BSP321P SIPMOS(R) Small-Signal-Transistor Product Summary Features * P-Channel * Enhancement mode VDS -100 V RDS(on),max 900 mW ID -0.98 A * Normal level * Avalanche rated PG-SOT-223 * Pb-free lead plating; RoHS compliant * Qualified according to AEC Q101 * Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSP321P PG-SOT-223 H6327: 1000 pcs/reel BSP321P Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 C -0.98 A T C=70 C -0.79 -3.9 Pulsed drain current I D,pulse T C=25 C Avalanche energy, single pulse E AS I D=-0.98 A, R GS=25 W Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T C=25 C JESD22-A114-HBM mJ 20 V 1.8 W -55 ... 150 C 1A (250V to 500V) 260 C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.05 57 page 1 2012-11-27 BSP321P Parameter Values Symbol Conditions Unit min. typ. max. minimal footprint, steady state - - 115 6 cm2 cooling area1), steady state - - 70 Thermal characteristics Thermal resistance, junction - ambient R thJA Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 A -100 - - Gate threshold voltage V GS(th) V DS=V GS,I D=-380 A -2.1 -3.0 -4 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, T j=25 C - -0.1 -1 V DS=-100 V, V GS=0 V, T j=150 C - -10 -100 V A Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=0.98 A - 689 900 mW Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.79 A 0.6 1.2 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.05 page 2 2012-11-27 BSP321P Parameter Values Symbol Conditions Unit min. typ. max. - 240 319 - 62 82 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-25 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance C rss - 28 42 Turn-on delay time t d(on) - 5.9 8.8 Rise time tr - 4.4 6.6 Turn-off delay time t d(off) - 16.5 24.7 Fall time tf - 8.5 12.7 Gate to source charge Q gs - 1.1 1.4 Gate to drain charge Q gd - 4 6 Gate charge total Qg - 9 12 Gate plateau voltage V plateau - 4.5 - V - - -0.98 A - - -3.9 - 0.84 1.2 V - 47 - ns - 96 - nC V DD=-50 V, V GS=10 V, I D=-0.98 A, R G=6 W ns Gate Charge Characteristics2) V DD=-80 V, I D=0.98 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Q rr T C=25 C V GS=0 V, I F=0.98 A, T j=25 C V R=50 V, I F=|I S|, di F/dt =100 A/s See figure 16 for gate charge parameter definition Rev 1.05 page 3 2012-11-27 BSP321P 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|10 V 2 1 0.8 1.5 -ID [A] Ptot [W] 0.6 1 0.4 0.5 0.2 0 0 0 40 80 120 160 0 40 80 120 160 TA [C] TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 100 s 0.5 0.2 1 ms 100 101 ZthJS [K/W] -ID [A] 0.1 10 ms 0.05 0.02 100 ms 10-1 100 0.01 DC single pulse 10-2 10-1 100 101 102 103 -VDS [V] Rev 1.05 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2012-11-27 BSP321P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 4 2 -10 V -4 V -6 V -4.5 V -7 V -5 V 1.6 2 RDS(on) [W] -ID [A] 3 -5 V 1.2 -6 V -7 V -4.5 V 1 0.8 -8 V -10 V -4 V 0 0.4 0 2 4 6 8 10 0 1 -VDS [V] 2 3 4 3 4 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 4 3 125 C 3 2 gfs [S] -ID [A] 25 C 2 1 1 0 0 0 2 4 6 8 0 -VGS [V] Rev 1.05 1 2 -ID [A] page 5 2012-11-27 BSP321P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.98 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 A 2.5 5 2 min. 1.5 -VGS(th) [V] RDS(on) [W] 4 98 % 1 typ. 3 max. 2 0.5 typ. 1 0 -60 -20 20 60 100 -60 140 -20 20 60 100 140 Tj [C] Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 150 C, typ 100 IF [A] C [pF] Ciss 25 C, typ 102 150 C, 98% Coss 10-1 25 C, 98% Crss 101 10-2 0 20 40 60 80 100 0.5 1 1.5 -VSD [V] -VDS [V] Rev 1.05 0 page 6 2012-11-27 BSP321P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-0.98 A pulsed parameter: T j(start) parameter: V DD 100 12 25 C 50 V 100 C 10 20 V 80 V 125 C -IAV [A] -VGS [V] 8 6 4 2 0 10-1 100 101 102 0 103 2 tAV [s] 4 6 8 10 -Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 A 120 V GS Qg 115 -VBR(DSS) [V] 110 105 V gs(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 Q gate Q gd 140 Tj [C] Rev 1.05 page 7 2012-11-27 BSP321P Package Outline: PG-SOT-223 Footprint: Packaging: Dimensions in mm Rev 1.05 page 8 2012-11-27 BSP321P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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