AOT1606L/AOB1606L
60V N-Channel Rugged Planar MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 178A
R
DS(ON)
(at V
GS
=10V) < 6.3mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
60V
The AOT1606L/AOB1606L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low R
DS(ON)
and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage
60
G
D
S
TO220
Top View Bottom View
GG
SD
DS
D
D
TO-263
D2PAK
Top View Bottom View
D
D
S
G
G
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.3 60
0.36
Power Dissipation
B
P
D
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
417
1.3
T
A
=25°C
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
178
126
T
C
=25°C
T
C
=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
10
Continuous Drain
Current
781
12
A125
V
V±20Gate-Source Voltage
Drain-Source Voltage 60
Units
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
Maximum Junction-to-Ambient
A
°C/W
R
θJA
12
48 15
310Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter Typ Max
T
C
=25°C
2.1
208
T
C
=100°C
G
D
S
TO220
Top View Bottom View
GG
SD
DS
D
D
TO-263
D2PAK
Top View Bottom View
D
D
S
G
G
Rev0: May 2011
www.aosmd.com Page 1of 6
AOT1606L/AOB1606L
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 2.5 3.1 3.7 V
I
D(ON)
310 A
5.5 6.3
T
J
=125°C 9.4 10.8
5.2 6 mΩ
g
FS
53 S
V
SD
0.7 1 V
I
S
178 A
C
iss
2980 3735 4500 pF
C
oss
605 872 1140 pF
C
rss
40 69 98 pF
R
g
1.6 3.2 4.8 Ω
Q
g
(10V) 68 85 102 nC
Q
gs
19 nC
Q
gd
24 nC
t
D(on)
18 ns
t
31
ns
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
DSS
µA
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=V
GS
, I
D
=250µΑ
V
DS
=0V, V
GS
= ±20V
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
TO220
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
TO263
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
V
=10V, V
=30V, R
=1.5
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=10V, V
DS
=30V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
t
r
31
ns
t
D(off)
60 ns
t
f
14 ns
t
rr
33 48 63 ns
Q
rr
280 411 540 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
V
GS
=10V, V
DS
=30V, R
L
=1.5
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev0: May 2011 www.aosmd.com Page 2 of 6
AOT1606L/AOB1606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
25
°
C
125°C
V
DS
=5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
5V
10V
5.5V
40
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
I
D
=20A
0
3
6
9
12
15
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25
°
C
125°C
V
DS
=5V
VGS=10V
ID=20A
25°C
125°C
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
5V
10V
5.5V
Rev0: May 2011 www.aosmd.com Page 3 of 6
AOT1606L/AOB1606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 15 30 45 60 75 90
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1500
3000
4500
6000
7500
9000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
1500
3000
4500
6000
7500
9000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Coss
C
rss
VDS=20V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
T
C
=25°C
100
µ
s
40
0
2
4
6
8
10
0 15 30 45 60 75 90
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1500
3000
4500
6000
7500
9000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
1500
3000
4500
6000
7500
9000
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Coss
C
rss
VDS=20V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
T
C
=25°C
100
µ
s
RθJC=0.36°C/W
Rev0: May 2011 www.aosmd.com Page 4 of 6
AOT1606L/AOB1606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
100
200
300
400
500
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
40
80
120
160
200
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
0
40
80
120
160
200
1 10 100 1000 10000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°CT
A
=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
100
200
300
400
500
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
40
80
120
160
200
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
RθJA=60°C/W
0
40
80
120
160
200
1 10 100 1000 10000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°CT
A
=100°C
TA=125°C
Rev0: May 2011 www.aosmd.com Page 5 of 6
AOT1606L/AOB1606L
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev0: May 2011 www.aosmd.com Page 6 of 6