mters;s] Data Sheet 30A, 600V Ultrafast Diode The RURP3060 is an ultrafast diode (t,, < 55ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as an energy steering/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09903. RURP3060 January 2000 File Number 2776.4 Features + Ultrafast with Soft Recovery................0- < 55ns * Operating Temperature. ............ 0000 ce eens 175C Reverse Voltage... ke cece eee eens 600V * Avalanche Energy Rated Planar Construction Applications * Switching Power Supply * Power Switching Circuits * General Purpose Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC TO-220AC RURP3060 TO-220AC RURP3060 ANODE NOTE: When ordering, use the entire part number. CATHODE CATHODE Symbol (FLANGE) K A Absolute Maximum Ratings T = 25C, Unless Otherwise Specified RURP3060 UNITS Peak Repetitive Reverse Voltage... 6... ce eee eee e tenet nennas VRRM 600 Vv Working Peak Reverse Voltage ... 0... eer eee teen tenet tenes VRwea 600 Vv DC Blocking Voltage 2.0.0... cee eee cence nen n et nn een ebenee Ver 600 Vv Average Rectified Forward Current (To = 130C)... cect n eee eeteneees IF(AV) 30 A Repetitive Peak Surge Current .. 2... ee ce eee tee e net e eet nnneee leRM 70 A (Square Wave, 20kHz) Nonrepetitive Peak Surge Current... 0... ce ect nett ene eet eeeeeneee lrsu 325 A (Halfwave 1 Phase 60Hz) Maximum Power Dissipation .. 0.1... ett eee eee ene nett en teens Pp 125 Ww Avalanche Energy (See Figures 7 and 8) 2.0... cece ee eee eee et tence neta e eens Eavi 20 md Operating and Storage Temperature... 0.2... cee eee ee eee Tste. Ty -65 to 175 C 1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 2000 Wm 4502271 OLO4LELY 4c]RURP3060 Electrical Specifications 1, = 25C, Unless Otherwise Specified TEST SYMBOL CONDITION MIN TYP MAX UNITS VE Ip = 30A - - 15 Vv Ip = 30A, Tc = 150C - - 1.3 Vv Ir VR = 600V - - 250 HA Vp = 600V, To = 150C - - 1 mA ter Ip = 1A, dig/dt = 100A/us : - 55 ns Ip = 30A, dip/dt = 100A/us - - 60 ns ta If = 30A, dip/dt = 100A/us - 30 - ns ty Ig = 30A, dig/dt = 100A/is - 20 - ns Resc - - 1.2 c DEFINITIONS Vf = Instantaneous forward voltage (pw = 300us, D = 2%). IR = instantaneous reverse current. tr = Reverse recovery time at dir/dt = 100A/us (See Figure 6), summation of tg + tp. ta = Time to reach peak reverse current at di/dt = 100A/s (See Figure 6). tb = Time from peak Ip to projected zero crossing of IR based on a straight line from peak IRj through 25% of IRm (See Figure 6). Rgsc = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 200 4000 100 = < {100 - g i = 410 0 3 Ww g 10 2 4 z c 2 a & 0.1 1 0.01 0 0.5 1 15 2 25 0 100 200 300 400 500 600 Vp, FORWARD VOLTAGE (V) Vp, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 intersil @@ 4302271 OLO4bLES 366RURP3060 Typical Performance Curves (continued) 60 50 try 20 t, RECOVERY TIMES (ns) $ 10 1 10 30 ie, FORWARD CURRENT (A) FIGURE 3. t,,, t, AND t, CURVES vs FORWARD CURRENT Test Circuits and Waveforms Voe AMPLITUDE AND Rg CONTROL di/dt ty anp t2 CONTROL Ip DUT CURRENT SENSE + =| Vpo >! toe FIGURE 5. t,, TEST CIRCUIT Ia4A L=40mH R<0.10 Ea = 12LP (R(aviy/(VRyav) - Yop)! Q4 = IGBT (BVces > DUT Vayavi)) L R CURRENT l SENSE Voo Qy JL of A Ypp ~ DUT 9 FIGURE 7, AVALANCHE ENERGY TEST CIRCUIT 30 SN 25 NY SQ. WAVE de 20 ; \ ; \ IFav), AVERAGE FORWARD CURRENT (A) 0 100 120 140 160 180 Tc, CASE TEMPERATURE (C) FIGURE 4. CURRENT DERATING CURVE FIGURE 6. t,, WAVEFORMS AND DEFINITIONS Vav. FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil ssmiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or spacifications at any time with- out notice. Accordingly, the reader is cautioned fo verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may resutt from its use, No license is granted by implication or otherwise under any patant or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 intersil MH 4302271 OLO4LEL 2T4 mm