: GND to 3.5V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
168
Ω
Thevenin equivalent:
D
OUT
+1.728V
255
Ω
C
13
480
Ω
D
OUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.5V
Figure A: Input pu lse
2 ns
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Package dimensions
Seating
Plane
e
b
E
Hd
D
α
c
LA1AA2
pin 1 pin 32
pin 16 pin 17
Pin 1
D
e
E1E2
A1
B
b
A
A2
E
c
32-pin SOJ 300
mil 32-pin SOJ 400
mil
Min Max Min Max
A 0.128 0.145 0.132 0.146
A1 0.025 - 0.025 -
A2 0.095 0.105 0.105 0.115
B 0.026 0.032 0.026 0.032
b 0.016 0.020 0.015 0.020
c 0.007 0.010 0.007 0.013
D 0.820 0.830 0.820 0.830
E 0.255 0.275 0.354 0.378
E1 0.295 0.305 0.395 0.405
E2 0.330 0.340 0.435 0.445
e 0.050 BSC 0.050 BSC
32-pin TSOP 8×20 mm
Min Max
A – 1.20
A1 0.05 0.15
A2 0.95 1.05
b 0.17 0.27
c 0.10 0.21
D 18.30 18.50
e 0.50 nominal
E 7.90 8.10
Hd 19.80 20.20
L 0.50 0.70
α0° 5°
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Note: Add suffix ‘N’ to the above part number for LEAD FREE PARTS (Ex: AS7C1024B-10TCN)
Ordering codes
Package \ Access
time Temp 10 ns 12 ns 15 ns 20 ns
Plastic SOJ, 300 mil commercial AS7C1024B-10TJC AS7C1024B-12TJC AS7C1024B-15TJC AS7C1024B-20TJC
industrial – AS7C1024B-12TJI AS7C1024B-15TJI AS7C1024B-20TJI
Plastic SOJ, 400 mil commercial AS7C1024B-10JC AS7C1024B-12JC AS7C1024B-15JC AS7C1024B-20JC
industrial – AS7C1024B-12JI AS7C1024B-15JI AS7C1024B-20JI
TSOP1 8×20 mm commercial AS7C1024B-10TC AS7C1024B-12TC AS7C1024B-15TC AS7C1024B-20TC
-
sTSOP1
8 x 13.4mm
commercial AS7C1024B-10STC AS7C1024B-12STC AS7C1024B-15STC AS7C1024B-20STC
industrial – AS7C1024B-12STI AS7C1024B-15STI AS7C1024B-20STI
Part numbering system
AS7C 1024B –XX X X X
SRAM
prefix
Device
number
Access
time
Package:T = TSOP1 8×20 mm
ST = sTSOP1 8 x 13.4 mm
J = SOJ 400 mil
TJ = SOJ 300 mil
Temperature range
C = Commercial, 0° C to 70° C
I = Industrial, -40° C to 85° C
N = LEAD FREE
PART
®
AS7C1024B
®
Alliance Memory, Inc.
511 Taylor Way,
San Carlos, CA 94070
Tel: 650-610-6800
Fax: 650-620-9211
www.alliancememory.com
Copyright © Alliance Memory
All Rights Reserved
Part Number: AS7C1024B
Document Version: v. 2.0
© Copyright 2003 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of
Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this
document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data
contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any
time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in
this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide,
any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any
product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or
warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in
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trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in
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claims arising from such use.
