2N7002T/R - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

2N7002

N-channel TrenchMOS FET

Rev. 06 — 28 April 2006 Product data sheet

■Logic level threshold compatible ■Very fast switching

■Surface-mounted package ■TrenchMOS technology

■Logic level translator ■High-speed line driver

■VDS ≤60 V ■ID≤300 mA

■RDSon ≤5Ω■Ptot ≤0.83 W

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 gate (G)

SOT23

2 source (S)

3 drain (D)

mbb076

Product data sheet Rev. 06 — 28 April 2006 2 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

3. Ordering information

4. Limiting values

Table 2: Ordering information

Type number Package

Name Description Version

2N7002 TO-236AB plastic surface mounted package; 3 leads SOT23

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C≤Tj≤150 °C - 60 V

VDGR drain-gate voltage (DC) 25 °C≤Tj≤150 °C; RGS =20kΩ-60V

VGS gate-source voltage - ±30 V

VGSM peak gate-source voltage tp≤50 µs; pulsed; duty cycle = 25 % - ±40 V

IDdrain current Tsp =25°C; VGS = 10 V; see Figure 2 and 3- 300 mA

Tsp = 100 °C; VGS = 10 V; see Figure 2 - 190 mA

IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs; see Figure 3 - 1.2 A

Ptot total power dissipation Tsp =25°C; see Figure 1 - 0.83 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

Source-drain diode

ISsource current Tsp =25°C - 300 mA

ISM peak source current Tsp =25°C; pulsed; tp≤10 µs - 1.2 A

Product data sheet Rev. 06 — 28 April 2006 3 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

Fig 1. Normalized total power dissipation as a

function of solder point temperature Fig 2. Normalized continuous drain current as a

function of solder point temperature

Tsp =25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa17

120

0 50 100 150 200

Tsp (°C)

Pder

(%)

03aa25

120

0 50 100 150 200

Tsp (°C)

Ider

(%)

Pder Ptot

Ptot 25 C

()

------------------------ 100 %×=Ider ID

ID25 C

()

---------------------100 %×=

003aab350

-2

-1

1 10 10

(V)

(A)

DC 1 ms

100 µs

Lim it R

DSon

= V

/ I

10 ms

100 ms

10 µs

Product data sheet Rev. 06 — 28 April 2006 4 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

5. Thermal characteristics

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 150 K/W

Rth(j-a) thermal resistance from junction to ambient [1] - - 350 K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

003aab351

-5

-4

-3

-2

-1

1 10

(s)

th(j-sp)

(K/W)

single pulse

0.2

0.1

0.05

δ = 0.5

0.02

tpT

δ =

Product data sheet Rev. 06 — 28 April 2006 5 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

6. Characteristics

Table 5: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=10µA; VGS =0V

Tj=25°C 60--V

Tj=−55 °C 55--V

VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =V

GS; see Figure 9 and 10

Tj=25°C 1 2 2.5 V

Tj= 150 °C 0.6 - - V

Tj=−55 °C - - 2.75 V

IDSS drain leakage current VDS =48V; V

GS =0V

Tj=25°C - 0.01 1 µA

Tj= 150 °C --10µA

IGSS gate leakage current VGS =±15 V; VDS = 0 V - 10 100 nA

RDSon drain-source on-state

resistance VGS = 10 V; ID= 500 mA; see Figure 6 and 8

Tj=25°C - 2.8 5 Ω

Tj= 150 °C - - 9.25 Ω

VGS = 4.5 V; ID= 75 mA; see Figure 6 and 8- 3.8 5.3 Ω

Dynamic characteristics

Ciss input capacitance VGS =0V; V

DS = 10 V; f = 1 MHz;

see Figure 12 - 3150pF

Coss output capacitance - 6.8 30 pF

Crss reverse transfer capacitance - 3.5 10 pF

ton turn-on time VDS =50V; R

L= 250 Ω; VGS =10V;

RG=50Ω; RGS =50Ω- 2.5 10 ns

toff turn-off time - 11 15 ns

Source-drain diode

VSD source-drain voltage IS= 300 mA; VGS = 0 V; see Figure 11 - 0.85 1.5 V

trr reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs; VGS =0V - 30 - ns

Qrrecovered charge - 30 - nC

Product data sheet Rev. 06 — 28 April 2006 6 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

Tj=25°CT

j=25°C

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

Tj=25°C and 150 °C; VDS >I

D×RDSon

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab352

0.2

0.4

0.6

0.8

01234

(V)

(A)

10 5

4.5

3.5V

(V) =

003aab353

2000

4000

6000

8000

10000

0 0.2 0.4 0.6 0.8 1

(A)

DSon

(mΩ)

4.5

(V) =

003aab354

0.2

0.4

0.6

0.8

0246

(V)

(A)

= 150 °C25 °C

03aa28

0.6

1.2

1.8

2.4

-60 0 60 120 180

(°C)

aRDSon

RDSon 25 C

()

------------------------------

Product data sheet Rev. 06 — 28 April 2006 7 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

ID= 0.25 mA; VDS =V

GS Tj=25°C; VDS =5V

Fig 9. Gate-source threshold voltage as a function of

junction temperature Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Tj=25°C and 150 °C; VGS =0V V

GS = 0 V; f = 1 MHz

Fig 11. Source current as a function of source-drain

voltage; typical values Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aab101

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

min

typ

max

003aab100

10-6

10-5

10-4

10-3

0123

VGS (V)

(A)

min typ max

003aab356

0.2

0.4

0.6

0.8

0.2 0.4 0.6 0.8 1

(V)

(A)

= 25 °C

150 °C

003aab357

-1

1 10 10

(V)

(pF) C

iss

rss

oss

Product data sheet Rev. 06 — 28 April 2006 8 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

7. Package outline

Fig 13. Package outline SOT23

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 06 — 28 April 2006 9 of 11

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

8. Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

2N7002_6 20060428 Product data sheet - - 2N7002_5

Modiﬁcations: •Table 5 “Characteristics”: gfs removed

•Table 5 “Characteristics”: Ciss, Coss and Crss values modiﬁed

•Table 5 “Characteristics”: ton and toff typical values modiﬁed

•Figure 3,4,5,6,7,11, and 12: modiﬁed

2N7002_5 20051115 Product data sheet - - 2N7002_4

2N7002_4 20050426 Product data sheet - 9397 750 14915 2N7002-03

2N7002-03 20000727 Product speciﬁcation HZG336 9397 750 07319 2N7002_2

2N7002_2 19970617 Product speciﬁcation - - 2N7002_1

2N7002_1 19901031 Product speciﬁcation - - -

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

Product data sheet Rev. 06 — 28 April 2006 10 of 11

9. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

makes no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

12. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights. Date of release: 28 April 2006

Document number: 2N7002_6

Published in The Netherlands

Philips Semiconductors 2N7002

N-channel TrenchMOS FET

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information . . . . . . . . . . . . . . . . . . . . 10