IXFK44N50F - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V

VGSS Continuous ± 20 V

VGSM Transient ± 30 V

ID25 TC= 25°C44A

IDM TC= 25°C, Pulse Width Limited by TJM 184 A

IAR TC= 25°C44A

EAR TC= 25°C60mJ

EAS TC= 25°C 2.5 J

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 500 W

TJ- 55 ... +150 °C

TJM 150 °C

Tstg - 55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.

FCMounting Force (TO-247) 20..120/4.5..27 Nm/lb.

Weight TO-264 10 g

TO-247 6 g

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low Intrinsic Rg

High dV/dt, Low trr

Features

zRF Capable MOSFETs

zDouble Metal Process for Low Gate

Resistance

zAvalanche Rated

zLow Package Inductance

zFast Intrinsic Rectifier

Advantages

zSpace Savings

zHigh Power Density

Applications

zDC-DC Converters

zSwitch-Mode and Resonant-Mode

Power Supplies, > 500kHz Switching

zDC Choppers

z13.5 MHz Industrial Applications

zPulse Generation

zLaser Drivers

zRF Amplifiers

IXFK44N50F

IXFX44N50F

VDSS = 500V

ID25 = 44A

RDS(on) ≤≤

≤≤

≤ 120mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 250ns

DS98731C(10/09)

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 500 V

VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V

IGSS VGS = ± 20V, VDS = 0V ± 100 nA

IDSS VDS = VDSS, VGS = 0V 100 μA

TJ = 125°C 2 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 120 mΩ

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

TO-264 (IXFK)

Tab

S

G

D

Tab

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IXFK44N50F

IXFX44N50F

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 22 32 S

Ciss 5500 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 990 pF

Crss 330 pF

td(on) 23 ns

tr 18 ns

td(off) 53 ns

tf 8 ns

Qg(on) 156 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 37 nC

Qgd 90 nC

RthJC 0.26 °C/W

RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 44 A

ISM Repetitive, Pulse Width Limited by TJM 164 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr 250 ns

QRM 1.1 μC

IRM 12.0 A

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IF = 22A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247TM (IXFX) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

TO-264 AA Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

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IXFK44N50F

IXFX44N50F

Fi g . 1. Ou tp ut C har acter isti cs @ TJ = 25ºC

0

5

10

15

20

25

30

35

40

45

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7

V

8

V

6

V

Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ TJ = 25ºC

0

20

40

60

80

100

120

140

0 5 10 15 20 25 30

V

DS

- V o lt s

I

D

- Amperes

V

GS

= 10V

7

V

6

V

9

V

8

V

Fi g . 3. Ou tpu t C har acteri sti cs @ TJ = 125º C

0

5

10

15

20

25

30

35

40

45

0123456789101112

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

5

V

7V

6V

Fig. 4. RDS(on) Normalized to ID = 22A Val u e vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 44A

I

D

= 22A

Fig. 5. RDS(on) Normalized to ID = 22A Valu e vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 102030405060708090100110120130

I

D

- Amp e res

R

DS(on)

- Normali zed

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maximum D r ai n C u r r ent vs.

Case Temper atu re

0

5

10

15

20

25

30

35

40

45

50

-50-250 255075100125150

T

C

- Degrees Centigrade

I

D

- Amperes

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK44N50F

IXFX44N50F

Fi g . 7. I n pu t Admi ttance

0

10

20

30

40

50

60

70

80

90

100

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

GS

- V olt s

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig . 8. Tr ansco nd u ct an ce

0

10

20

30

40

50

60

70

0 102030405060708090100

I

D

- Amp eres

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

20

40

60

80

100

120

140

0.20.30.40.50.60.70.80.91.01.11.2

V

SD

- V olt s

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig . 10. Ga te C h ar g e

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200 220

Q

G

- NanoCoulombs

V

GS

- Vol ts

V

DS

= 250V

I

D

= 22A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- V olt s

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

1,000.0

10 100 1,000

V

DS

- Volt s

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

10ms

1ms

R

DS(on)

Limit

100ms

DC

25µs

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IXFK44N50F

IXFX44N50F

IXYS REF: F_44N50F(8F)10-09-09

Fi g. 13. Maximu m T r ansi en t Ther mal Impedance

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Second s

Z

(th)JC

- ºC / W

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