D A T E N A M E
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H 0 4 - 0 0 4 - 0 7 b
7MBR15UF120
MS6M00793
MS6M00793
1/1 6
Power Integrated Module
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any w ay wh atsoever fo r the use of any t h ird part y n o r used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
DRAWN
CHECKED
A u g . - 0 6 - ' 0 4 K. Komatsu
O . Ikawa
K. Yamada
Y . S e k i
CHECKED
A u g . - 0 6 - ' 0 4 a
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
2/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
D a t e C l a s s i -
f i c a t i o n I n d . C o n t e n t Applied
date D r a w n C h e c k e d C h e c k e d A p p r o ve d
Enactment I s s u e d
date
Revised Records
H 0 4 - 0 0 4 - 0 6 b
A u g . - 0 6 - ' 0 4 O . Ikawa
K. Yamada
Y . S e k i
O c t . - 0 5 - ' 0 4 R e v i s i o n
a
R
e v i s e d o u t l i n e ( P 3 / 1 6 )
Added the no te ( P4 /16 )
Revised VCE(sat), VF(P6/16)
Re vi s e d V F curve (P13/16)
Revi se d warning (P14 / 16 )
K. K omats u
O . Ikawa
K. Yamada
Y . S e k i
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
3/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
7MBR15UF120 Specification
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
Module only designed for mounting on PCB with 1.7±
0.3mm thickness a
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
4/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
3. Pin positions with tolerance ( Unit : mm )
4. Drilling layout for PCB
P l e a s e refer to m o u n t i n g instructions (Technical R e p . No. :MT5F14628a) w h e n you mount this p r o d u c t .
a
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
5/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
5 . Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
I t e m s Symbols C o n d i t i o n s Maximum
R a t i n g s U n i t s
C o l l e c t o r - E m i t t e r v o l t a g e VCES 1 2 0 0 V
Gat e -Emi t t er vol t age VG E S ±20 V
I c C o n t i n u o u s T c = 8 0 oC 1 5
T c = 2 5 oC 2 4
C o l l e c t o r c u r r e n t I c p 1 m s T c = 8 0 oC 3 0
T c = 2 5 oC 4 8
- I c C o n t i n u o u s T c = 8 0 oC 1 5 A
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 9 8 W
C o l l e c t o r - E m i t t e r v o l t a g e VCES 1 2 0 0 V
Gat e -Emi t t er vol t age VG E S ±20 V
I c C o n t i n u o u s T c = 8 0 oC 1 0 A
T c = 2 5 oC 2 0
C o l l e c t o r c u r r e n t I c p 1 m s T c = 8 0 oC 2 0 A
T c = 2 5 oC 4 0
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 7 7 W
Average Output Current I o 5 0 H z / 6 0 H z
sine wave 1 5 A
Surge Current (Non-Repetitive) I FS M T j = 1 5 0 oC , 1 0 m s 2 8 0 A
I 2t ( N o n - R e p e t i t i v e ) I 2t h a l f s i n e w ave 3 9 0 A2s
J u n c t i o n t e m p e r a t u r e T j 1 5 0 oC
Storage temperature T s t g - 4 0 ~ + 1 2 5 oC
I s o l a t i o n b e t w e e n t e r m i n a l a n d b a s e p l a t e (*1) Viso AC : 1min. 2 5 0 0 V
v o l t a g e b e t w e e n t h e r m i s t o r a n d o t h e r s (*2) 2 5 0 0 V
Mounting Screw Torque M4 1 . 3 ～ 1 . 7 N . m
(*1) A ll t erminal s s houl d be c onnec t ed t oget her when i s ol at i on t es t wi ll be done.
(*2) Term i nal T1 and T2 s houl d be c onnec t ed t oget her. A nd anot her t erminals
should be connected together and shorted to baseplate.
A
A
Inverter
Converter Brake
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
6/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) C h a r a c t e r i s t i c s
I t e m s Symbols C o n d i t i o n s min. typ. Max. Units
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES VGE = 0 V, VCE
=
1200 V - - 1. 00 mA
Gate-Emitter leakage current I G E S VCE
= 0 V, VGE
=
±20 V - - 200 nA
Gate-Emitter
threshold voltage VG E ( t h ) VCE
= 20 V , Ic = 15 mA 4. 5 6. 5 8.5 V
C o l l e c t o r - E m i t t e r VCE(sat) - 2.10 2 . 55
saturation voltage (Term ina l) V G E = 15 V , - 2. 45 a 2. 90 a
VCE(sat) I c = 15 A - 2.05 2 . 50
(Chip) - 2. 40 a 2. 85 a
I n p u t c a p a c i t a n c e C i e s VG E = 0 V, VCE
=
10 V - 1000 - pF
f = 1 MHz
T u r n - o n t i m e ton Vcc= 600 V - 0.41 1.2
tr I c = 15 A - 0.28 0.6
tr
(i) VGE = ±15 V - 0.03 - s
T u r n - o f f t i m e toff R G = 100 - 0.37 1.0
tf - 0.07 0 . 30
Forward on voltage VF - 2.40 2 . 90
(Term ina l) - 1. 95 a 2. 35 a
VF - 2.30 2 . 80
(Chip) - 1. 85 a 2. 35 a
R e ve r s e r e c o ve r y t i m e trr I F = 15 A - - 350 ns
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES VGE = 0 V, VCE
=
1200 V - - 1. 00 mA
Gate-Emitter leakage current I G E S VCE
= 0 V, VGE
=
±20 V - - 200 nA
Gate-Emitter
threshold voltage VG E ( t h ) VCE
= 20 V , Ic = 10 mA 4. 5 6. 5 8.5 V
C o l l e c t o r - E m i t t e r VCE(sat) - 2.05 2.5
saturation voltage (Term ina l) V G E = 15 V , - 2. 40 a 2. 85 a
VCE(sat) Ic = 10 A - 2.00 2. 40
(Chip) - 2. 35 a 2. 80 a
I n p u t c a p a c i t a n c e C i e s VG E = 0 V, VCE
=
10 V - 800 - pF
f = 1 MHz
T u r n - o n t i m e ton Vcc= 600 V - 0.41 1.2
tr I c = 10 A - 0.28 0.6 s
T u r n - o f f t i m e toff VGE = ±15 V - 0.37 1.0
tf R G = 100 - 0.03 0. 30
R e ve r s e r e c o ve r y t i m e trr I F = 15 A - - 350 ns
R e ve r s e c u r r e n t I RRM VR = 1200 V - - 1. 00 mA
Forward on voltage VF M I F = 15 A c hip - 1. 1 - V
terminal - 1. 2 1.5
R e ve r s e c u r r e n t I RRM VR = 1600 V - - 1.0 mA
R e s i s t a n c e R T = 25oC 4750 5000 5250
T =100oC - 495 -
B value B T = 25/50oC 3305 3375 3450 K
Ω
T j = 2 5 ° C
T j = 1 2 5 ° C
V
V
T j = 2 5 ° C
T j = 1 2 5 ° C
T j = 1 2 5 ° C
T j = 2 5 ° C
T j = 1 2 5 ° C
V
I F = 15 A
T j = 2 5 ° C
T j = 2 5 ° C
T j = 1 2 5 ° C
T j = 2 5 ° C
T j = 1 2 5 ° C
Inverter
ConverterThermistor Brake
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
7/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
8. Indication on module
1 1 . D e f i n i t i o n s o f s w i t c h i n g t i m e
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
VCE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
VCE
～
～
～
～
～
～
on
t
r
t
r(i)
t
off
t
f
t
rr
I
rr
t
9 . A p p l i c a b l e c a t e g o r y
T h i s s p e c i f i c a t i o n i s a p p l i e d t o P o w e r I n t e g r a t e d M o d u l e n a m e d 7 M B R 1 5 U F 1 2 0 .
1 0 . S t o r a g e a n d t r a n s p o r t a t i o n n o t e s
・T h e m o d u l e s h o u l d b e s t o r e d a t a s t a n d a r d t e m p e r a t u r e o f 5 t o 3 5 oC and
h um i d i t y o f 4 5 t o 75 % .
・Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・Avoid exposure to corrosive gases and dust.
・Avoid excessive external force on the module.
・Store modules with unprocessed terminals.
・D o n o t d r o p o r o t h e r w i s e s h o c k t h e m o d u l e s w h e n t r a n s p o r t i n g .
12. Packing and Labeling
D i s p l a y o n t h e p a c k i n g b o x
‐
L o go o f p ro du c t i o n
‐
T y p e n a m e
‐
L o t . N o.
‐
Products quantitiy in a packing box
U. K.
□□□□□
7MBR15UF120
Lot.N o .
15 A 1200V
□
□
□
SerialN o .
7. T herm al res is tanc e c ha r ac ter is tic s C h a ra c t e r i s t i c s
I t e m s Symbols C o n d i t i o n s min. typ. Max. Units
I n v e r t e r I G B T - - 1.62
T h e r m a l r e s i s t a n c e I n v e r t e r F W D - - 1.73
(1 device) Rt h ( j - c ) Brake IGBT - - 1.81 oC / W
Brake diode - - 2.01
C o n ve r t e r D i ode - - 1.40
C o n t a c t Th e r m a l r e s i s t a n c e R th ( c - f ) w i t h Th e rm a l Co m po u n d (*) - 0 . 5 0 - oC / W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
8/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
Rel i abi lity Test Items
Test
cate-
go r ie s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
anc e
num b e r
1 Terminal Strength Pull force : 10N T e s t M e t h o d 4 0 1 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. MethodⅠ
2 Mounting Strength Screw torque : 1.3 ~ 1.7 N･
m (M4) T e s t M e t h o d 4 0 2 5 ( 0 : 1 )
Test time : 10±1 sec. methodⅡ
3 Vibration Range of frequency : 0.1 ~ 500Hz T e s t M e t h o d 4 0 3 5 ( 0 : 1 )
Sweeping time : 15 min. Referenc e 1
A c c e l e r a t i o n :
100m/s
2 Condition c ode B
Sweeping direction : Each X,Y,Z axis
Test time : 3 hr. (1hr./direction)
4 Shock M a x i m u m a c c e l e r a t i o n :
9800m/s
2 T e s t M e t h o d 4 0 4 5 ( 0 : 1 )
Pulse width : 0.5msec. Condition c ode D
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃T e s t M e t h o d 2 0 1 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃T e s t M e t h o d 2 0 2 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 ℃T e s t M e t h o d 1 0 3 5 ( 0 : 1 )
H u m i d i t y Relative humidity : 85±5% T e s t c o d e C
Storage Test duration : 1000hr.
4 Temperature T e s t M e t h o d 1 0 5 5 ( 0 : 1 )
Cycle Test temp. : Lo w t em p . -4 0±5 ℃
H i g h t e m p . 1 2 5 ±5 ℃
RT 5 ~ 35 ℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
N u m b e r o f c y c l e s : 100 cycles
5 Thermal Shock +0 T e s t M e t h o d 3 0 7 5 ( 0 : 1 )
Test temp. : H i g h t e m p . 1 0 0
-5
℃method Ⅰ
+ 5 Condition c ode A
Low temp. 0
-0
℃
U s e d l i q u i d : W a t e r w i t h i c e a n d b o i l i n g w a t e r
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
N u m b e r o f c y c l e s : 10 cycles
Mechanical TestsEnvironmentTests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
9/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others LSL : Lower specified limit.
USL : Upper specified limit.
Note : EEEaaaccchhh pppaaarrraaammmeeettteeerrr mmmeeeaaasssuuurrreeemmmeeennnttt rrreeeaaaddd---ooouuutttsss ssshhhaaallllll bbbeee mmmaaadddeee aaafffttteeerrr ssstttaaabbbiiillliiizzziiinnnggg ttthhheee cccooommmpppooonnneeennntttsss
aaattt rrroooooommm aaammmbbbiiieeennnttt fffooorrr 222 hhhooouuurrrsss mmmiiinnniiimmmuuummm,,, 222444 hhhooouuurrrsss mmmaaaxxxiiimmmuuummm aaafffttteeerrr rrreeemmmooovvvaaalll fffrrrooommm ttthhheee ttteeessstttsss...
AAAnnnddd iiinnn cccaaassseee ooofff ttthhheee wwweeettttttiiinnnggg ttteeessstttsss,,, fffooorrr eeexxxaaammmpppllleee,,, mmmoooiiissstttuuurrreee rrreeesssiiissstttaaannnccceee ttteeessstttsss,,, eeeaaaccchhh cccooommmpppooonnneeennnttt
ssshhhaaallllll bbbeee mmmaaadddeee wwwiiipppeee ooorrr dddrrryyy cccooommmpppllleeettteeelllyyy bbbeeefffooorrreee ttthhheee mmmeeeaaasssuuurrreeemmmeeennnttt...
Reliability Test Items
Test
cate-
gories Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sam ple
A c c e p t -
ance
num ber
1 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Reverse Bias Test t e mp. : Ta = 125±5 ℃
(Tj ≦
150 ℃)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
V G E = 0 V
Test du rat i o n : 1000hr.
2 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125±5 ℃
(Tj ≦
150 ℃)
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
V C E = 0 V
Test du rat i o n : 1000hr.
3 Intermitted ON time : 2 sec. T e s t M e t h o d 1 0 6 5 P<1%
Operating Life OFF time : 18 sec.
(Power cycle) Test te mp. : Tj=100 ± 5 d eg
( for IGBT ) Tj ≦
150 ℃, Ta=25±5 ℃
N u m b e r o f c y c l e s : 8500 cycles
EnduranceTests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
10/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
R e l ia b i l i t y T e s t R e s u l t s
Test
cate-
g o r i e s T e s t i t e m s
Reference
n o r m s
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
o f t e s t
sample
N u m b e r
o f f a i l u r e
sample
1 Terminal Strength T e s t M e t h o d 4 0 1 5 0
(Pull test) MethodⅠ
2 Mounting Strength T e s t M e t h o d 4 0 2 5 0
methodⅡ
3 Vibration T e s t M e t h o d 4 0 3 5 0
C o n d i t i o n c o d e B
4 Shock T e s t M e t h o d 4 0 4 5 0
C o n d i t i o n c o d e B
1 High Temperature Storage T e s t M e t h o d 2 0 1 5 0
2 Low Temperature Storage T e s t M e t h o d 2 0 2 5 0
3 Temperature Humidity T e s t M e t h o d 1 0 3 5 0
Storage T e s t c o d e C
4 Temperature Cycle T e s t M e t h o d 1 0 5 5 0
5 Thermal Shock T e s t M e t h o d 3 0 7 5 0
method Ⅰ
C o n d i t i o n c o d e A
1 High temperature Reverse Bias T e s t M e t h o d 1 0 1 5 0
2 High temperature Bias T e s t M e t h o d 1 0 1 5 0
( for gate )
3 Intermitted Operating Life T e s t M e t h o d 1 0 6 5 0
(Power cycling)
( for IGBT )
Mechanical Tests
EnvironmentTests
EnduranceTests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
11/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
0
5
10
15
20
25
012345
[ Inverter ]
Col l ec tor cu r r en t vs. C o ll ec t or - E m i t ter vol tag e
T j = 2 5oC(typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
V G E = 2 0 V 1 5 V 12V
10 V
8 V
0
5
10
15
20
25
0 1 2 3 4 5
[ Inverter ]
Collector current vs. Collector-Emitter voltage
T j = 1 2 5 oC ( t y p . ) / c h i p
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
VGE=20V 1 5 V 1 2 V
1 0 V
8 V
0
5
10
15
20
25
012345
[ Inverter ]
Col l ec tor cu r r en t vs. C o ll ec t or - E m i t ter vol tag e
VG E =1 5 V ( ty p . ) / c h ip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 1 2 5 oCT j = 2 5 oC
0
2
4
6
8
10
510 1 5 2 0 25
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [ V ]
Gate - Emitter vol tage : VGE [ V ]
5 A
10A
I c = 2 0 A
0
200
400
600
800
10 00
0
5
10
15
20
25
010 20 3 0 40 50 60
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Ga te c h ar g e : Q g [ n C ]
10
1 0 0
1000
1 0 4
0 5 10 1 5 20 2 5 3 0 35
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Cies
Cres
Coes
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
12/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
10
1 0 0
1000
0 5 1 0 1 5 20
[ Inverter ]
Switching time vs. Collector current (typ.)
V c c = 6 0 0 V , V G E = + - 1 5 V , R g = 1 0 0 , Tj= 25oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
ton
tf
toff
tr
10
1 0 0
1000
0 5 1 0 1 5 20
[ Inverter ]
Switching t ime vs. Collector current (typ.)
Vc c = 6 0 0 V, VG E = + - 1 5V, R g = 1 0 0 , Tj= 125oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
ton
tf
toff
tr
10
1 0 0
1000
1 0 4
1 0 1 0 0 1 0 0 0
[ Inverter ]
Switching t ime vs. G ate resistance (typ.)
Vc c = 6 0 0 V, Ic = 1 5 A, V G E = + - 1 5 V , T j = 25 oC
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg []
t o n
tf
tr
toff
0
1
2
3
4
5
0 5 1 0 15 20 25
[ Inverter ]
Switching loss vs. Coll ector current (t yp.)
V c c = 6 0 0 V , V G E = + - 1 5 V , R g = 1 0 0
Sw it c hi n g los s : Eon, Eof f , Err [ mJ / pu ls e ]
C o l l e c t o r c u r r e n t : I c [ A ]
Eon 125℃
Eon 25℃
Eoff 1 2 5 ℃
Eoff 2 5 ℃
Err 125℃
Err 25℃
0
2
4
6
8
100 1 0 0 0
[ Inverter ]
Switching loss vs. G ate resistance (typ .)
V c c = 6 0 0 V , I c = 1 5 A , V G E = + - 1 5 V , T j = 1 2 5 oC
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
Gate resist an ce : R g [ ]
E o n
Err
E o f f
0
10
20
30
40
50
60
0400 8 0 0 1200 1 6 0 0
[ Inverter ]
Reverse bias safe operating area (max)
+VGE=15V, -VGE<=15V, Rg=>100 , Tj<=125oC
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
13/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
10
1 0 0
1000
2 4 6 8 1 0 1 2 1 4 16 18
[ Inverter ]
R e v e r s e r e c o v e r y c h a r a c t e r i s t i c s ( t y p . )
V c c = 6 0 0 V , V G E = + - 1 5 V , R g = 1 0 0
R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]
R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]
Forward cu rr ent : IF [ A ]
t r r 1 2 5 ℃
I r r 1 2 5 ℃
I r r 2 5 ℃
t r r 2 5 ℃
0
5
10
15
20
25
30
35
00 . 5 11 . 5 22.5
[ Converter ]
Forward cu rrent vs. Forwar d on volt age (t yp .) / c hip
Forwardcurrent : IF [A]
Forward on voltage : VFM [ V ]
T j = 2 5 oCTj=125 oC
0 . 1
1
10
0 . 0 0 1 0 . 0 1 0 . 1 110
T r a n s i e n t t h e r m a l r e s i s t a n c e ( m a x . )
Thermal resistanse : Rth(j-c) [ o
C / W ]
Pulse width : Pw [ sec ]
FWD [inverter]
IGBT [inverter]
CONV.Diode
FWD [Brake]
IGBT [Brake]
0 . 1
1
10
1 0 0
-50 05 0 1 0 0 1 5 0 200
[ Thermistor ]
Temperature characteri stic (typ.)
Resistance : R [ ]
Temperatur e [ oC ]
0
5
10
15
20
25
0 1 2 3 4
[ Inverter ]
F o r w a r d c u r r e n t v s . F o r w a r d on vo l t a g e ( t y p . ) / c h i p
Forward current : IF [ A ]
F o r w a r d o n v o l t a g e : V F [ V ]
Tj=125 oCTj=25 oC
a
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
14/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
0
5
10
15
20
012345
[ Brake ]
Collector current vs. Collector-Emitter voltage
T j = 2 5 oC (typ.) / chip
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
8V
1 0 V
12V15VV G E= 2 0 V
0
5
10
15
20
0 1 2 3 4 5
[ Brake ]
Collector current vs. Collector-Emitter voltage
T j = 1 2 5 oC (typ.) / chip
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
8V
10 V
12V
15 VVGE=20V
0
5
10
15
20
012345
[ Brake ]
Col l ec tor cu r r en t vs. C o ll ec t or - E m i t ter vol tag e
VG E =1 5 V ( ty p . ) / c h ip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 1 2 5 oC
Tj=25o C
0
2
4
6
8
10
510 1 5 2 0 25
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [ V ]
Gate - Emitter vol tage : VGE [ V ]
3.5A
7 A
Ic=14A
0
200
400
600
800
10 00
0
5
10
15
20
25
010 20 3 0 40
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=10A, Tj= 25oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Ga te c h ar g e : Q g [ n C ]
10
1 0 0
1000
1 0 4
0 5 10 1 5 20 2 5 3 0 35
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Cies
Cres
Coes
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
15/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
Warnings
-This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
-Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
-Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
-When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
DC capacitor. Guaranteed value of the rush current is specified as I
2
t (non-repetitive), however frequent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.
電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は
I
2
t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI
2
t破壊とは別に整流用ダイオードの繰返し負荷に
よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値
を抑えるなど、製品寿命に十分留意してご使用下さい。
-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulf urous acid gas) , the pr oduc t's per f orm a nce and appea rance can not b e e nsu red easi l y.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
-Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product.
In application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
パワーサイクル耐量にはΔTjによる場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による
熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、
製品寿命に十分留意してご使用下さい。
‐Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
本製品の実装にあたってはMounting Instructions (技術資料No. MT5F14628a) を参照してください。
-Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。端子の変形により、接触不良などを引き起こす場合があります。
-Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を100mmで50um以下、表面の粗さは10um以下にして下さい。 過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
-In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
speci f i cat i on. T hi s pr oduc t m ay be brok en if t he l oc us is out of the RBSO A.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
a
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00793
16/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
a
Cautions
-Fuji Electric Device Technology is constantly making ev ery endeav or to improv e the product quality and reliability.
H o w e ve r , s e m i c o n d u c t o r p r o d u c t s m a y r a r e l y h ap p e n t o f a i l o r m a l f u n c t i o n . T o p r e ve n t a c c i d e n t s c a u s i n g i n j u r y o r
d e a t h , da m a g e t o pr o p er t y l i k e by fi r e , a n d o t h e r s o c i a l d am ag e r e s u l t ed fr o m a fa i l u r e o r m a l fu n c t i o n o f
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
d e s i g n , s p r e a d - f i re - p r e ve n t i ve de s i g n , a n d m a l f u n c t i o n - p r o t ec t i ve d e s i g n .
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
-T h e a p p l i c a t i o n e x a m p l e s d e s c r i b e d i n t h i s s p e c i f i c a t i o n o n l y e x p l a i n t y p i c a l o n e s t h a t u s e d t h e F u j i E l e c t r i c D e v i c e
T e c h n o l o g y p r o d u c t s . T h i s s p e c i f i c a t i o n n e v e r e n s u r e t o e n f o r c e t h e i n d u s t r i a l p r o p e r t y a n d o t h e r r i g h t s , n o r l i c e n s e t h e
e n f o r c e m e n t ri g h t s .
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
-T h e p r o d u c t d e s c r i b e d i n t h i s s p e c i f i c a t i o n i s n o t d e s i g n e d n o r m a d e f o r b e i n g a p p l i e d t o t h e e q u i p m e n t o r
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
a t o m i c c o n t ro l s y s t em s a n d s u b m a r i n e r e l a y i n g eq u i p m en t o r s y s t e m s , p l ea s e a p p l y a f t e r c o n f i r m a t i o n
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
I f t h e r e i s a n y u n c l e a r m a t t e r i n t h i s s p e c i f i c a t i o n , p l e a s e c o n t a c t F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
-I f e x c e s s i ve s t a t i c e l e c t r i c i t y i s a p p l i e d t o t h e c o n t r o l t e r m i n a l s , t h e d e vi c e s m a y b e b r o k e n . I m p l e m e n t s o m e
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
-Ne ve r a d d t h e ex c e s s i ve m e c h a n ic a l s t r e s s t o t h e m a i n or c o n t ro l t er m i na l s wh e n t h e p ro d uc t i s a p p l i e d t o
equipments . The module st ruc ture may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。
-I n c a s e o f i n s u f f i c i e n t - V G E , e r r o n e o u s t u r n - o n o f I G B T m a y o c c u r . - V G E s h a l l b e s e t e n o u g h va l u e t o p r e v e n t
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。 （推奨値:-VGE=-15V)
-I n c a s e o f h i g h e r t u r n - o n d v/ d t o f I G B T , e r r o n e o u s t u r n - o n o f o p p o s i t e a r m I G B T m a y o c c u r . U s e t h i s p r o d u c t i n
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン d v / d t が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE,R G 等 ） で ご 使用 下 さい。
-T h i s p r o d u c t m a y b e b r o k e n b y a v a l a n c h e i n c a s e o f V C E b e y o n d m a x i m u m r a t i n g V C E S i s a p p l i e d b e t w e e n
C- E t e rm i n a l s . U s e t h i s p r o d u c t w i t h i n i t s a b s ol ut e m a x i m u m vo l t a g e .
V C E S を超 え た 電 圧 が 印 加 さ れ た 場 合 、 ア バ ラ ンシ ェ を起 こし て 素 子 破 壊 する 場 合 が あり ま す 。 V C E は 必 ず絶 対 定 格 の 範 囲 内
でご使用下さい。
-Control t h e surge v o l ta g e b y ad di n g ap r o t e c t i o n circuit(=snubbercircuit)to th e IGBT. Use afilmcapacitor
in th e snubber circuit,a n d th e n set it neart h e IGBT in ordert o b i p a s s highfrequency surge currents.
IGBTに保護回路(= ス ナバ回路)を付けてサージ電圧を吸収させて ください。 ス ナバ回路のコンデンサにはフィルムコンデンサ
を 用 い 、 I G B T の 近 く に 配 置 し て 高 周 波 サ ー ジ 電 圧 を 吸 収 す る 手 段 を 講 じ て く だ さ い 。
保守廃止予定機種
Not recommend for new design.
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