== Wl SEME IRFY140C MECHANICAL DATA Dimensions in mm (inches) NCHANNEL seswion POWER MOSFET roar aan os. | FOR HI-REL f | APPLICATIONS ec ag se 38 Voss 100V Vv T No 1 2 | 1 ID(cont) 1 SA fi} | | Rpsvon) 0.0920 =| | | | | 88 i} fil |i ee iif fi} | | se | |! | | FEATURES + i - outwos,, HERMETICALLY SEALED TO-257AA as a (oa) METAL PACKAGE _e _e - SIMPLE DRIVE REQUIREMENTS TO-257AA Metal Package Pad 1 Gate Pad 2 Drain Pad 3 Source - SCREE * ALL LE LIGHTWEIGHT NING OPTIONS AVAILABLE ADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (T,,5. = 25C unless otherwise stated) +20V Ves Gate Source Voltage Ip Continuous Drain Current @ Tease = 25C 15A Ip Continuous Drain Current @ Tease = 100C 10A lom Pulsed Drain Current 60A Pp Power Dissipation @ Toase = 25C SOW Linear Derating Factor 0.48W/C Ty, Tstg Operating and Storage Temperature Range 55 to 150C ReJc Thermal Resistance Junction to Case 2.1C/W max. Roa Thermal Resistance Junction to Ambient 80C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97=44 SEME IRFY140C LAB ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise stated) Parameter | Test Conditions | Min. | Typ. | Max. | Unit STATIC ELECTRICAL RATINGS BVpsg Drain Source Breakdown Voltage | Veg =0 Ip = 1mA 100 Vv ABVpss Temperature Coefficient of Reference to 25C 01 vec AT; Breakdown Voltage Ip = 1mA R Static Drain Source OnState V 40V I. = 128 0.092 PS(n) Resistance Gs p Vesith) Gate Threshold Voltage Vos = Ves Ip = 250uA 2 4 V Dts Forward Transconductance Vps 2 15V Ips = 12A 9.1 SB) Veg = 0 Vos = 0.8BV 25 Ipss Zero Gate Voltage Drain Current Gs pS DSS LA Ty = 125C 250 less Forward Gate Source Leakage Veg = 20V 100 A n less Reverse Gate Source Leakage Veg = -20V -100 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Veg =0 1660 Coss Output Capacitance Vps = 25V 550 pF Criss Reverse Transfer Capacitance f = 1MHz 120 Veg = 10V Ip = 15A Qg Total Gate Charge 30 59 nc Qgs Gate Source Charge Ip = 15A 2.4 12 C n Qga Gate Drain (Miller) Charge Vps = 0.5BVpss 12 30.7 t TurnOn Delay Time 21 dion) y Vpp = SOV t Rise Time 145 Ip = 15A ns tao) TurnOff Delay Time 64 Re = 9.12 t Fall Time 105 SOURCE - DRAIN DIODE CHARACTERISTICS Is Continuous Source Current 15 A Ism Pulse Source Current 60 Ig = 15A Ty = 25C Vsp Diode Forward Voltage 1.5 Vv Vas = 0 ter Reverse Recovery Time lg =15A Ty = 25C 400 ns Qr Reverse Recovery Charge dj/d,< 100A/us Vpp < 50V 2.4 uc PACKAGE CHARACTERISTICS Lp Internal Drain Inductance (from 6mm down drain lead pad to centre of die) 8.7 4 n Ls Internal Source Inductance (trom 6mm down source lead to centre of source bond pad) 8.7 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97