Vishay Semiconductors
TLDR5800/TLDR6800
Document Number 83004
Rev. 1.6, 19-Sep-07
www.vishay.com
1
High Intensity LED, ∅ 5 mm Clear Package
FEATURES
• Exceptional brightness
(IVtyp = 2500 mcd at IF = 20 mA)
• Narrow viewing angle (ϕ = ± 4°)
• Low forward voltage
• 5 mm (T-1¾") clear package
• Very high intensity even at low drive currents
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
• Lead (Pb)-free device
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
19224
19223
e2
DESCRIPTION
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range of
drive current. It can be DC or pulse driven to achieve
desired light output.
A clear 5 mm package is used to provide an extremely
high light intensity of more than 2000 mcd at a very
narrow viewing angle.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 5 mm
• Product series: standard
• Angle of half intensity: ± 4°
APPLICATIONS
• Bright ambient lighting conditions
• Battery powered equipment
• Indoor and outdoor information displays
• Portable equipment
• Telecommunication indicators
• General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLDR5800/6800 Red, IV ≥ 1000 mcd GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS1) TLDR5800/6800
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage2) VR6V
DC Forward current IF50 mA
Surge forward current tp ≤ 10 µs IFSM 1A
Power dissipation PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
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Document Number 83004
Rev. 1.6, 19-Sep-07
Vishay Semiconductors
TLDR5800/TLDR6800
Note:
1) Tamb = 25 °C, unless otherwise specified
2) Driving the LED in reverse direction is suitable for a short term application
Note:
1) Tamb = 25 °C, unless otherwise specified
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each bag
(there will be no mixing of two groups in each bag).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag.
In order to ensure availability, single wavelength groups will not be orderable.
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 350 K/W
ABSOLUTE MAXIMUM RATINGS1) TLDR5800/6800
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLDR5800/6800, RED
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Luminous intensity IF = 20 mA IV1000 2500 mcd
Dominant wavelength IF = 20 mA λd648 nm
Peak wavelength IF = 20 mA λp650 nm
Angle of half intensity IF = 20 mA ϕ± 4 deg
Forward voltage IF = 20 mA VF1.8 2.2 V
Reverse current VR = 6 V IR10 μA
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
LUMINOUS INTENSITY CLASSIFICATION
GROUP LUMINOUS INTENSITY (MCD)
STANDARD MIN MAX
EE 1000 2000
FF 1350 2700
GG 1800 3600
HH 2400 4800
II 3200 6400
KK 4300 8600
LL 5750 11500
MM 7500 15000
NN 10000 20000
Document Number 83004
Rev. 1.6, 19-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLDR5800/TLDR6800
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Ambient Temperature for AlInGaP
Figure 2. Forward Current vs. Pulse Length
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
0
10
20
30
40
60
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
100
96 11489
50
04020 60 80
0.01 0.1 1 10
1
10
100
1000
10000
100
95 10025
0.02
0.05
0.1
0.2
1
0.5
Tamb85°C
≤
tp/T = 0.01
IF - Forward Current (mA)
tP - Pulse Length (ms)
0.4 0.2 0 0.2 0.4 0.6
95 10022
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Radiant Intensity
Figure 4. Relative Intensity vs. Wavelength
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Relative Luminous Intensity vs. Forward Current
600 620 640 660 680
0
0.2
0.4
0.6
0.8
1.2
700
95 10018
I
V rel
- Relative Luminous Intensity
- Wavelength (nm)
1.0
red
1
10
100
95 10014
1 1.5 2 2.5 3
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
red
100.1 1
0.01
0.1
1
10
100
95 10016
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
red
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Document Number 83004
Rev. 1.6, 19-Sep-07
Vishay Semiconductors
TLDR5800/TLDR6800
PACKAGE DIMENSIONS: TLDR5800
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10262
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
P
/T
I
V rel
- Relative Luminous Intensity
2.0
red
I
FAV
= 10 mA, const.
Figure 8. Rel. Luminous Intensity vs. Ambient Temperature
0
95 10015
20 40 60 80 100
IV rel - Relative Luminous Intensity
Tamb - Ambient Temperature (°C)
0
0.4
0.8
1.2
1.6
2.0
red
95 11476
Document Number 83004
Rev. 1.6, 19-Sep-07
www.vishay.com
5
Vishay Semiconductors
TLDR5800/TLDR6800
PACKAGE DIMENSIONS: TLDR6800
20243
www.vishay.com
6
Document Number 83004
Rev. 1.6, 19-Sep-07
Vishay Semiconductors
TLDR5800/TLDR6800
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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