cal CORPORATION ogc Quad DMOS Analog Switch Driver FEATURES @ Low Propagation Time .............0.000. 600 psec @ Low On Resistance @ Low Insertion Loss @ Low Capacitance Input (Gate)... 2... cece ees 2.4pF typ. Output .. 0 eee 1.3pF typ. Feedback........ 0... cee cece eee eee 0.3pF typ. Low Crosstalk ......... 00. e eens -107dB @ 4kHz Input Transient Protection APPLICATION @ Analog Switch Driver @ Wide Band Dual Differential Amplifiers $D5200 DESCRIPTION The Calogic $D5200 is a monolithic array of 30V enhancement- mode DMOS FET analog switch drivers. The SD5200 is manu- factured with implanted high-speed, high-voltage and low resistance double-diffused MOS (DMOS) process, and was designed to drive DMOS and other analog switches. The devices are available in 16-pin plastic DIP package and in die form for hybrid applications. Custom devices based on SD5200 can also be ordered. ORDERING INFORMATION Part Package Temperature Range S$05200N Plastic DIP Package -55C to +125 XSD5200 Sorted Chips in Carriers -6SC to +125C Functional Block Diagram eo | Lis, S$ KF 2.0 _IfLss, e074 | Los, so$ 74K | Substrate cD2 Duat In Line Package oC Body [ 2] Gs [3] s, [4] S2[5] Ge[6| NC [7] D2 [8] [16] De 15] NC 14] G, 13] S, 12] Ss 11] Gs 10] NC fs] 0s 2, oO oe -2_ 2 TOP VIEW 9-45$D5200 ealoge ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM PARAMETER SYMBOL MAX. VALUE UNITS PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Drain Current Ip 50 mA Drain-Source Vos 30 v Source-Drain Vsp 0.5 Vv Temperature Range Drain-Body Vo8 30 Vv Operating Ty 55to +85 c Source-Body Vsp 15 Vv Storage Ts 55to +150 C Gate-Source Ves 25 v Power Dissipation Gate-Body Vee 25/- .3 v Package Pp 640 (Note 1) mw Gate-Drain Veo 25 v Each Device Pp 300 (Note 2) mw Continuous Drain Current 4 50 A r B mn NOTES: 1. Linear Derating Factor 10.7mW/C above 25C 2. Linear Derating Factor 5.0mW/*C above 25C ELECTRICAL CHARACTERISTICS (T, = 25C, unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNITS CONDITIONS Drain-Source Breakdown Voltage BVps 30 35 v Ip = 10uA, Ves = Vas =0 Source-Body- Breakdown Voltage BVsp 15 v Ig = 10nA, Vgg =0, Drain Open Gate-Body Leakage Current lags 1.0 pA Voe = 25V, Vop = Vsa=0 Gate-Source Threshold Voltage Vasen) 0.5 1.0 2.0 v Vos = Ves, Ip =1.0nA, Vsp =0 Drain-Source ON Resistance FDston) 50 80 ohms Ves = 5V, Ip=1mA, Vsp=0 30 ohms Vag = 10V, Ip = 1mA, Vga =0 23 ohms Ves = 15V, Ip =1mA, Vgg=0 19 ohms Veg = 20V, Ip = 1mA, Vsp=0 Common-Source Forward Transconductance Qs 10 12 mS Vos = 10V, Ip = 20mA, f = 1KHz, Vsg =0 Gate Node Capacitance Cigs+qd+g- b) 24 3.5 pF f= 1MHz, Vpg = 10V, Ves = Vas = 15V Drain Node Capacitance Cigd + db) 1.3 1.5 pF f= 1MHz, Vps = 10V, Ves = Ves = 15V Source Node Capacitance Cigs + sb) 3.5 40 pF f= 1MHz, Vps = 10V, Ves = Veg = 15V Reverse Transfer Capacitance Cidg) 0.3 0.5 pF f= 1MHz, Vps = 10V, Vas = Ves = 15V Cross Talk Cr - 107 dB SWITCHING CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX, UNITS CONDITONS Turn-on Time tavon) 07 1.0 nsec A, =680 0, Re =51 Rise Time tr 08 1.0 nsec Vpp =5V Turn-off Time tott* 10.0 nsec VGton) =10V ton is dapendent on R, and Cx and does not depend on the device characteristics. Test Circuit Sampling scope t, <350psec To +V oo SCOPE 510 Au Your Vno TO SCOPE a1 Input pulse ty, tp <tnsee RIN = 1Ma Rep. rate = 1MHz CIN = 2 pF Switching Waveform 9-46