BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST3906
Document number: BL/SSSTF052 www.galaxycn.com
Rev.A 1
FEATURES
z Power dissipation.(PC=150mW)
z Epitaxial planar die construction.
z Complementary to MMST3904.
z Also available in lead free version.
APPLICATIONS
z General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
MMST3906 K5N SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -200 mA
PC Collector Dissipation 150 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Pb
Lead-free
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST3906
Document number: BL/SSSTF052 www.galaxycn.com
Rev.A 2
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO I
C=-1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO I
E=-10μA,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 μA
DC current gain hFE
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
60
80
100
60
30
300
Collector-emitter saturation voltage VCE(sat)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.25
-0.4 V
Base-emitter saturation voltage VBE(sat)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.65
-0.85
-0.95 V
Transition frequency fT
VCE=-20V,IC= -10mA,
f=100MHz 250 MHz
Collector output capacitance Cobo VCB=-5V,IE=0,f=1MHz 4.5 pF
Collector input capacitance Ciob VCB=-5V,IE=0,f=1MHz 10 pF
Noise figure NF VCE=-5V,IC=-0.1mA,
f=1KHz,Rs=1KΩ 4 dB
Delay time td 35 nS
Rise time tr
VCC=-3V,VBE=-0.5V,
IC=-10mA,IB1=-1mA 35 nS
Storage time ts 225 nS
Fall time tf
VCC=-3V,IC=-10mA,
IB1=IB2=-1mA 75 nS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST3906
Document number: BL/SSSTF052 www.galaxycn.com
Rev.A 3
BL Galaxy Electrical Production specification
PNP Silicon Epitaxial Planar Transistor MMST3906
Document number: BL/SSSTF052 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-323
PACKAGE INFORMATION
Device Package Shipping
MMST3906 SOT-323 3000/Tape&Reel
SOT-323
Dim Min Max
A 1.8 2.2
B 1.15 1.35
C 1.0Typical
D 0.15 0.35
E 0.25 0.40
G 1.2 1.4
H 0.02 0.1
J 0.1Typical
K 2.1 2.3
All Dimensions in mm
