SE pes wee we we we ECHNICAL DATA \ a 2Ng18 NPN Silicon small-Signal Transistor __ designed for ultra-high frequency amplifier applications CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11778 _ MAXIMUM RATINGS a Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vde Collector-Base Voltage VCBO 30 Voc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current Continuous Ic 50 mAdc Total Device Dissipation Pr @ Ta=25'C 200 mw Derate above 25C mw 300 mw @1co228C 71 wie Derate above 25C mw CASE 20-03, STYLE Operating Junction and Ty. Tstg ~65 to 200 C a aaae ae Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25:C unless otherwise noted.) Characteristic | _ Symbot | Min ] Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(") ViBRICEO | 15 _ Vde {ig = 3.0 mAde, Ip = 0) Collector-Base Breakdown Vollage V(BR)CBO 30 aad Vode (ig = 1.0 wAde. IE = Q) Emitter-Base Breakdown Voltage V(BR)EBO 3.0 oa Vde (lg = 10 pAde. Ig = 0) Collector Cutott Current IcBo Wega vac tg 0. Tas 150) - r0 ra : ; pade Emitter Cutoff Current tego -~ 10 nAdc (Veg = 2.5 Ve) | J {1) Pulsed Pulse Width 200 ps. Duty Gycle 2 0% tconunued)2N918JAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic ]___Symbot Min | Max [unit ON CHARACTERISTICS OC Current Gain hee _ (Ic = 500 Adc, VcE = 10 Vdc) uy ~ (Ig = 3.0 mAdc. Vog = 1.0 Vdc) 20 200 (Ig = 10 mAdc, VoE = 10 Vdc} 2 _ lig = 3.0 MAde, VoE = 1.0 Vde, Ta = -55 C) ' ~ Collector-Emitter Saturation Voltage VCE (sat) _ 0.4 Vde (Ig = 10 MAde. Ip = 1.0 mAde) Base-Emitter Saturation Voltage VBE(sat) _ 1.0 Vde (Ig = 10 mAdc. Ip = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo pF (Vop = 10 Vde, Ie = 0. f x 0.1 to 1.0 MHz} - 17 (Vcp = 0 Vdc. Ie = 0. f = 0 1 to 1.0 MHz) a 30 Input Capacitance Cipo _ 20 pF (VBE = 0.5 Vac. Ic = 0, f= 0.1 to 1.0 MHz) Smail-Signal Current Transfer Ratio. Magnitude [Ntel 6.0 18 _ {ig = 4.0 mAdc. Voge = 10 Vde, f = 100 MHz) Noise Figure (See tigure) NF 60 - dB (VCE = 6.0 Vde, Ic = 1 0 mAdc. f = 60 MHz Qs = 7.5 mmhos) OUTPUT CHARACTERISTICS (See Figure 25) (VcR = 12 Vde, Ig = 6.0 mAdc, f = 200 MHz) Adjust Vcc and Vee for specified test conditions. Power Gain Gpa 5 ad dB (Vop = 12 Vde, Ig = 6.0 mAdc. | = 200 MHz) Power Output Po 30 _ mW (Vop = 15 Vdc. Ic = 8 0 mAdc. f > 500 MHz) Efficiency y 25 % (Vop = 15 Vdc, Ic = 8.0 mAdc. f > 500 MHz) Collector-Base Time Constant tbo aa 25 ps (Vop = 10 Vdc, Ic =-4 0 mAdc, f = 79.8 MHz) ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vcg = 10 Vde Py = 200 mW Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current (Vcg = 25 Vdc) logo _ 10 nAdc DC Current Gain (I = 3.0 mAdc. Vce = 1.0 Vde) nee 20 200 _ Oelta from Pre-Burn-in Measured Values Min Max Delta Collector Cutott Current ICBO = +100 % of Initial Value or 45.0 nAdc whichever is grealer Delta DC Current Gain AnFE _ 420 % of Initial Value (1) Putsed Pulse Width 300 2 Duty Cycle 2 0% oo