Transistors Power Transistor ( 80V, 1A) 2SB1260/2SB1181/2SB1241 @Features 1) High breakdown voltage and high @External dimensions (Units: mm) current. 28B1260 2SB1181 ae = = 2 650.2 2aTRe Veo 80V, lc 1A - toe 3 eee] 005 + ! et 2) Good hee linearity. 3 ast? a | Sot) | 4 .0.5:t0.1_ + ean 15102 4 a 3) Low Veetean. 3 | (Seer s) ae ; i : oo ; 4) Complements the 2SD1898/ aly H al 8 a Ff HRY pi 6 + Le o 28D1863/2SD1733. ali Lil i 0754p 7] 0.6501 t1 a opetieli | ool | @Structure 9 i Ml 0.48 b5 ry | ossto. itaxi fi] 0.40.1 J110.540.1]|] 0.40.1 2.30.2! 2.30.2 1.0+0.2 Epitaxial planar type 2) 150.1 " Pista. . PNP silicon transistor 3,020.2 ly a (1) (2) (@) (1) Base ; (1) Base ROHM:MPT3 Abbreviated (2) Collector a :CPT3 (2) Collector EIAJ:SC-62 symbol:BH* (3) Emitter WAY 1 SC-63 (3) Emitter 28B1241 pr : 0.85Max, ol al) @ 2sai24| (1) Emitter ROHM : ATV (2) Collector (3} Base * Denotes hre (96-123-B54) Renm 201 Bi-polar transistors imTransistors 2SB1260/2SB1181/2SB1241 @Absoiute maximum ratings (Ta = 25C) Parameter Symbot Limits Unit Collector-base voltage Vceo 80 Vv Collector-emitter voltage VcEo 80 Vv Emitter-base voltage VeBo 5 Vv Ic 1 A(DC) Collector current tcp 2 A(Pulse) *1 1 0.5 2SB1260 *2 Collector power Po 2 Ww , dissipation =| 9551241, 2581181 1 8 28B1181 10 W(Tc=25C) Junction temperature Tj 150 c Storage temperature Tstg | 75~150 Cc *1 Single puise Pw=100ms %* 2 On 40 x 40 x 0.7 mm ceramic board. *3 Printed circuit board 1.7mm thick, collector copper plating 1cm? or larger. @Electrical characteristics (Ta = 25C) Parameter Symbol | Min. | Typ. | Max. | Unit Conditions Collector-base breakdown voltage BVcsao | 80 _ _ Vv Ic=-50 vA Collector-emitter breakdown voltage BVceo | 80 _ _ Vv lo= TMA Emitter-base breakdown voltage BVepao | 5 _ _ v le=50 pA Collector cutoff current tcao _ _ BA | Vca=--60V Emitter cutoff current leBo _ 1 HA | Vep=4V Collector-emitter saturation voltage VCE (sat) _ | 0.4 Vv Ic/ta=--500mA/~50mA 2$B1260, 2SB1181 82 aad 390 | DC current transfer ratio rE Vee=~--3V, c= -O.1A 28B1241 120 _ 390 _ we 2SB1260, 2SB1241 ~ 100 _ MHz | Vce=-5V, le=50mA, f=30MHz Transition frequency fr 25B1181 _ 100 MHz | Vce==10V, fe=50mA, f=30MHz Output capacitance _ Cob _ 25 _ pF | Vcs=--10V, le=0A, f=1MHz @Packaging specifications and hre Package Taping Code TL Tv2 Basic ordering 2500 2500 Type hee | unit. (pieces) 2881260 | POR Oo 7 2881241 | QR 2581181 | POR hre values are classified as follows : {tem P Q R hre 82~180 | 120~270 | 180~390 202 nenmTransistors @ Electrical characteristic curves -1000 < & 3 100 5 = -10 = oO coy o 5 a 1 all ond 6 o 0.1 0 -0.2 64 06 -0.8 -1.0 -1.2 -1.4 -16 BASE TO EMITTER VOLTAGE : Vac (V) Fig.1 Grounded emitter propagation characteristics -0.01 1-2 5-10-20 -50-100-200-500-1000-2000 COLLECTOR CURRENT: ic (mA) COLLECTOR SATURATION VOLTAGE : Veta (V) Fig.4 Collector-emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE :Cib (pF) 0.1 ot 5 10 EMITTER TO BASE VOLTAGE : Vee (V) Fig. 7 mitter input capacitance vs. emitter-base voltage TRANSITION FREQUENCY : fr (MHz) COLLECTOR CURRENT: tc (A) COLLECTOR CURRENT: Ic (mA) 2SB1260/2SB1181/2SB1241 _ e ls=OmA 4Aet Fig.2 Grounded emitter output characteristics 5 10 EMITTER CURRENT : Ie (mA) 1000 Fig.5 Gain bandwidth product vs. emitter current T * Single nonrepetitive 0.5 1-2-5 -10 -20 -80 -100 COLLECTOR TO EMITTER VOLTAGE : Vce (V) Fig. 8 Safe operating area (2$B1260) 71.8 -2.0 COLLECTOR TO EMITTER VOLTAGE: Vor (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN: hre 1000 Ta=25C 20 190 1-2 6 -10 -20 -50-100 -200-500-1000-2000 COLLECTOR CURRENT : ic (mA) Fig.3 DC current gain vs. collector current 1900 500 200 Bi-polar transistors 1 0. . ~ - COLLECTOR TO BASE VOLTAGE: Vea (V) Fig.6 Collector output capacitance vs. collector-base voltage T %* Single = nonrepetitive xs 5 2 s) k: 500m >, #2 200m 100m COLLECTOR CU! 8 3 33 Printed circuit board: 1.7 mm thick with collector 1 atleast 1 cm. COLLECTOR TO EMITTER VOLTAGE : Vcr (V) Fig.9 Safe operating area (28B1241) 203Transistors 2SB1260/2SB1181/2SB1241 @Electrical characteristic curves a=25T * Single < 2 gi x = 3 x 0.1 o oO uy a 9 a -0.01 0.10.2 0.5 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : Vce (V) Fig.10 Safe operating area (28B1181) 204 RenNM