DATE CHECKED NAME D R A W N Aug.-06-'04 K. Komatsu CHECKED Aug.-06-'04 O. Ikawa APPROVED Y. Seki K. Yamada http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. SPECIFICATION Device Name : Power Integrated Module Type Name : 7MBR15UF120 Spec. No. : MS6M00793 . n g si e d new or f d n e m m o rec No t Fuji Electric Device Technology Co.,Ltd. a MS6M00793 1/ 16 H04-004-07b Revised Records Date Classification Ind. Applied date Content Issued date Aug.-06-' 04 Enactment a Revision Checked Checked Approved O. Ikawa K. Yamada Y. Seki K. Komatsu O. Ikawa K. Yamada Y. Seki . n g si e d new or f d n e m m o rec t No Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Oct.-05-'04 Revised outline (P3/16) Added the note (P4/16) Revised VCE(sat), VF(P6/16) Revised VF curve (P13/16) Revised warning (P14/16) Drawn a MS6M00793 2/ 16 H04-004-03a H04-004-06b 2. Equivalent circuit or f d n e Module only designed for mounting on PCB with 1.70.3mm thickness o c e r No t Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 7MBR15UF120 Specification 1. Outline Drawing ( Unit : mm ) . n g si e d new mm MS6M00793 a a 3/ 16 H04-004-03a 4. Drilling layout for PCB Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 3. Pin positions with tolerance ( Unit : mm ) . n g si or f d n e e d new m m o rec No t Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product. a a MS6M00793 4/ 16 H04-004-03a 5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Inverter Ic Collector current Icp Collector Power Dissipation Brake 1ms Continuous Pc 1 device VCES Gate-Emitter voltage VGES Ic Continuous o Icp 1ms Collector Power Dissipation Pc Average Output Current Io Surge Current (Non-Repetitive) 2 It (Non-Repetitive) Tc=25oC 24 Tc=80oC 30 Tc=25oC 48 Tc=80oC 15 A 98 W 1200 V 20 V 10 A Tc=80oC o 20 o 20 o 40 Tc=80 C between terminal and baseplate voltage between thermistor and others (*2) A A W 15 A IFSM Tj=150oC,10ms 280 A 2 half sine wave 390 A2s Tstg (*1) Isolation A 77 Tj Storage temperature V 1 device 50Hz/60Hz sine wave It Junction temperature V Tc=80 C Tc=25 C Collector current Units 15 Tc=25 C Converter . n g si e d new Viso AC : 1min. or f d n e Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. 150 o -40~ +125 o C C 2500 V 2500 V 1.31.7 N.m (*2) Terminal T1 and T2 should be connected together. And another terminals m m o rec should be connected together and shorted to baseplate. t No Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 20 Continuous -Ic Collector-Emitter voltage Maximum Ratings 1200 Conditions a MS6M00793 5/ 16 H04-004-03a 6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols Inverter Turn-on time VGE = 0 V, VCE = 1200 V - - 1.00 mA IGES VCE = 0 V, VGE = 20 V - - 200 nA VGE(th) VCE = 4.5 6.5 8.5 V 2.10 2.55 20 V, Ic = Tj= 25C - 15 A Tj= 25C - Tj=125C - 2.40 a 2.85 a - 1000 - 600 V - 0.41 1.2 15 A - 0.28 0.6 Ic = Cies VGE = f= ton Vcc= 15 mA 15 V, Tj=125C VCE(sat) (Terminal) VGE = tr 0 V, VCE = 1 MHz Ic = 10 V s 15 V - 0.03 - RG = 100 - 0.37 1.0 - 0.07 0.30 Forward on voltage VF Tj= 25C - 2.40 2.90 (Terminal) Tj=125C - Tj= 25C - Tj=125C - IF = 15 A saturation voltage trr IF = t - . n g si 350 ns 0 V, VCE = 1200 V - - 1.00 mA IGES VCE = 0 V, VGE = 20 V - - 200 nA VGE(th) VCE = 4.5 e d new 6.5 8.5 V 2.05 2.5 VCE(sat) (Terminal) VGE = m m o rec No 1.85 a 2.35 a - 20 V, Ic = Tj= 25C Cies VGE = f= ton Vcc= tr 10 mA - 15 V, Tj=125C - 10 A Tj= 25C - Tj=125C - or f d n e Turn-on time V VGE = (Chip) Input capacitance 2.80 ICES VCE(sat) Ic = Turn-off time 15 A 1.95 a 2.35 a 2.30 V pF VGE = (Chip) 0 V, VCE = 1 MHz 2.00 2.40 V 2.35 a 2.80 a 800 - 600 V - 0.41 1.2 10 A - 0.28 0.6 Ic = 10 V 2.40 a 2.85 a - pF toff VGE = 15 V - 0.37 1.0 s tf RG = 100 - 0.03 0.30 trr IF = 15 A - - 350 ns Reverse current IRRM VR = 1200 V - - 1.00 mA Forward on voltage VFM IF = - 1.1 - V - 1.2 1.5 - - 1.0 T = 25 C 4750 5000 5250 T =100oC - 495 - 3305 3375 3450 Reverse recovery time 15 A chip terminal Reverse current Resistance B value IRRM R B VR = 1600 V o T = 25/50oC Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. Brake 2.50 tr(i) VF Thermistor Converter 2.05 toff tf This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 2.45 a 2.90 a Turn-off time Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter Units ICES VCE(sat) (Chip) Input capacitance Characteristics min. typ. Max. Conditions mA K a MS6M00793 6/ 16 H04-004-03a 7. Thermal resistance characteristics Items Symbols Thermal resistance (1 device) Characteristics min. typ. Max. Conditions Rth(j-c) Inverter IGBT - - 1.62 Inverter FWD - - 1.73 Brake IGBT - - 1.81 Brake diode - - 2.01 - - 1.40 - 0.50 - Converter Diode Contact Thermal resistance Rth(c-f) with Thermal Compound (*) Units o C/W o C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. 8. Indication on module Serial No. 7MBR15UF120 15A 1200V U. K. Lot. No. This specification is applied to Power Integrated Module named 7MBR15UF120. 10. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . . n g si Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. e d new Avoid excessive external force on the module. or f d n e Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. t No m m o rec 11. Definitions of switching time 0V V GE L trr Irr VCE Ic 90% 10% 10% 0V 0A V CE Ic 90% Vcc RG 90% 0V 10% VCE tr(i) V GE tr Ic tf toff ton 12. Packing and Labeling Display on the packing box Logo of production Type name Lot. No. Products quantitiy in a packing box Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 9. Applicable category a MS6M00793 7/ 16 H04-004-03a Reliability Test Items Test items (Aug.-2001 edition) Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration Environment Tests 4 Shock This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Reference AcceptNumber norms ance EIAJ ED-4701 of sample number Test methods and conditions 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle Pull force Test time Screw torque Test time : : : : 10N 101 sec. 1.3 ~ 1.7 Nm (M4) 101 sec. : (0:1) 5 (0:1) 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 5 (0:1) 5 (0:1) 5 (0:1) method Test Method 403 Reference 1 Condition code B Test Method 404 Condition code D Test code C Low temp. -405 . n g si e d new Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : d n e for High temp. 100 m m o rec t 5 Test Method 402 Test Method 105 Test temp. Dwell time No (0:1) Method High temp. 125 5 5 Thermal Shock 5 Test Method 401 Range of frequency : 0.1 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 3 hr. (1hr./direction) Maximum acceleration : 9800m/s 2 Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. +0 -5 +5 -0 Test Method 307 method Condition code A Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. Test categories a MS6M00793 8/ 16 H04-004-03a Reliability Test Items Test categories Test items Test methods and conditions Endurance Tests 1 High temperature Reverse Bias Test duration 2 High temperature Bias (for gate) : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=1005 deg Tj 150 , Ta=255 : 8500 cycles Test temp. Test duration ON time OFF time Test temp. Number of cycles or f d n e Item Characteristic Electrical Leakage current characteristic o c e r mm Symbol (0:1) Test Method 101 5 (0:1) Test Method 106 5 P<1% . n g si Failure criteria Unit Lower limit Upper limit ICES IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual inspection Peeling Plating and the others t No 5 e d new Failure Criteria - USLx2 USLx2 mA A LSLx0.8 - USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA V V mV - USLx1.2 mV Broken insulation - The visual sample - Note LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Bias Voltage Bias Method 3 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method Visual inspection Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition) a MS6M00793 9/ 16 H04-004-03a Reliability Test Results Test categories Reference norms EIAJ ED-4701 Test items (Aug.-2001 edition) Test Method 401 5 0 5 0 5 0 5 0 Method (Pull test) Test Method 402 2 Mounting Strength method 3 Vibration Test Method 403 Condition code B Test Method 404 4 Shock Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Test Method 103 . n g si 5 0 5 e d 0 5 0 Test Method 101 5 0 2 High temperature Bias Test Method 101 5 0 N3 Intermitted Operating Life Test Method 106 5 0 Test code C Storage 4 Temperature Cycle new Test Method 105 or f d n e Test Method 307 5 Thermal Shock method Condition code A o c e r mm 1 High temperature Reverse Bias o( fort gate ) (Power cycling) ( for IGBT ) Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. Endurance Tests This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Mechanical Tests 1 Terminal Strength Number Number of test of failure sample sample a MS6M00793 10 / 16 H04-004-03a [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o Tj= 125oC(typ.) / chip Tj= 25 C(typ.) / chip 25 25 VGE=20V 15V VGE=20V 15V 12V 12V 20 Collector current : Ic [ A ] Collector current : Ic [ A ] 20 15 10V 10 15 10V 10 5 5 8V 8V 0 0 0 1 2 3 4 5 0 1 5 Tj= 25oC (typ.) / chip 10 Tj=125 oC Collector - Emitter voltage : VCE [ V ] Tj=25 oC 20 Collector current : Ic [ A ] 4 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 25 15 8 . n g si 6 e d new 10 5 0 4 or f d n e Ic=20A 2 10A 5A 0 o c e r 0 1 2 3 4 mm 5 5 10 Collector - Emitter voltage : VCE [ V ] ot 15 20 [ Inverter ] Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Vcc=600V, Ic=15A, Tj= 25oC N 4 100 Cres Coes 1000 25 800 20 600 15 400 10 200 5 0 10 0 5 10 15 20 25 30 http://store.iiic.cc/ 10 20 30 40 50 60 Gate charge : Qg [ nC ] DWG.NO. Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. 0 0 35 Gate - Emitter voltage : VGE [ V ] Cies 1000 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Collector - Emitter voltage : VCE [ V ] 10 3 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip Capacitance : Cies, Coes, Cres [ pF ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Collector - Emitter voltage : VCE [ V ] 2 a MS6M00793 11 / 16 H04-004-03a [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg=100 , Tj= 125oC o Vcc=600V, VGE=+-15V, Rg=100, Tj= 25 C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff ton ton toff tr 100 tf tr 100 tf 10 10 0 5 10 15 20 0 5 10 4 5 1000 ton toff tr 100 Eon 125 Eon 25 4 . n g si 3 e d new tf 10 10 Switching loss : Eon, Eoff, Err [ mJ / pulse ] Switching time : ton, tr, toff, tf [ nsec ] 20 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg=100 Vcc=600V, Ic=15A, VGE=+-15V, Tj= 25 oC d n e o c e r 100 Gate resistance : Rg [ ] ot 8 15 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) 1000 2 Eoff 125 Eoff 25 Err 125 1 for Err 25 0 0 mm 5 10 15 20 25 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area (max) Vcc=600V, Ic=15A, VGE=+-15V, Tj= 125 oC +VGE=15V, -VGE<=15V, Rg=>100, Tj<=125oC N 60 Eon 50 6 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ / pulse ] 4 40 30 20 Eoff 2 10 Err 0 0 100 1000 0 Gate resistance : Rg [] 400 800 1200 1600 Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Collector current : Ic [ A ] 10 a MS6M00793 12 / 16 H04-004-03a a [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg=100 [ Inverter ] Forward current vs. Forward on voltage (typ.) / chip 1000 25 Tj=25 oC Tj=125 oC Forward current : IF [ A ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 20 15 10 5 trr 125 100 trr 25 Irr 125 Irr 25 10 0 0 1 2 3 2 4 4 6 10 12 14 16 18 Forward current : IF [ A ] Forward on voltage : VF [ V ] [ Converter ] Forward current vs. Forward on voltage (typ.) / chip 35 30 Forward current : IF [ A ] Tj=25 oC Tj=125 oC 25 . n g si 20 e d new 15 10 5 0 0 or f d n e m m o rec 0.5 1 1.5 2 2.5 Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance (max.) 10 FWD [Brake] IGBT [Brake] FWD [inverter] IGBT [inverter] CONV.Diode 1 Resistance : R [ ] 100 Thermal resistanse : Rth(j-c) [ oC / W ] 10 1 0.1 0.001 0.01 0.1 1 10 0.1 -50 0 50 100 150 200 o Pulse width : Pw [ sec ] Temperature [ C ] Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 8 a MS6M00793 13 / 16 H04-004-03a [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25oC (typ.) / chip Tj= 125oC (typ.) / chip 20 20 VGE=20V 15V 12V 15 Collector current : Ic [ A ] Collector current : Ic [ A ] 15 10 10V 12V VGE=20V 15V 10 10V 5 5 8V 8V 0 0 0 1 2 3 4 5 0 4 5 Tj= 25oC (typ.) / chip Collector - Emitter voltage : VCE [ V ] 10 15 Collector current : Ic [ A ] 3 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage 20 Tj=125 oC Tj=25 oC 10 8 . n g si 6 e d new 5 0 4 or f d n e 2 Ic=14A 7A 3.5A 0 o c e r 0 1 2 3 4 mm 5 5 Collector - Emitter voltage : VCE [ V ] ot 10 15 [ Brake ] Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Vcc=600V, Ic=10A, Tj= 25 oC N 4 Cies 100 Coes Cres 25 1000 25 800 20 600 15 400 10 200 5 0 10 0 5 10 15 20 25 30 http://store.iiic.cc/ 10 20 30 40 Gate charge : Qg [ nC ] DWG.NO. Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. 0 0 35 Gate - Emitter voltage : VGE [ V ] 1000 20 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Collector - Emitter voltage : VCE [ V ] 10 2 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip Capacitance : Cies, Coes, Cres [ pF ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Collector - Emitter voltage : VCE [ V ] 1 a MS6M00793 14 / 16 H04-004-03a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - When electric power is connected to equipments, rush current will be flown through rectifying diode to charge 2 DC capacitor. Guaranteed value of the rush current is specified as I t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 2 2 I t()I t - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. TjTc(Tc) . n g si e d new a Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product. Mounting Instructions (No. MT5F14628a) or f d n e - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. m m o rec - Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm50um10um t No - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. a MS6M00793 15 / 16 H04-004-03a - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE in the snubber circuit, and then set it near the IGBT in order to bipass high frequency surge currents. IGBT(=) IGBT Cautions - . n g si Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. e d new - or f d n e m m o rec The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - t No The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - Control the surge voltage by adding a protection circuit (=snubber circuit) to the IGBT. Use a film capacitor a MS6M00793 16 / 16 H04-004-03a