BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99 1 (10)
Document Number 85038
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D
High power gain
D
SMD-package
13 581
23
1
94 9280
BFS17 Marking: E1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
23
1
9510527
BFS17R Marking: E4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
313 652 13 570
BFS17W Marking: WE1
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99
2 (10) Document Number 85038
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 25 V
Collector-emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2.5 V
Collector current IC25 mA
Total power dissipation Tamb ≤ 60
°
C Ptot 200 mW
Junction temperature Tj150
°
C
Storage temperature range Tstg –55 to +150
°
C
Maximum Thermal Resistance
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
m
m Cu RthJA 450 K/W
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99 3 (10)
Document Number 85038
Electrical DC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 ICES 100
m
A
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10
m
A
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 V
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat 0.75 V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA hFE 20 100 150
VCE = 1 V, IC = 25 mA hFE 20
Electrical AC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz fT1.5 GHz
qy
VCE = 5 V, IC = 14 mA, f = 300 MHz fT2.4 GHz
VCE = 5 V, IC = 25 mA, f = 300 MHz fT2.1 GHz
Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb 0.45 pF
Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.8 pF
Noise figure VCE = 5 V, IC = 2 mA, ZS = 50
W
,
f = 800 MHz F 3.5 dB
Power gain VCE = 5 V, IC = 14 mA, ZS = 50
W
,
f = 200 MHz Gpe 23 dB
VCE = 5 V, IC = 14 mA, ZS = 50
W
,
f = 800 MHz Gpe 11 dB
Linear output voltage – two
tone intermodulation test VCE = 5 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
V1 = V2100 mV
Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz IP323 dBm
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99
4 (10) Document Number 85038
Common Emitter S–Parameters
Z0 = 50
W,
Tamb = 25
_
C, unless otherwise specified
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.89 –30.1 5.92 155.7 0.03 73.7 0.95 –9.2
300 0.67 –77.7 4.35 121.5 0.06 53.5 0.80 –18.5
500 0.52 –110.1 3.12 100.8 0.08 47.4 0.71 –20.3
800 0.42 –141.1 2.13 82.4 0.09 48.7 0.67 –21.6
2 1000 0.40 –155.6 1.77 73.5 0.10 51.3 0.67 –23.9
1200 0.40 –167.6 1.51 66.1 0.11 54.3 0.67 –27.1
1500 0.41 176.3 1.27 56.0 0.13 59.6 0.66 –32.4
1800 0.43 162.8 1.09 48.6 0.15 65.5 0.66 –37.3
2000 0.44 153.6 0.98 45.8 0.18 71.6 0.68 –41.0
100 0.75 –49.0 11.55 142.9 0.02 66.8 0.88 –14.3
300 0.48 –106.9 6.36 106.6 0.05 55.0 0.67 –18.9
500 0.39 –137.3 4.09 90.5 0.06 56.9 0.61 –17.4
800 0.36 –162.5 2.65 76.0 0.08 61.2 0.60 –17.6
5 5 1000 0.35 –173.1 2.16 68.6 0.10 63.2 0.61 –20.1
1200 0.37 178.1 1.84 62.2 0.11 65.2 0.61 –23.4
1500 0.40 165.0 1.51 53.2 0.14 68.1 0.61 –28.9
1800 0.42 153.7 1.28 46.4 0.16 71.8 0.61 –33.7
2000 0.43 146.0 1.16 44.2 0.19 76.1 0.64 –37.5
100 0.58 –70.1 16.31 130.8 0.02 62.7 0.79 –17.5
300 0.39 –129.4 7.28 98.3 0.04 61.2 0.59 –16.5
500 0.36 –154.4 4.52 85.2 0.05 64.9 0.56 –14.2
800 0.36 –174.1 2.88 72.6 0.08 67.6 0.57 –14.8
10 1000 0.36 176.8 2.33 65.9 0.10 68.7 0.58 –17.5
1200 0.38 169.3 1.97 59.8 0.11 70.2 0.59 –21.3
1500 0.41 159.0 1.61 51.7 0.14 72.7 0.59 –26.7
1800 0.44 148.4 1.36 45.4 0.17 75.6 0.60 –31.8
2000 0.46 140.9 1.23 43.0 0.20 79.6 0.62 –35.7
BFS17/BFS17R/BFS17W
Vishay Telefunken
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Rev. 4, 20-Jan-99 5 (10)
Document Number 85038
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.49 –84.8 18.25 124.3 0.01 62.8 0.73 –18.0
300 0.37 –140.9 7.49 94.8 0.03 65.1 0.57 –14.7
500 0.36 –162.3 4.59 82.8 0.05 68.3 0.55 –12.7
800 0.37 –179.6 2.91 71.0 0.08 70.4 0.56 –13.5
15 1000 0.38 173.1 2.34 64.5 0.09 71.4 0.58 –16.5
1200 0.40 166.1 1.98 58.8 0.11 72.8 0.58 –20.4
1500 0.44 155.8 1.61 50.7 0.14 75.2 0.59 –26.2
1800 0.46 145.8 1.36 44.6 0.17 78.2 0.60 –31.4
5
2000 0.48 137.7 1.23 42.4 0.20 81.9 0.62 –35.2
5
100 0.44 –96.6 19.07 120.0 0.01 62.0 0.70 –17.6
300 0.36 –148.7 7.46 92.6 0.03 67.9 0.57 –13.3
500 0.38 –167.0 4.55 81.4 0.05 70.5 0.55 –11.6
800 0.39 177.5 2.87 69.9 0.07 72.3 0.57 –13.2
20 1000 0.40 169.8 2.31 63.5 0.09 73.3 0.58 –16.3
1200 0.42 163.8 1.95 57.9 0.11 74.9 0.59 –20.3
1500 0.46 153.8 1.58 50.1 0.13 77.5 0.59 –26.2
1800 0.49 143.7 1.34 43.9 0.17 80.4 0.60 –31.4
2000 0.49 136.1 1.21 41.9 0.20 83.7 0.62 –35.4
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99
6 (10) Document Number 85038
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
Tamb – Ambient Temperature ( °C )96 12159
P – Total Power Dissipation ( mW )
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
IC – Collector Current ( mA )13603
f – Transition Frequency ( MHz )
T
VCE=5V
f=300MHz
Figure 2. Transition Frequency vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13604
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
BFS17/BFS17R/BFS17W
Vishay Telefunken
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Rev. 4, 20-Jan-99 7 (10)
Document Number 85038
VCE = 5 V, IC = 10 mA , Z0 = 50
W
S11
13 546
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
0.5
1.0
0.1
0.3
Figure 4. Input reflection coefficient
S21
13548
0°
90°
180°
–90°
8 16
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.5
0.1
0.3
Figure 5. Forward transmission coefficient
S12
13 547
0°
90°
180°
–90°
0.08 0.16
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1
1.5
Figure 6. Reverse transmission coefficient
S22
13 549
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁÁ
ÁÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
0.5 0.1
Figure 7. Output reflection coefficient
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99
8 (10) Document Number 85038
Dimensions of BFS17 in mm
95 11346
Dimensions of BFS17R in mm
95 11347
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 4, 20-Jan-99 9 (10)
Document Number 85038
Dimensions of BFS17W in mm
96 12236
BFS17/BFS17R/BFS17W
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99
10 (10) Document Number 85038
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
