BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9. BC307, 8, 9 are complementary to BC237, 8, 9. BC320, 1, 2 are complementary to BC317, 8, 9. TO-18 TO-92B TO-92F TO-92A az = CBE ECB CEB ESC BC177,8,9 BC257,8,9 BC307 ,8,9 BC320,1,2 ABSOLUTE MAXIMUM RATINGS TYPE ~VoRO -VcES ~VCEO ~VEBO -Ic(Dc) Pot x Tj, Tstg (v) (v) (v) (v) (mA) (mW) BCL77 50 50 45 5 100 300 BC178 30 30 25 5 100 300 -55 to 175C BC179 25 25 20 5 100 300 BC257 50 50 45 5 100 300 BC258 30 30 25 5 100 300 -55 to 150 BC259 25 25 20 5 100 300 BC307 50 50 45 5 100 300 BC 308 30 30 25 5 100 300 -55 to 150 BC309 25 25 20 5 100 300 BC320 50 _ AS 6 "150 310 BC321 45 30 5 150 310 -55 to 150C BC322 30 20 5 150 310 ower Dissipation @ Ta< 25% * a) oO ct e to 'd MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 Feb-97SLBRTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) PARAMETER SYMBOL r MIN TYP MAX |UNIT| TEST CONDITIONS Collector-Base Breakdown Voltage ~BVCRBO Vv -Ic=10pA Tpr=0 Collector-Emitter Breakdown Voltage -LVckO * |Note 1 -Ic=emA Ip=0 Rmitter-Base Breakdown Voltage -BYRBO ~Ig=lpa Ic=0 Collector Cutoff Current ~Icus BCL77, 178, 179 15 | nA | Vcz=VcES VBE=0 BC257, 258, 259 7 only 4 | pA | Vor=Vces VBE=0 BC307, 308, 309 : Ta=1250C Collector Cutoff Current ~ICBO 30 | nA | -Vep=20V. Ip=0 BC320, 321, 322 only 15 { pA | -VoB=20V Ip-0 Ta=1LO00C Collector-Emitter Saturation Voltage |-VcE(sat)* 0.1 O43 | V -Ic=10mA -IBp=0.5mA All types 0.25 Vv -Ic=100mA -Ip=5mA Collector-Emitter Knee Voltage -VCEK BC177, 178, seg 0.3 0.6 | V ~Ig=l0mA,Ip=value at only : ~ BC307, 308, 309 which -Ic=llmA -Vop=1V Base-Emitter Saturation Voltage -VBE(sat)* 0.72 Vv -Ic=10mA -Ip=O.5mA All types 0.92 V. | -Ic=100mA -Ip=5mA Base-Emitter Voltage All types -VeR * 0.6 0.65 0.75 ~Ic=2mA -VCE=5V BC320, 321, 322 only -VBE * 0.7 0.77 -Ic=10mA -VcH=5V Current Gain-Bandwidth Product fm 180 MHz | -Ic=10mA -VcE=5V Collector-Base Capacitance Cob -Vcp=l0V = Ip=0 BCL77, 178, 179 3.6 _7 | oF f=1MHz BC257, 258, 259 5.4 6 | pF 20307, 308, 309 3.2 6 | pF BC320, 321, 322 3.2 4 | oF Yoise Figure NF -Iq=0.2mA -VCE=5V BC177, 178 2 10 | dB i Rg=2Kn f=1kHz adB | 4f=200Hz BC257, 258 2 10} dB BC307, 308 2 10 | aB BC320, 321 2 6 dB * gmlse Test : Pulse Width=0.43mS, Duty Cycle=1% Note 1 : equal to the value of absolute maximum ratings.~ - - Continued ~ . Lo PARAMETER SYMBOL | MIN TYP MAX |UNIT TEST CONDITIONS Nose Figure NF Irs ~Ie=0.2mA -Vor=5V BC179 1,2 4 | 4B RQ=2Ka f=1kH2 . Af=200Hz 2 30309 only -Ic=0.2mA -VCB=5V BC 322 1 6 2 4 dB Ra=2K a f=30Hz-L5KHz D.C. CURRENT GAIN (HrE) @ -Vog=5V TA=25C ateIc Hre GROUP VI Hrg GROUP A Hrg GROUP B ~ HFE GROUP C (Pulsed)} MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX 0.OlmA 70 110 200 330 2mA 70 110 140 110 170 220 200 300 450 A420 520 800 100mA 60 80 140 240 h - PARAMETERS @ -Ic=2mA -VcB=5V f=lkHz TA=25C HFE GROUP VI| EFE GROUP A | HFE GROUP B | HFE GROUP C -~ ~ PARAMETER SYMBOL | saw TYP MAX | MEN TYP MAX | MIN TYP Max | on typ max | UZ Input Impedance Hie 1.4 2.7 4.5 8.7 Ka Yoltage Feedback Ratio hre 2.5 3% 3.5 4 x10~* Small Signal Current Gain hfe 75 110150 | 125 190 260 | 240 330 500 | 450 580 900 Output Admittance Hoe 20 25 35 60 po TYPICAL CHARACTERISTICS AT TA=250C_ (Pulse Test) D.C. CURRENT GAIN VBE AND VCE(sat) vs COLLECTOR CURRENT vs COLLECTOR CURRENT Hee (-Vv) . i *VcETSV 600 1.2 1.0 VBE at : 400 0.8 @-Vc_E=5V [a | 0.6 | PTT | 200 VCE (sat) ; oe orl. Mim, 0.2 @ Ic=20tg 5 i: = Hy 0 0 | fem tt ty 0.01 0.1 1 10 100 0.1 1 10 100 | -ic (mA) Ic (mA) ae sepaoe ailTYPICAL CHARACTERISTICS (Ta=25C UNLESS OTHERWISE SPECIFIED) aman) amily COMMON EMITTER CURRENT GAIN BANDWIDTH PRODUCT OUTPUT CHARACTERISTICS vs COLLECTOR CURRENT vlc 6pA fT (m (MHz) 1.5 pA 300 PV cE=5V 4pa 1.0 200! ape aT N N Wi N 0.5 100; ; 0 0 0 1 2 3 4 5 0.1 1 10 100 TCE (v) =I (mA) COLLECTOR CUTOFF CURRENT hPARAMETERS (NORMALIZED) vs AMBIENT TEMPERATURE VS COLLECTOR CURRENT 200 10 100 ~lcBo -Vop=SV. f=1KHz _~ (nA) he (N) 10 1.0 1 0.1 0.2 0 40 80 120 160 0.1 1 10 Ta c) =I (mA) COLLECTOR-BASE CAPACITANCE : BROAD BAND NOISE FIGURE vs COLLECTORBASE VOLTAGE vs COLLECTOR CURRENT Cob NF N VcE=5V (pF) \ f=30-15K Hz cS =1MH a TN\ e MHe a SS 4 ho P| T0-18 , 2 NY Rg=1K _| NN I NS T0..99- Ra=2K* fF necsnsl 2 Tr Rg=5KA a pm 1 | RG=10KE 0 0 0 > 4 6 3 10 10 100 nic. ua) 1000 Avrmes LL tod smumenemm