2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5322 Unit 2N5323 V CBO Collector-Base Voltage (I E = 0) -100 -75 V V CEV Collector-Emitter Voltage (V BE = -1.5V) -100 -75 V V CEO Collector-Emitter Voltage (I B = 0) -75 -50 V V EBO Emitter-Base Voltage (I C = 0) -6 -5 V IC I CM IB Collector Current -2 A Base Current -1 A Total Dissipation at T amb = 25 o C P tot Total Dissipation at T c = 25 o C June 1997 A Collector Peak Current P tot T stg , T j -1.2 Storage and Junction Temperature 1 W 10 W -65 to 200 o C 1/4 2N5322/2N5323 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 17.5 175 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit -0.5 -5 A A Collector Cut-off Current (I E = 0) V CB = -80 V V CB = -60 V for 2N5322 for 2N5323 I EBO Collector Cut-off Current (I C = 0) V EB = -5 V V EB = -4 V for 2N5322 for 2N5323 Collector-Emitter Breakdown Voltage (V BE = 1.5V) I C = -100 A for 2N5322 for 2N5323 -100 -75 V V I C = -10 mA for 2N5322 for 2N5323 -75 -50 V V Emitter-Base Breakdown Voltage (I C = 0) I E = -100 A for 2N5322 for 2N5323 -6 -5 V V Collector-Emitter Saturation Voltage I C = -500 mA for 2N5322 for 2N5323 I B = -50 mA Base-Emitter Voltage I C = -500 mA for 2N5322 for 2N5323 V CE = -4 V V (BR)CEV V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO V CE(sat) V BE h FE DC Current Gain for 2N5322 I C = -500 mA I C = -1 A for 2N5323 I C = -500 mA A A -0.1 -0.5 -0.7 -1.2 V V -1.1 -1.4 V V V CE = -4 V V CE = -2 V 30 10 130 V CE = -4 V 40 250 fT Transition Frequency I C = -50 mA V CE = -4 V t on Turn-on Time I C = -500 mA I B1 = -50 mA V CC = -30 V 100 ns t off Turn-off Time I C = -500 mA V CC = -30 V I B1 = -IB2 = -50 mA 1000 ns Pulsed: Pulse duration = 300 s, duty cycle = 1 % 2/4 Min. I CBO f = 10 MHz 50 MHz 2N5322/2N5323 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N5322/2N5323 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4