Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Fast Switching Performance BVDSS 60V
▼ Single Drive Requirement RDS(ON) 36mΩ
▼ Full Isolation Package ID23A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Pulsed Drain Current180
Total Power Dissipation 31.3
Continuous Drain Current, VGS @ 10V 23
Continuous Drain Current, VGS @ 10V 14
Drain-Source Voltage 60
Gate-Source Voltage +20
Parameter Rating
200901163
Halogen-Free Product
1
AP9971GI-HF
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 36 mΩ
VGS=4.5V, ID=12A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 17 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=18A - 18 30 nC
Qgs Gate-Source Charge VDS=48V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC
td(on) Turn-on Delay Time2VDS=30V - 9 - ns
trRise Time ID=18A - 24 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 26 - ns
tfFall Time RD=1.67Ω-7-
ns
Ciss Input Capacitance VGS=0V - 1700 2700 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=25A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 37 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GI-HF
AP9971GI-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.31 trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
25
30
35
40
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=18A
TC=25oC
0
20
40
60
80
100
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
TC=25oC10V
7.0V
5.0V
4.5V
0
10
20
30
40
50
60
70
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=18A
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
1
1.4
1.8
2.2
2.6
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
0.31 trr
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9971GI-HF
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Crss
Coss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.0
2
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
14
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
V DS =38V
V DS =48V
I
D=18A
