Ordering number:ENN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions * High breakdown voltage (VCBO900V). * High-speed switching. * Wide ASO. unit:mm 2010C [2SC3150] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB 3 2.7 1 0.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Conditions Ratings Unit VCBO VCEO 900 V 800 V VEBO IC 7 V 3 A 10 A Collector Current (Pulse) ICP Base Current IB PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg PW300s, Duty Cycle10% 1.5 A 50 W 150 C -55 to +150 C Tc=25C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=800V, IE=0 10 A Emitter Cutoff Current IEBO VEB=5V, IC=0 10 A hFE1 VCE=5V, IC=0.2A hFE2 VCE=5V, IC=1A DC Current Gain 10* 40* 8 Continued on next page. * : The hFE1 of the 2SC3150 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank K L M hFE 10 to 20 15 to 30 20 to 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51304TN (PC)/N1098HA (KT)/5097KI/D064MW/6092KI No.1069-1/4 2SC3150 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Ratings Conditions min Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Collector-to-Emitter Sustain Voltage Unit max VCE=10V, IC=0.2A 15 VCB=10V, f=1MHz 60 MHz pF IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= Collector-to-Emitter Breakdown Voltage typ 2.0 V 1.5 V 900 V 800 V 7 V V(BR)EBO IE=1mA, IC=0 VCEO(sus) IC=3A, L=500H, IB=1A VCEX(sus)1 IC=1A, IB1=0.2A, IB2=-0.2A, L=2mH, clamped 800 V 800 V VCEX(sus)2 IC=0.5A, IB1=0.1A, IB2=-0.1A, L=5mH, clamped 900 Turn-ON Time Storage Time V ton tstg IC=2A, IB1=0.4A, IB2=-0.8A, RL=200, VCC=400V 1.0 s IC=2A, IB1=0.4A, IB2=-0.8A, RL=200, VCC=400V 3.0 s tf IC=2A, IB1=0.4A, IB2=-0.8A, RL=200, VCC=400V 0.7 s Fall Time Switching Time Test Circuit PW=20s D.C.1% IB1 OUTPUT RB INPUT IB2 VR 50 RL 200 + 100F + 470F --5V IC -- VCE 2 From top 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 1 IB=0 0 2 4 6 300mA 200mA 100mA 1 IB=0 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE - V ITR05398 ITR05399 hFE -- IC 100 VCE=5V Pulse 2.8 600mA 500mA 400mA 2 10 IC -- VBE 3.2 A 800m700mA 3 0 8 Collector-to-Emitter Voltage, VCE - V VCE=5V Pulse 7 5 DC Current Gain, hFE 2.4 1.2 --40C 1.6 25C C 2.0 Ta=1 20 Collector Current, IC - A Pulse 20mA 10mA 0 IC -- VCE 4 Pulse Collector Current, IC - A Collector Current, IC - A 400V Ta=120C 3 25C 2 --40C 10 7 5 0.8 3 0.4 2 1.0 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 ITR05400 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 5 ITR05401 No.1069-2/4 2SC3150 VCE(sat) -- IC 100 Base-to-Emitter Saturation Voltage, VBE (sat) - V 3 2 10 5 120 C 3 2 3 2 C Ta =-4 0 5 0.1 3 2 25C Ta=--40C 7 5 120C 3 2 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC - A 3 5 5 2 3 5 7 1.0 IC=3A 3 2 0.01 7 5 5 3 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 Single pulse 3 5 5 7 2 10 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE - V ITR05405 ITR05404 Reverse Bias A S O 2 n 5 0.1 5 tio 2 3 era 0.1 to n 3 3 2 op tf 5 5 DC 7 5 ms 10 1.0 3 ITR05403 s 3 2 1.0 2 2 s 1m Collector Current, IC - A 7 0.1 ICP=10A 5 3 5 Collector Current, IC - A 0 tstg 3 10 5 2 Forward Bias A S O 10 R load IC=5IB1=--2.5IB2 VCC=400V 7 7 0.01 ITR05402 SW Time -- IC 10 Switching Time, SW time - s 5 1.0 C 1.0 IC / IB=5 Pulse 7 25 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 5 VBE(sat) -- IC 10 IC / IB=5 Pulse PC -- Ta 60 7 5 Collector Dissipation, PC - W Collector Current, IC - A 10 3 2 1.0 7 5 3 2 IC=5IB1=--5IB2 --IB2=0.6A(IC>3A) Single pulse 0.1 7 5 2 3 5 7 100 50 40 30 20 10 0 2 3 5 Collector-to-Emitter Voltage, VCE 7 1000 2 - V ITR05406 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 150 160 ITR05407 No.1069-3/4 2SC3150 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. PS No.1069-4/4