TECHNICAL DATA SHEET
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Website: http: //www.microsemi.com
T4-LDS-0175 Rev. 1 (101096) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
hFE
IC = 100μAdc, VCE = 5.0Vdc 2N3866, 2N3866UB 15 200
2N3866A, 2N3866AUB 25 200
IC = 360mAdc, VCE = 5.0Vdc 2N3866, 2N3866UB 5
2N3866A, 2N3866AUB 8
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 100mAdc, IB = 10mAdc 1.0
Collector-Emitter Cutoff Current – High Temperature Operation
ICES2
mAdc
VCE = 55Vdc
TA = +150°C
2.0
Forward Current Transfer Ratio – Low Temperature Operation
HFE3
VCE = 5.0Vdc
IC = 50mAdc, TA = -55°C
2N3866, 2N3866UB 7
2N3866A, 2N3866AUB 12
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small–Signal Short-Circuit Forward
Current Transfer Ratio |hfe|
IC = 50mAdc, VCE = 15Vdc, f = 100MHz 2N3866, 2N3866UB
2N3866A, 2N3866AUB
2.5
4.0
8.0
7.5
Output Capacitance
Cobo 3.5 pF
VCB = 28Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
POWER OUTPUT CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Power Output
VCC = 28Vdc; Pin = 0.15W; f = 400MHz *
VCC = 28Vdc; Pin = 0.075W; f = 400MHz *
P1out
P2out
1.0
0.5
2.0
W
Collector Efficiency
VCC = 28Vdc; Pin = 0.15W; f = 400MHz
VCC = 28Vdc; Pin = 0.075W; f = 400MHz
* See Figure 4 on /398
n1
n2
45
40 %
Clamp Inductive
Collector-Emitter Breakdown Voltage
VBE = 1.5Vdc
IC = 40mAdc
V(BR)CEX 55 Vdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.