©2005 Fairchild Semiconductor Corporation
1
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
tm
July 2006
H11AA814 Series, H11A617 Series, H11A817 Series
4-Pin Phototransistor Optocouplers
Features
AC input response (H11AA814 only)
Compatible to Pb-free IR reflow soldering
Compact 4-pin dual in-line package
Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
CEO
of 70V guaranteed
Applications
H11AA814 Series
AC line monitor
Unknown polarity DC sensor
Telephone line interface
H11A617 and H11A817 Series
Power supply regulators
Digital logic inputs
Microprocessor inputs
Description
The H11AA814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The H11A617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
PackageSchematics
1
2
4
3EMITTER
COLLECTORANODE
CATHODE
ANODE, CATHODE
CATHODE, ANODE
1
2
4
3EMITTER
COLLECTOR
H11AA814
H11A617 & H11A817
4
1
2
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
*Typical values at T
A
=25°C
Symbol Parameter Device* Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -55 to +150 °C
T
OPR
Operating Temperature All -55 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
P
D
Total Device Power Dissipation (-55°C to 50°C) All 200 mW
EMITTER
I
F
Continuous Forward Current 814 Series
617, 817 Series
±50
50
mA
V
R
Reverse Voltage 617 Series
817 Series
6
6
V
P
D
LED Power Dissipation (25°C ambient)
No derating up to 100°C
All 70 mW
DETECTOR
V
CEO
Collector-Emitter Voltage All 70 V
V
ECO
Emitter-Collector Voltage 814, 817 Series
617 Series
6
7
V
I
C
Continuous Collector Current All 50 mA
P
D
Detector Power Dissipation (25°C ambient)
Derate above 90°C
All 150 mW
2.9 mW/°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 60mA 617 Series 1.35 1.65 V
I
F
= 20mA 817 Series 1.2 1.5
I
F
= ±20mA 814 Series 1.2 1.5
I
R
Reverse Leakage
Current
V
R
= 6.0V 617 Series .001 10 µA
V
R
= 5.0V 817 Series
DETECTOR
BV
CEO
Collector-Emitter
Breakdown Voltage
I
C
= 0.1 mA, I
F
= 0 ALL 70 100 V
BV
ECO
Emitter-Collector
Breakdown Voltage
I
E
= 10 µA, I
F
= 0 814, 817 Series 6 10 V
617 Series 7 10
I
CEO
Collector-Emitter
Dark Current
V
CE
= 10V, I
F
= 0 H11AA814/A, 817 Series,
H11A617C/D
1 100 nA
H11A617A/B 50
3
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Isolation Characteristics
*Typical values at T
A
= 25°C.
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 13.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol DC Characteristic Test Conditions Device Min Typ* Max Unit
CTR Current Transfer
Ratio
I
F
= ±1mA, V
CE
= 5V
(1)
H11AA814 20 300 %
I
F
= ±1mA, V
CE
= 5V
(1)
H11AA814A 50 150 %
(I
F
= 10mA, V
CE
= 5V
(1)
H11A617A 40 80 %
H11A617B 63 125 %
H11A617C 100 200 %
H11A617D 160 320 %
(I
F
= 5mA, V
CE
= 5V
(1)
H11A817 50 600 %
H11A817A 80 160 %
H11A817B 130 260 %
H11A817C 200 400 %
H11A817D 300 600 %
I
F
= 1mA, V
CE
= 5V
(1)
H11A617A 13 %
H11A617B 22 %
H11A617C 34 %
H11A617D 56 %
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 1mA, I
F
= ±20mA
I
C
= 2.5mA, I
F
= 10mA
I
C
= 1mA, I
F
= 20mA
814 series 0.2 V
617 series 0.4
817 series 0.2
AC CHARACTERISTIC
t
r
Rise Time I
C
= 2mA, V
CE
= 2 V, R
L
= 100
(2)
ALL 4 18 µs
t
f
Fall Time I
C
= 2mA, V
CE
= 2 V, R
L
= 100
(2)
ALL 3 18 µs
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage
(note 3)
(f = 60Hz, t = 1 min)
(I
I-O
2µA)
5000 Vac(rms)
R
ISO
Isolation Resistance (V
I-O
= 500 VDC) 5x10
10
10
11
C
ISO
Isolation Capacitance (V
I-O
= 0, f = 1 MHz) 0.6 1.0 pf
4
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves
FORWARD VOLTAGE V
F
(V)
0.5 1.0 1.5 2.0
0.1
1
10
100
-60 -20-40 0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
20 40 60 80 100
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 4 Forward Current vs. Forward Voltage
IF = 20 mA
IC = 1 mA
VCE = 5V
Ta = 25°C
814
617
817
FORWARD CURRENT I
F
(mA)
200
180
160
140
120
100
80
60
40
20
0
12 51020 50
CURRENT TRANSFER RATIO CTR ( %)
Fig. 1 Current Transfer Ratio
vs. Forward Current
AMBIENT TEMPERATURE T
A
(°C)
RELATIVE CURRENT TRANSFER
RATIO (%)
FORWARD CURRENT I
F
(mA)
Fig. 2. Relative Current Transfer Ratio
vs. Ambient Temperature
-60 -40 -20 0 20 40 60 80 100
0
20
40
60
80
100
120
140
160
IF = 1mA
VCE = 5V
H11AA814
H11AA617 & H11AA817
75°C
100°CT
A
=
50°C
-55°C
25°C
0°C
-30°C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Fig. 5 Collector Current vs.
Collector-Emitter Voltage (H11AA814)
Ta = 25°C
I = 30 mA
Pc (Max)
5mA
10mA
1mA
F
20mA
0102030405060708090100
0
10
20
30
40
50
IF = 5mA
VCE = 5V
Ta = 25°C
I
IF = 30mA
Pc(MAX.)
5m A
10 mA
20mA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
30
25
20
15
10
5
0
0123456789
COLLECTOR CURRENT I
C
(mA)
Fig. 6 Collector Current vs. Collector-Emitter Voltage
(H11AA617 and H11AA817)
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Typical Performance Curves
(Continued)
Fig. 7 Collector Dark Current vs Ambient Temperature Fig. 8 Response Time vs. Load Resistance
AMBIENT TEMPERATURE TA (°C)
AMBIENT TEMPERATURE TA (°C)
COLLECTOR DARK CURRENT ICEO (nA)
0.01
0.1
1
10
100
1000
10000
-60 -40 -20 0 20 40 60 80 100
V
CE
= 20V
FREQUENCY f (kHz)
VOLTAGE GAIN AV (dB)
Fig. 9. Frequency Response (H11AA814)
R = 10k
L1k10 0
VCE = 2V
IC =2mA
Ta = 25°C
-20
0.2
-10
0
15 20.5 100010010
RL=10k1k100
V
CE
= 2V
I
C
= 2mA
Ta = 25°C
0
10
20
0.5 1 2 5 10 20 50 100 500
FREQUENCY f (kHz)
VOLTAGE GAIN AV (dB)
Fig. 10. Frequency Response (H11AA617 and H11AA817)
tr
tf
td
ts
V
CE
= 2V
I
C
= 2mA
Ta = 25°C
500
200
100
50
20
10
5
2
1
0.5
0.2
0.05 0.1 0.2 0.5 1 2 5 10
LOAD RESISTANCE RL (kW)
RESPONSE TIME (ms)
Fig. 11. LED Power Dissipation vs. Ambient Temperature
-40 -20 0 20 40 60 80 100 120
LED POWER DISSIPATION PLED (mW)
0
20
40
60
80
100
-55
Fig. 12. Collector Power Dissipation
vs. Ambient Temperature
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120
0
50
100
150
200
-55
COLLECTOR POWER DISSIPATION PC (mW)
6
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Test Circuit
Figure 13. Test Circuit
Test Circuit for Response Time
Test Circuit for Frequency Response
Input R
Output
Input
R
DOutput
L
Vcc
td
tr tf
ts
90%
10%
Output
RDL
R
Vcc
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Package Dimensions
Note:
All dimensions are in inches (millimeters)
Through Hole
Footprint Dimensions
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.024 (0.60)
0.016 (0.40)
0.020 (0.51)
TYP
0.300 (7.62)
typ
0.010 (0.26)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.024 (0.60)
0.004 (0.10)
0.051 (1.30)
0.043 (1.10)
0.110 (2.79)
0.090 (2.29)
0.412 (10.46)
0.388 (9.86)
0.312 (7.92)
0.288 (7.32)
0.049 (1.25)
0.010 (0.26)
0.030 (0.76)
Lead Coplanarity 0.004 (0.10) MAX
1.5
2.54
1.3
9
SEATING PLANE
0.010 (0.26)
0.200 (5.10)
0.161 (4.10)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)
0.110 (2.79)
0.090 (2.29)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.291 (7.40)
0.252 (6.40)
0.110 (2.80)
0.011 (1.80)
0.42 (10.66)
0.38 (9.66)
(Surface Mount)
Surface Mount
0.4” Lead Spacing Footprint Dimensions (Surface Mount)
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Ordering Information
*To specify the new construction version which needs 260°C max reflow peak temperature rating: add “NF098” to the
end of the part number. The non-NF098 version is rated for 260°C peak reflow temperature only for parts marked with
date code 0550 and later.
Marking Information
Part Number Example Description
H11AA814S Surface Mount Lead Bend
H11AA814SD Surface Mount; Tape and reel
H11AA814W 0.4" Lead Spacing
H11AA814300 VDE Approved
H11AA814300W VDE Approved, 0.4" Lead Spacing
H11AA8143S VDE Approved, Surface Mount
H11AA8143SD VDE Approved, Surface Mount, Tape & Reel
1
2
6
4
3
5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
814
XVY
ZZ
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Carrier Tape Specifications
Note:
All dimensions are in millimeters
P2
P1
P01.75±0.1
0.3±0.05
Ø1.55±0.05
F
B0
A0
K0
W
Description Symbol Dimensions in mm (inches)
Tape wide W 16 ± 0.3 (.63)
Pitch of sprocket holes P04 ± 0.1 (.15)
Distance of compartment F
P2
7.5 ± 0.1 (.295)
2 ± 0.1 (.079)
Distance of compartment to compartment P112 ± 0.1 (.472)
Compartment A0 10.45 ± 0.1 (.411)
B0 5.30 ± 0.1 (.209)
K0 4.25 ± 0.1 (.167)
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Lead Free Recommended IR Reflow Condition
Recommended Wave Soldering condition
Profile Feature Pb-Sn solder assembly Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone 183°C
60 ~ 120 sec
217°C
30 ~ 90 sec
Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C
Ramp-down rate 6°C/sec max. 6°C/sec max.
Profile Feature For all solder assembly
Peak temperature (Tp) Max 260°C for 10 sec
Time (sec)
ts (Preheat)
25°C
Temperature (°C)
Tsmin
Tsmax
Tp
Soldering zon
Ramp-down
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H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers
Rev. I20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless
Build it Now™
CoolFET™
CROSSVOLT
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.