CMA50E1600HB
2 1
3
Single Thyristor
Thyristor
Part number
CMA50E1600HB
Backside: anode
TAV
T
V V1.31
RRM
50
1600
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● High creepage distance
between terminals
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA50E1600HB
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.30
R0.4 K/W
min.
50
VV
50T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
110
P
tot
310 WT = 25°C
C
50
1600
forward voltage drop
total power dissipation
Conditions
1.66
T = 25°C
VJ
125
V
T0
V0.83T = °C
VJ
150
r
T
9.6 mΩ
V1.31T = °C
VJ
I = A
T
V
50
1.77
I = A100
I = A100
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA79
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
26
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
550
595
1.11
1.06
A
A
A
A
470
505
1.52
1.48
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
= 0.3
di /dt A/µs;
G
=0.3
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
50 mA
T = °C-40
VJ
1.6 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
5 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
125 mA
I
L
25t µs
p
= 10
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 50 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 50 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.3
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA50E1600HB
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
XXXXXXXXX
C
M
A
50
E
1600
HB
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Single Thyristor
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C150
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
125-40
TO-247
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CMA50E1600HB 513974Tube 30CMA50E1600HBStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.83
mΩ
V
0 max
R
0 max
slope resistance *
7
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA50E1600HB
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
2 1
3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CMA50E1600HB
0 50 100 150
0
10
20
30
40
50
60
70
80
10 100 1000
1
10
100
1000
0,01 0,1 1
200
300
400
5
0
0
0,0 0,5 1,0 1,5 2,0
0
20
40
60
80
1
00
1 10 100 1000 10000
0,0
0,1
0,2
0,3
0,4
0,5
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
100
1000
10
0
00
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
V
G
[V]
I
G
[mA]
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
t
gd
[µs]
I
G
[mA]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 20 40 60
0
20
40
60
80
100
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
T
VJ
= 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
1 10 100 1000 10000
0,1
1
10
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
1
23
4
56
T
VJ
= 125°C
150°C
T
VJ
= 25°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
i R
thi
(K/W) t
i
(s)
1 0.044 0.011
2 0.039 0.0001
3 0.047 0.02
4 0.09 0.4
5 0.18 0.12
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191202cData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved