IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IGP50N60T
600 V
50 A
1.5 V
175 C
G50T60
PG-TO220-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj ≥ 25C
VCE
600
V
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
IC
90
64
A
Pulsed collector current, tp limited by Tjmax
ICpuls
150
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
150
Gate-emitter voltage
VGE
20
V
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
tSC
5
s
Power dissipation TC = 25C
Ptot
333
W
Operating junction temperature
Tj
-40...+175
C
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
1
J-STD-020 and JESD-022
2
) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO220-3
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
2
Rev. 2.8 19.05.2015
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
0.45
K/W
Thermal resistance,
junction – ambient
RthJA
62
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=50A
Tj=25C
Tj=175C
-
-
1.5
1.9
2.0
-
Gate-emitter threshold voltage
VGE(th)
IC=0.8mA,VCE=VGE
4.1
4.9
5.7
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
-
-
-
-
40
3500
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=50A
-
31
-
S
Integrated gate resistor
RGint
-
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
VGE=0V,
f=1MHz
-
3140
-
pF
Output capacitance
Coss
-
200
-
Reverse transfer capacitance
Crss
-
93
-
Gate charge
QGate
VCC=480V, IC=50A
VGE=15V
-
310
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
PG-TO-220-3-1
PG-TO-247-3-21
-
-
7
13
-
-
nH
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
VCC = 400V,
Tj 150C
-
458.3
-
A
1
) Allowed number of short circuits: <1000; time between short circuits: >1s.
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
3
Rev. 2.8 19.05.2015
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
td(on)
Tj=25C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L
=103nH,C
=39pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW50N60T
-
26
-
ns
Rise time
tr
-
29
-
Turn-off delay time
td(off)
-
299
-
Fall time
tf
-
29
-
Turn-on energy
Eon
-
1.2
-
mJ
Turn-off energy
Eoff
-
1.4
-
Total switching energy
Ets
-
2.6
-
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
td(on)
Tj=175C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L
=103nH,C
=39pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKW50N60T
-
27
-
ns
Rise time
tr
-
33
-
Turn-off delay time
td(off)
-
341
-
Fall time
tf
-
55
-
Turn-on energy
Eon
-
1.8
-
mJ
Turn-off energy
Eoff
-
1.8
-
Total switching energy
Ets
-
3.6
-
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
4
Rev. 2.8 19.05.2015
IC, COLLECTOR CURRENT
100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
100A
120A
140A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
1A
10A
100A
10µs
1ms
DC
tp=2µs
50µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 7)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
50W
100W
150W
200W
250W
300W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C 150°C
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 175C)
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Ic
Ic
__ Icmax
--- max. current limited by bondwire
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
5
Rev. 2.8 19.05.2015
IC, COLLECTOR CURRENT
0V 1V 2V 3V
0A
20A
40A
60A
80A
100A
120A
15V
7V
9V
11V
13V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V
0A
20A
40A
60A
80A
100A
120A
15V
13V
7V
9V
11V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
20A
40A
60A
80A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
IC=50A
IC=100A
IC=25A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
6
Rev. 2.8 19.05.2015
t, SWITCHING TIMES
0A 20A 40A 60A 80A
10ns
100ns tr
td(on)
tf
td(off)
t, SWITCHING TIMES
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ. max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG=7Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.8mA)
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
7
Rev. 2.8 19.05.2015
E, SWITCHING ENERGY LOSSES
0A 20A 40A 60A 80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 7Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 50A, rG = 7Ω,
Dynamic test circuit in Figure E)
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
8
Rev. 2.8 19.05.2015
VGE, GATE-EMITTER VOLTAGE
0nC 100nC 200nC 300nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V 30V 40V
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=50 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
100A
200A
300A
400A
500A
600A
700A
800A
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
9
Rev. 2.8 19.05.2015
ZthJC, TRANSIENT THERMAL IMPEDANCE
1µs 10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
R,( K/W )
, (s)
0.18355
7.425*10-2
0.12996
8.34*10-3
0.09205
7.235*10-4
0.03736
1.035*10-4
0.00703
4.45*10-5
C1=
1/R1
R1
R2
C2=
2/R2
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
10
Rev. 2.8 19.05.2015
PG-TO220-3
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
11
Rev. 2.8 19.05.2015
Ir r m
90% Ir r m
10% Ir r m
di /dt
F
tr r
IF
i,v
t
QSQF
tStF
VR
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t) 1 2 n
T (t)
j
1
1
2
2n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
IGP50N60T
TRENCHSTOP™ Series
IFAG IPC TD VLS
12
Rev. 2.8 19.05.2015
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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