5
G
D
S
J210
J211
J212
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
MMBFJ210
MMBFJ211
MMBFJ212
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Curre nt 10 mA
TJ ,Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
J210-212 *MMBFJ210-212
PDTotal Device Dissipation
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junction t o Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
SOT-23
Mark: 62V / 62W / 62X
GSDTO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
J210/J211/J212/MMBFJ210/J211/J212, Rev A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, V GS = 0 210
211
212
2.0
7.0
15
15
20
40
mA
mA
mA
Typical Characteristics
Parameter Interactions Common Drain-Source
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = 15 V, VDS = 0 - 100 pA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 1.0 nA 210
211
212
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
V
V
gfs Common Source Forward
Transconductance VDS = 15 V, V GS = 0, f = 1.0 kHz
210
211
212
4000
6000
7000
12,000
12,000
12,000
µmhos
µmhos
µmhos
goss Common Source Output
Conductance VDS = 15 V, V GS = 0, f = 1.0 kHz 200 µmhos
*Pulse Test: Pulse Width ≤ 300 µS
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
5
Transfer Characteristics
Typical Characteristics (continued)
Output Conductance
vs. Drain Current
Leakage Current vs. Voltage Noise Voltage vs. Frequency
Transfer Characteristics
Transconductance vs.
Drain Current
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
Typical Characteristics (continued)
Common Source Characteristics
Input Admittance
Output Admittance Reverse Transadmittance
Capacitance vs. Voltage
os)
Forward Transadmittance
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
5
Common Gate Characteristics
Input Admittance Forward Transadmittance
Output Admittance Reverse Transadmittance
N-Channel RF Amplifier
(continued)
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
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As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
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