FQD11P06 / FQU11P06
Rev. A4. May 2001©2001 Fairchild Semiconductor Corporation
Elerical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 2 5 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4 A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit ions Min Typ Max Unit s
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Vo ltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA
VDS = -48 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-3.0 -- -5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -4.7 A -- 0.15 0.185 Ω
gFS Forward Transconductance VDS = -30 V, ID = -4.7 A -- 4.9 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 420 550 pF
Coss Output Capacitance -- 195 250 pF
Crss Reverse Transfer Capacit ance -- 45 60 pF
Switching Characteristics
td(on) Turn-On Delay T ime VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
-- 6.5 25 ns
trTurn-On Rise Time -- 40 90 ns
td(off) Turn-Off De l a y Time -- 15 40 ns
tfTurn -Off Fa ll Time -- 45 100 ns
QgTotal Gate Ch arge VDS = -48 V, ID = -11.4 A,
VGS = -10 V
-- 13 17 nC
Qgs Gate-Source Charge -- 2.0 -- nC
Qgd Gate-Drain Charge -- 6.3 -- nC
Drain-Source Diode Characteristics and Maximum Rati ngs
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, I S = -11.4 A,
dIF / dt = 100 A/µs
-- 83 -- ns
Qrr Reverse Recovery Charge -- 0.26 -- µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)