BSP75G ADVANCE INFORMATION 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V On-State Resistance: 550m Nominal Load Current (VIN = 5V) : 1.4A Clamping Energy: 550mJ Short Circuit Protection with Auto Restart Over Voltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Over-Current Protection Input Protection (ESD) Load Dump Protection (Actively Protects Load) Logic Level Input High Continuous Current Rating Lead-Free Finish; RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (BSP75GQ) Description The BSP75G is a self-protected low-side MOSFET. It features monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. It is intended as a general purpose switch. Applications Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Automotive Rated Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability - the current-limiting protection circuitry is designed to de-activate at low VDS to in order not to compromise Mechanical Data Case: SOT223 (Type DN) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish e3 Weight: 0.112 grams (Approximate) the load current during normal operation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. SOT223 (Type DN) Top View Pin Out Top View Note: The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. Ordering Information (Note 4) Product BSP75GTA BSP75GTC Notes: Marking BSP75G BSP75G Reel Size (inches) 7 13 Tape Width (mm) 12 12 Quantity per Reel 1,000 Units 4,000 Units 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. IntelliFET is a trademark of Diodes Incorporated. BSP75G Document number: DS33015 Rev. 5 - 2 1 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G ADVANCE INFORMATION Marking Information (01 to 53) Functional Block Diagram Over Voltage Protection dV/dt Limitation Human Body ESD Protection Over Temperature Protection Logic Over Current Protection BSP75G Document number: DS33015 Rev. 5 - 2 2 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) ADVANCE INFORMATION Parameter Continuous Drain-Source Voltage Symbol Limit Unit VDS 60 V VDS(SC) 36 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Drain-Source Voltage for Short Circuit Protection VIN = 5V Operating Temperature Range Storage Temperature Range Power Dissipation at TA = +25C (Note 5) Continuous Drain Current @ VIN =10V; TA = +25C (Note 5) Continuous Drain Current @ VIN =5V; TA = +25C (Note 5) Pulsed Drain Current @ VIN = 10V Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy Load Dump Protection Electrostatic Discharge (Human Body Model) DIN Humidity Category, DIN 40 040 IEC Climatic Category, DIN IEC 68-1 TJ -40 to +150 C TSTG -55 to +150 C PD 2.5 W ID 1.6 A ID 1.4 A IDM 5 A IS 3 A IS 5 A EAS 550 mJ VLOAD_DUMP 80 V VESD 4000 V -- -- E 40/150/56 -- -- Thermal Resistance Characteristic Symbol Limit Unit Junction to Ambient (Note 5) RJA 50 C/W Junction to Ambient (Note 6) RJA 24 C/W Junction to Ambient (Note 7) RJA 208 C/W Notes: 5. For a device surface mounted on 37mm x 37mm x 1.6mm FR-4 board with a high coverage of single sided 2oz weight copper. 6. For a device surface mounted on FR-4 board and measured at t<=10s. 7. For a device mounted on FR-4 board with the minimum copper required for electrical connections. BSP75G Document number: DS33015 Rev. 5 - 2 3 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G ADVANCE INFORMATION Typical Characteristics TA = 25C TA = 25C TA = 25C BSP75G Document number: DS33015 Rev. 5 - 2 4 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G ADVANCE INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise stated.) Parameter Static Characteristics Symbol Min. Drain-Source Clamp Voltage Typ. Max. Unit Conditions VDS(AZ) 60 70 75 V ID=10mA Off state Drain Current IDSS -- 0.1 3 A VDS=12V, VIN=0V Off state Drain Current IDSS -- 3 15 A VDS=32V, VIN=0V VIN(TH) 1 2.1 -- V VDS=VGS, ID=1mA Input Current IIN -- 0.7 1.2 mA VIN=5V Input Current IIN -- 1.5 2.7 mA VIN=7V Input Current IIN -- 4 7 mA VIN=10V Static Drain-Source On-State Resistance RDS(ON) -- 520 675 m VIN=5V, ID=0.7A Static Drain-Source On-State Resistance RDS(ON) -- 385 550 m VIN=10V, ID=0.7A Current Limit (Note 9) ID(LIM) 0.7 1.1 1.75 A VIN=5V, VDS>5V Current Limit (Note 9) ID(LIM) 2 3 4 A VIN=10V, VDS>5V Turn-On Time (VIN to 90% ID) tON -- 2.2 -- s RL=22, VIN=0 to 10V, VDD=12V Turn-Off Time (VIN to 90% ID) tOFF -- 13 -- s RL=22, VIN=10V to 0V, VDD=12V Slew Rate On (70 to 50% VDD) -dVDS/dtON -- 10 -- V/s RL=22, VIN=0 to 10V, VDD=12V Slew Rate Off (50 to 70% VDD) Protection Functions (Note 10) Minimum Input Voltage for Over Temperature Protection dVDS/dtON -- 3.2 -- V/s RL=22, VIN=10V to 0V, VDD=12V VPROT 4.5 -- -- V -- Thermal Overload Trip Temperature TJT +150 +175 -- C -- Thermal Hysteresis Unclamped Single Pulse Inductive Energy TJ = +25C Unclamped Single Pulse Inductive Energy TJ = +150C Inverse Diode -- -- +10 -- C -- EAS 550 -- -- mJ ID(ISO)=0.7A, VDD=32V EAS 200 -- -- mJ ID(ISO)=0.7A, VDD=32V VSD -- -- 1 V Input Threshold Voltage (Note 8) Dynamic Characteristics Source Drain Voltage Notes: VIN=0V, -ID=1.4A 8. Protection features may operate outside spec for VIN < 4.5V. 9. The drain current is limited to a reduced value when VDS exceeds a safe level. 10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. BSP75G Document number: DS33015 Rev. 5 - 2 5 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G RDS(ON) VIN(TH) RDS(ON) ADVANCE INFORMATION Characteristics BSP75G Document number: DS33015 Rev. 5 - 2 6 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SOT223 (Type DN) D b2 C E1 E Gauge Plane 0.25 Seating Plane e L b e1 A A1 SOT223 (Type DN) Dim Min Max Typ A -1.70 -A1 0.01 0.15 -A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -c 0.20 0.32 -D 6.30 6.70 -E 6.70 7.30 -E1 3.30 3.70 -e --2.30 e1 --4.60 L 0.85 --All Dimensions in mm A2 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X BSP75G Document number: DS33015 Rev. 5 - 2 C 7 of 8 www.diodes.com June 2018 (c) Diodes Incorporated BSP75G ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com BSP75G Document number: DS33015 Rev. 5 - 2 8 of 8 www.diodes.com June 2018 (c) Diodes Incorporated