GF1A thru GF1M
Document Number 88617
10-Aug-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
®
DO-214BA (GF1)
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
VF1.1 V, 1.2 V
IR5.0 µA
Tj max. 175 °C
Features
• Superectifier structure for high reliability
condition
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Mechanical Data
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Device marking code GA GB GD GG GJ GK GM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 30 A
Operating junction and storage temperature range TJ,TSTG - 65 to + 175 °C
www.vishay.com
2
Document Number 88617
10-Aug-05
GF1A thru GF1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter Test condition Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Maximum instantaneous
forward voltage
at 1.0 A VF 1.1 1.2 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR 5.0
50
µA
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 3.0 µs
Typical junction capacitance at 4.0 V, 1 MHz CJ 15 pF
Parameter Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Typical thermal resistance(1) RθJA
RθJL
80
26
°C/W
Figure 1. Forward Current Derating Curve
0
100 130110 120 140 150 160 175
0.5
1.0
60 Hz Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm)
Copper Pad Areas
Lead Temperature (°C)
Average Forward Rectified Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
15
20
25
10
5
30
1100
10
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
GF1A thru GF1M
Document Number 88617
10-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
10
1
0.1
0.01
0.4 0.6 1.4 1.60.81.0 1.2
Pulse Width = 300µs
1% Duty Cycle
TJ = 25 °C
Instantaneous Forward Voltage (V)
I
F
- Instantaneous Forward Current (A)
0.1
1
10
0.01
200 10040 60 80
TJ = 25 °C
TJ = 100 °C
Percent of Rated Peak Reverse Voltage (%)
IR - Instantaneous Reverse Leakage Current (mA)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
1100
10
30
1
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Reverse Voltage (V)
pF - Junction Capacitance
0.01 100
10
100
0.1
0.1 1 10
1
Mounted on
0.2 x 0.27” (5.0 x 7.0mm)
Copper Pad Areas
t - Pulse Duration (sec.)
Transient Thermal Impedance (°C/W)
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118(3.00)
0.040 (1.02)
0.066 (1.68)
0.098(2.49)
0.108(2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 MAX.
(1.93 MAX.)
0.220
(5.58)REF
0.060 MIN.
(1.52 MIN.)
MountingPad Layout
Cathode Band
0.066 MIN.
(1.68 MIN.)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
