TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
March 2, 2001
1
20 - 40 GHz X2 Frequency Multiplier TGC1430F-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• 20 - 40 GHz Output Frequencies
• 10 - 20 GHz Fundamental Frequencies
• -12 +/- 2dB Conversion Gain
• 18 dBm Input Drive Optimum
• 25dB Fundamental Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
Chip Dimensions 1.50 mm x 1.50 mm
Conversion Gain vs Input Frequency (Input @ 17.5dBm) Conversion Gain and Fundamental Isolation
for 27 - 32 GHz Output
Fundamental Isolation
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Input Frequency (GHz)
Conversion Gain (dB)
@17.5dBm
0
5
10
15
20
25
30
35
40
45
6 8 10 12 14 16 18 20 22
Input Frequency (GHz)
Fundamental Isolation (dB)
@17.5dBm
-25
-20
-15
-10
-5
0
13.5 14.0 14.5 15.0 15.5 16.0
Input Frequency (GHz)
Conversion Gain (dB)
10
15
20
25
30
35
Fund. Isolation
(
dB
)
Input Drive of +17.5dB
m
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
March 2, 2001
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGC1430F - Recommended Assembly Drawing
TGC1430F-EPU
RFin RFout
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
March 2, 2001
Reflow process assembly notes:
•=AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•=alloy station or conveyor furnace with reducing atmosphere
•=no fluxes should be utilized
•=coefficient of thermal expansion matching is critical for long-term reliability
•=storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=vacuum pencils and/or vacuum collets preferred method of pick up
•=avoidance of air bridges during placement
•=force impact critical during auto placement
•=organic attachment can be used in low-power applications
•=curing should be done in a convection oven; proper exhaust is a safety concern
•=microwave or radiant curing should not be used because of differential heating
•=coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•=thermosonic ball bonding is the preferred interconnect technique
•=force, time, and ultrasonics are critical parameters
•=aluminum wire should not be used
•=discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•=maximum stage temperature: 200ΓC
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430F-EPU
