SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,50 TYPE No. UC 1100 aD 402-78" 2N2871 2N1232A MA7811% NS100 NS662 NS 1000 c9082 c9083 RT3 ST6 10000 NS1674 $1352Pt 2N1132B/46 AT392 AT395 AT398 $T8181 TO54A TO64At BC215A $T8229 2CY39 USAF520ES07 oc48ak D29E8 2N5242t * FT4355t FTSO4 it * 2N5844* ST8500 127502 ST8065 $T8509 438m 480mZ 500m 500m 500m 500m 500m 600ms 600m 600m$ 600ms 8.0M 16M8A 40M8A 90M5 90.M (2.3m 100M 2.3m m 100MA8| 2.3m 100MA8| 2.3m 100MA8| 2.3m 100MSA|2.2m 100M$A|2.2m 100M$4|2.2m 150M4|2.3m 150MSA|2.2m . sm 1.5M [3.3m m 50M$A|2.5m om 2.4m : fm BOMA| 4.5m 170M$4|5.0m 200MS [5.0m 200M5 |5.0m 250M8A|2.9m u 5.9m . -4m 25M8A/5.9m 5m 25M8A/5,9m D.A.T.A. hfe 10uZ|200 ta 100 tA 15 TA 20 1.0m 50 1.0m | 50 1.0m | 22 1.0m | 85 10m |155 5.0md | 10 1.0m | 100 100ug| 40 soem 1.5m | 30 60 40 SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER OF {1} MAX COLLECTOR DISSIPATION Cob |STRUCIY200 |E 0 TURE | s/a JAD TO200/D E TO46 JA L2d Li? 500nb 27 6.0 900nb 27 35 40p /PLE |u25 A R43 15psA/PEt /TO98 |B 35p TO105| A * u , p 75u 1.8 15p$ |DPLZ|TO105| A u : p 17u 2.3k 4.5 15ps TO105/ A c 60u4 12k 202 16. 50