BSP75G
Document number: DS33015 Rev. 5 - 2
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BSP75G
ADVANCE INFO R MA T I O N
60V SELF-PROTECTED LOW-SIDE
INTELLIFET MOSFET SWITCH
Product Summary
Continuous Drain Source Voltage: VDS = 60V
On-State Resistance: 550mΩ
Nominal Load Current (VIN = 5V) : 1.4A
Clamping Energy: 550mJ
Description
The BSP75G is a self-protected low-side MOSFET. It features
monolithic over temperature, over current, over voltage (active clamp)
and ESD protected logic level functionality. It is intended as a general
purpose switch.
Applications
Especially Suited for Loads with a High In-Rush Current such as
Lamps and Motors
All Types of Resistive, Inductive and Capacitive Loads in
Switching Applications
μC Compatible Power Switch for 12V and 24V DC Applications
Automotive Rated
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to in order not to compromise
the load current during normal operation. The maximum DC
operating current is therefore determined by the thermal
capability of the package/board combination, rather than by the
protection circuitry.
Features and Benefits
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
Load Dump Protection (Actively Protects Load)
Logic Level Input
High Continuous Current Rating
Lead-Free Finish; RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An Automotive-Compliant Part is Available Under Separate
Datasheet (BSP75GQ)
Mechanical Data
Case: SOT223 (Type DN)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Note: The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for
best thermal performance.
Ordering Information (Note 4)
Marking
Reel Size (inches)
Tape Width (mm)
BSP75G
7
12
BSP75G
13
12
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Top View
SOT223 (Type DN)
Top View
Pin Out
IntelliFET is a trademark of Diodes Incorporated.
e3
BSP75G
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BSP75G
ADVANCE INFO R MA T I O N
Marking Information
Functional Block Diagram
Over Voltage
Protection
Over
Temperature
Protection
Human
Body ESD
Protection
Over Current
Protection
Logic
dV/dt
Limitation
(01 to 53)
BSP75G
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Absolute Maximum Ratings (@TA = +25°C , unless otherwise stated.)
Parameter
Symbol
Limit
Unit
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for Short Circuit Protection VIN = 5V
VDS(SC)
36
V
Continuous Input Voltage
VIN
-0.2 to +10
V
Peak Input Voltage
VIN
-0.2 to +20
V
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Power Dissipation at TA = +25°C (Note 5)
PD
2.5
W
Continuous Drain Current @ VIN =10V; TA = +25°C (Note 5)
ID
1.6
A
Continuous Drain Current @ VIN =5V; TA = +25°C (Note 5)
ID
1.4
A
Pulsed Drain Current @ VIN = 10V
IDM
5
A
Continuous Source Current (Body Diode) (Note 5)
IS
3
A
Pulsed Source Current (Body Diode)
IS
5
A
Unclamped Single Pulse Inductive Energy
EAS
550
mJ
Load Dump Protection
VLOAD_DUMP
80
V
Electrostatic Discharge (Human Body Model)
VESD
4000
V
DIN Humidity Category, DIN 40 040
—
E
—
IEC Climatic Category, DIN IEC 68-1
—
40/150/56
—
Thermal Resistance
Characteristic
Symbol
Limit
Unit
Junction to Ambient (Note 5)
RθJA
50
°C /W
Junction to Ambient (Note 6)
RθJA
24
°C /W
Junction to Ambient (Note 7)
RθJA
208
°C /W
Notes: 5. For a device surface mounted on 37mm x 37mm x 1.6mm FR-4 board with a high coverage of single sided 2oz weight copper.
6. For a device surface mounted on FR-4 board and measured at t<=10s.
7. For a device mounted on FR-4 board with the minimum copper required for electrical connections.
BSP75G
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ADVANCE INFO R MA T I O N
Typical Characteristics
TA = 25°C
TA = 25°C
TA = 25°C
BSP75G
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Electrical Characteristics (@TA = +25°C , unless otherwise stated.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
70
75
V
ID=10mA
Off state Drain Current
IDSS
—
0.1
3
μA
VDS=12V, VIN=0V
Off state Drain Current
IDSS
—
3
15
μA
VDS=32V, VIN=0V
Input Threshold Voltage (Note 8)
VIN(TH)
1
2.1
—
V
VDS=VGS, ID=1mA
Input Current
IIN
—
0.7
1.2
mA
VIN=5V
Input Current
IIN
—
1.5
2.7
mA
VIN=7V
Input Current
IIN
—
4
7
mA
VIN=10V
Static Drain-Source On-State Resistance
RDS(ON)
—
520
675
mΩ
VIN=5V, ID=0.7A
Static Drain-Source On-State Resistance
RDS(ON)
—
385
550
mΩ
VIN=10V, ID=0.7A
Current Limit (Note 9)
ID(LIM)
0.7
1.1
1.75
A
VIN=5V, VDS>5V
Current Limit (Note 9)
ID(LIM)
2
3
4
A
VIN=10V, VDS>5V
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
tON
—
2.2
—
μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Turn-Off Time (VIN to 90% ID)
tOFF
—
13
—
μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Slew Rate On (70 to 50% VDD)
-dVDS/dtON
—
10
—
V/μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Slew Rate Off (50 to 70% VDD)
dVDS/dtON
—
3.2
—
V/μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Protection Functions (Note 10)
Minimum Input Voltage for Over
Temperature Protection
VPROT
4.5
—
—
V
—
Thermal Overload Trip Temperature
TJT
+150
+175
—
°C
—
Thermal Hysteresis
—
—
+10
—
°C
—
Unclamped Single Pulse Inductive Energy
TJ = +25°C
EAS
550
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Unclamped Single Pulse Inductive Energy
TJ = +150°C
EAS
200
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Inverse Diode
Source Drain Voltage
VSD
—
—
1
V
VIN=0V, -ID=1.4A
Notes: 8. Protection features may operate outside spec for VIN < 4.5V.
9. The drain current is limited to a reduced value when VDS exceeds a safe level.
10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered
as ”outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
BSP75G
Document number: DS33015 Rev. 5 - 2
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BSP75G
ADVANCE INFO R MA T I O N
Characteristics
RDS(ON)
RDS(ON)
VIN(TH)
BSP75G
Document number: DS33015 Rev. 5 - 2
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BSP75G
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
SOT223 (Type DN)
Dim
Min
Max
Typ
A
--
1.70
--
A1
0.01
0.15
--
A2
1.50
1.68
1.60
b
0.60
0.80
0.70
b2
2.90
3.10
--
c
0.20
0.32
--
D
6.30
6.70
--
E
6.70
7.30
--
E1
3.30
3.70
--
e
--
--
2.30
e1
--
--
4.60
L
0.85
--
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e1
e
b2
A2
C
E
L
E1
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
BSP75G
Document number: DS33015 Rev. 5 - 2
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BSP75G
ADVANCE INFO R MA T I O N
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