AOT1606L/AOB1606L 60V N-Channel Rugged Planar MOSFET General Description Product Summary The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. VDS 60V ID (at VGS=10V) 178A RDS(ON) (at VGS=10V) < 6.3m 100% UIS Tested 100% Rg Tested TO-263 D2PAK TO220 Top View Bottom View Top View D D Bottom View D D D G G D S S D G S Continuous Drain Current G VGS TC=25C Pulsed Drain Current C Continuous Drain Current 20 V 126 A 12 IDSM TA=70C Units V 310 IDM TA=25C Maximum 60 178 ID TC=100C S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage G G A 10 Avalanche Current C IAS, IAR 125 A Avalanche energy L=0.1mH C TC=25C EAS, EAR 781 mJ Power Dissipation B TC=100C Power Dissipation A TA=70C TA=25C Rev0: May 2011 2.1 Steady-State Steady-State RJA RJC www.aosmd.com W 1.3 TJ, TSTG Symbol t 10s W 208 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 417 PD -55 to 175 Typ 12 48 0.3 C Max 15 60 0.36 Units C/W C/W C/W Page 1of 6 AOT1606L/AOB1606L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS, ID=250 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 310 VGS=10V, ID=20A TO220 Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge A 5 IGSS Units V 1 TJ=55C RDS(ON) Max 60 VDS=60V, VGS=0V VGS(th) Coss Typ 100 nA 3.1 3.7 V 5.5 6.3 9.4 10.8 5.2 53 6 m S 0.7 1 V 178 A A m 2980 3735 4500 pF 605 872 1140 pF 40 69 98 pF 1.6 3.2 4.8 68 85 102 nC VGS=10V, VDS=30V, ID=20A Qgs Gate Source Charge 19 nC Qgd Gate Drain Charge 24 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 31 ns tD(off) Turn-Off DelayTime 60 ns tf Turn-Off Fall Time 14 ns VGS=10V, VDS=30V, RL=1.5, RGEN=3 trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 33 48 63 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 280 411 540 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. Maximum UIS current limited by test equipment. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2011 www.aosmd.com Page 2 of 6 AOT1606L/AOB1606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 80 5.5V 5V 60 ID(A) ID (A) 60 40 40 VGS=4.5V 20 20 25C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 8 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 Normalized On-Resistance 2.2 6 RDS(ON) (m ) 125C VGS=10V 4 2 2.0 1.8 VGS=10V ID=20A 17 5 2 10 1.6 1.4 1.2 1.0 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 15 ID=20A 1.0E+01 12 40 9 125C IS (A) RDS(ON) (m ) 1.0E+00 6 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 3 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: May 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT1606L/AOB1606L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 9000 VDS=20V ID=20A 7500 Capacitance (pF) VGS (Volts) 8 6 4 2 6000 4500 Ciss 3000 Coss 1500 Crss 0 0 0 15 30 45 60 75 Qg (nC) Figure 7: Gate-Charge Characteristics 90 0 1000.0 10s RDS(ON) limited 30 100s DC 10.0 1ms 10ms 1.0 6000 17 5 2 10 4500 3000 TJ(Max)=175C TC=25C 0.1 TJ(Max)=175C TC=25C 7500 10s Power (W) ID (Amps) 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 9000 100.0 1500 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 1000 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JC Normalized Transient Thermal Resistance 5 0.1 10 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 0.001 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.36C/W 40 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: May 2011 www.aosmd.com Page 4 of 6 AOT1606L/AOB1606L 200 500 160 400 Power Dissipation (W) IAR (A) Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TA=25C 120 TA=100C TA=150C 80 TA=125C 300 200 40 100 0 0 1 10 100 1000 10000 Time in avalanche, tA ( s) Figure 12: Single Pulse Avalanche capability (Note C) 0 50 75 100 125 TCASE (C) Figure 13: Power De-rating (Note F) 150 175 10000 200 TA=25C 160 1000 Power (W) Current rating ID(A) 25 120 80 17 5 2 10 100 10 40 1 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 01000 0.1 10 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=60C/W 1 0.001 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: May 2011 www.aosmd.com Page 5 of 6 AOT1606L/AOB1606L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: May 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6