MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsPMQW DFB LASER DIODES TYPE NAME ML976H11F DESCRIPTION ML9XX11 series are MQW*DFB*" laser diodes emitting light beam around 1550nm. They are well suited for light source in longdistance digital transmission systems. The ML976H11F are hermetically sealed devices having the photodiode for optical output monitoring. * MQW : Multiple Quantum Well * *& DFB: Distributed Feedback ABSOLUTE MAXIMUM RATINGS FEATURES @Low threshold current (typical 10mA) @Stable single transverse mode oscillation @High-side mode suppression ratio: typical 40dB (Tc = 40 to +85C) @High speed pulse response (rise/fall time typical 0.2nsec) @Excellent temperature characteristics APPLICATION Wide temperature range digital transmission system Symbol Parameter Conditions Ratings Unit Po Light output power CW 6 mw VAL Reverse Voltage (Laser diode) _ 2 Vv VAD Reverse Voltage (Photodiode) = 20 Vv IED Forward current (Photodiode) _ 2 mA Tc Case temperature = 40~+85 Cc Tstg Storage temperature = 40~+100 Cc ELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25C) . Limits . Symbol Parameter Test conditions Min. Typ. Max. Unit lth Threshold current CW _ 10 30 mA lor Operating current CW,Po = 5mW _ 30 60 mA Vopr Operating voltage CW,Po = 5mW _ 1.2 1.8 Vv 7 Slope efficiency CW,Po = 5mW 0.15 0.25 _ mW/mA\ AP Peak wavelength CW,Po = 5mW 1530 1550 1570 nm Bit Beam divergence angle (parallel) CW,Po = 5mW = 25 35 deg. O1 Beam divergence angle (perpendicular) | CW,Po = 5mW = 35 45 deg. Im Monitoring output current (Photodiode)| CW,Po = S5mW,Vap = 1V,RL* = 100 0.2 mA tr th Rise and fall time IF = Ith,Po = 5mW,10~90% _ 0.2 0.4 ns SMSR Side mode suppression ratio} CW,Po = 5mW,40~+85C 30 40 = dB * RL: Load resistance of photodiode NOV. ' 97MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP MQW-DFB LASER DIODES $5.63 05 Dimension : mm $4.25 $35540.1 MLO74F 1 1F . ES wv ly Ao PD Ss LD 3 if ay a] (2) a) 2-04) t ML976H11F + 101 S| (4) (3) Case : ls PD S LD - plane fi (2) a) r ML974F11F NOV. 97LASER DIODES MITSUBISHI ML9XX11 SERIES InGaAsPMQW DFB LASER DIODES TYPICAL CHARACTERISTICS 10 20 30 40 50 60 70 80 90 100 1 Q0 ORMTON On - Oo o00 Oo rWMST (yw) doy juesuna Buyeredo (WwW) uy jUeNd ploysaduy| XN 8 Bg - 8 aN g 2 i PSR g SS 2 ao wT N o (MU) Od indjno 4y6rq Case temperature Tc (C) ) Forward current IF (mA Fig.2 Temperature dependence of Ith and lop Light output vs. forward current Fig.1 zc ~~ bab = Foe i--LoLod -4-J.-! ' crrtaraes pti 4 1550 1560 1540 (AIP/EPOL) Ausueju saneley 5mW @Po 90 70 50 30 10 0.4 2 3 (WW/Mul) 2 1 & fousiiye edog 10 0 Case temperature Tc (C) Fig.3 Temperature dependence of slope efficiency E s & ~ 3 g 8 2 2 oD wo co D = Ln N L Qo Ph 5 = _ iw wo il Oo ke Oo oO Oo Oo Oo Oo oO wo t+ N - (ww) yueund puemos (v) Foward voltage Fig.4 Foward current vs. voltage NOV. 97TYPICAL CHARACTERISTICS Relative intensity 1565 1 i Peak wavelenth A(nm) 1540 Fig.6 Temperature dependence of peak wavelength Relative light output 100 90 10 0% 1555 1545 @Po=5mWw 560 550 a 1] 604020 0 20 40 60 80 100 Case temperature Tc (C) 1.0 To =|25C Po =|5mW 0.8 | 0.6 | | 0.4 \ a2 ) NS 0 _/ iS 60 0 60 Angle (deg.) Fig.7-1 Far field pattern 6 // 200ps/div Fig.8 Pulse respose waveform MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsPMQW DFB LASER DIODES qT To =25C Po = 5mW LE EA aL \ 60 0 60 Relative light output Angle (deg.) Fig.7-2 Far field pattern @ 1 / | 7 [ |Z LZ 0 0.2 0.4 Light output Po (mW) w Monitoring output current Im (mA) Fig.9 Light output vs. monitoring output current NOV. ' 97