SGS-THOMSON BU931T/BU931TFI MICROELECTRONICS BU931SM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA ky VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES POWER PACKAGE SPECIFICALLY DESIGNED FOR SURFACE MOUNTING (Power SO-10 ) APPLICATIONS a HIGH RUGGEDNESS ELECTRONIC IGNITIONS Power SO-10 INTERNAL SCHEMATIC DIAGRAM for Power SO-10 Emitter: pins 1-5 Base: pins 6 - 10 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BU931T BU931TFI | BU931SM Vces |Collector-Emitter Voltage (VBe = 0) 500 Vv Vceo |Collector-Emitter Voltage (lp = 0) 400 Vv Veso |Emitter-Base Voltage (Ic = 0) 5 Vv Ic Collector Current 10 A lom Collector Peak Current 15 A lp Base Current 1 A lau Base Peak Current 5 A Prot Total Dissipation at Tc = 25 C 125 45 125 W Tsig Storage Temperature -65 to 175 | -65to 175 | -65 to 175 c Tj Max. Operating Junction Temperature 175 175 175 C Dicember 1993 1/8BU931T/BU931TFI/BU931SM THERMAL DATA TO-220 ISOWATT220 | PowerSO-10 Rthj-case |Thermal Resistance Junction-case Max 1.2 3.3 1.2 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Ices Collector Cut-off Vce = 500 V 100 HA Current (Vge = 0) Vce=500 V 1) = 125C 0.5 mA IcEO Collector Cut-off Vce = 400 V 100 HA Current (Ip = 0) Voce =450V T)= 125C 0.5 mA lEBO Emitter Cut-off Current |Vep =5 V 20 mA (Ic = 0) VceEqsus)* Collector-Emitter lo = 100 mA L=10mH lp =0 400 Vv Saturation Voltage Vc_amp = RATED Vceo (See FIG.4) VceE(saty* |Collector-Emitter Ic=7A lp = 70 mA 1.6 Vv Saturation Voltage Ic=8A Ip = 100 mA 1.8 Vv VeBeE(saty* |Base-Emitter lc=7A Ip = 70 mA 2.2 Vv Saturation Voltage Ilc=8A Ip = 100 mA 2.4 Vv Nre* DC Current Gain Ic=5A Vce=10V 300 Ve Diode Forward Voltage [IF =10A 2.5 Vv Functional Test Vcc = 24 V Velamp = 400 V L= 7 mH 8 A (see fig. 1) INDUCTIVE LOAD Veco = 12 V Velamp = 300 V L= 7 mH ts Storage Time lc=7A Ip =70mA 15 ys tt Fall Time Vee=0- Roe = 47 Q 0.5 us (see fig. 3) x Pulsed: Pulse duration = 300 us, duty cycle 1.5% Safe Operating Areas DC Current Gain IcfA) G- 5752 4 lo WAX PULSE OPERATION * 2 PULSED 10', 5 le MAX 4 CONT 2 0 TO-220 10 A PawarS0-1 a IsoWwATT220 4 z 1d, 5 * For single non 4 repetitive pulse D.C. 2 10 2 464 z 468 2 4 64 10 10' 107 Vee (V) 2/8 ka 3GS-THOMSON yf PONIESCollector-emitter Sturation Voltage - 5755 Veetsat () 2 6 Ip (A) Collector-emitter Sturation Voltage YcE(sat) (vw) Q so 100 lgima) Base-emitter Sturation Voltage Vee(sat) () 1 2 4 8 Ig fA) ky BU931T/BU931TFI/BU931SM Collector-emitter Sturation Voltage G-5754 1 2 4 6 gta Base-emitter Sturation Voltage G-388T Veetaat} ww) 1 2 4 6 Ig lA} Switching Times Inductive Load a svat t {ps) 10 1 2 4 6 81 Teta 3/8 SGS-THOMSONBU931T/BU931TFI/BU931SM FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms 24 16.6 ms 11.6ms L=7mH INPUT - SIGNAL Vz 0 Ig= 0.34 DAIVER AND BASE CURRENT Lon CURRENT 0 __ LIMITING CIRCUIT I=8A COLLECTOR J } CURRENT 0 COLLECTOR clamp EMITTER 020 VOLTAGE 26v 5 3678 $-3677 FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit $co7550 sia 4/8 ky;BU931T/BU931TFI/BU931SM 0-220 MECHANICAL DAT D1 5/8 & SGS-THOMSONBU931T/BU931TFI/BU931SM IWATT220 MECHANICAL D i" 2 | La PO11G 6/8 iar $GS-THOMSON Jf ROMICSBU931T/BU931TFI/BU931SM er SO-10 MECHANICAL D DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 3.45 3.5 3.55 0.135 0.137 0.140 B 1.28 1.30 0.050 0.051 Cc 0.15 0.006 D 9.40 9.50 9.60 0.370 0.374 0.378 E 4.98 5.08 5.48 0.196 0.200 0.216 E1 0.40 0.45 0.60 0.016 0.018 0.024 E2 1.17 1.27 1.37 0.046 0.050 0.054 F 9.30 9.40 9.50 0.366 0.370 0.374 FA 7.95 8.00 8.15 0.313 0.315 0.321 7.40 7.50 7.60 0.291 0.295 0.299 H 6.80 6.90 7.00 0.267 0.417 0.421 | 0.10 0.004 K 13.80 14.10 14.40 0.543 0.555 0.567 L 0.40 0.50 0.016 0.020 M 1.60 1.67 1.80 0.063 0.066 0.071 N 0.60 0.08 1.00 0.024 0.031 0.039 | 0G mm. 7/8 & SGS-THOMSONBU931T/BU931TFI/BU931SM Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 &r SGS-THOMSON