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TO SHIBA Schottky Barrier Rectifier Schottky Barrier Ty pe
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.49 V (max)
• Average forward current: IF(AV) = 1 A
• Repetitive peak reverse voltage: VRRM = 40 V
• Suitable for compact assembly due to small surface-mount package
“S-FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse vol t age VRRM 40 V
Average forward current IF (AV) 1 (Note 1)
A
Non-repetitive peak forward surge current IFSM 20 (50 Hz) A
Junction temperature Tj -55 to 150 °C
Storage temperature Tstg -55 to 150 °C
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land siz e: 6 mm × 6 mm)
Rectangular waveform (α = 180°), VR = 20 V
Note: Using contin uou sly under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
VFM(1) IFM = 0.1 A ― 0.395 ―
V
VFM(2) IFM = 0.7 A ― 0.475 0.49
VFM(3) IFM = 1 A ― 0.51 ―
Repetitive peak reverse current IRRM(1) VRRM = 5 V ― 0.6 ― μA
IRRM(2) VRRM = 40 V ― ― 100
Junction capacitance Cj VR = 10 V, f = 1 MHz ― 47 ― pF
Thermal resistanc e (juncti on to ambient) Rth(j-a)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0. 64 mm)
― ― 70
°C/W
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1. 6 mm)
― ― 140
Thermal resistanc e (juncti on to lead) Rth(j-ℓ) ― ― ― 20 °C/W
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
1999-07
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Marking
Abbreviation Code Part No.
S4 CRS04
Land Pattern Dimensions (for reference only)
Handling Preca ution
Schottky barrier diodes have reverse current characteris tics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded
during operation, even for an instant. The following are the general derating methods that we recommend when you
design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of
IF(AV) and Tj be below 120°C. W hen using this device, take the margin into consideration by using an
allowable Tamax-IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device
be used at a Tj of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mount ing c onditi on. W hen us ing
a device, design a circ uit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.
2.8
1.2
1.2
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Transient thermal resistance
r
th(j-a)
(°C/W)
Maximum allowable lead ltemperature
Ta max (°C)
Instantaneous forward voltage VF (V)
I
F
– V
F
Instantaneous forward current
I
F
(A)
Average forward current IF(AV) (A)
P
F(AV)
– I
F(AV)
Average forward power di ssi pati on
P
F(AV)
(W)
Average forward current IF(AV) (A)
Ta max – I
F(AV)
Ceramic substrate (substrate size:
50 mm × 50 mm, soldering land: 2 mm × 2 mm)
Maximum allowable ltemperature
Ta max (°C)
Average forward current IF(AV) (A)
Ta max – I
F(AV)
Glass-ep o xy sub str at e (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
time t (ms)
0
160
0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2
0
40
20
60
120
100
80
α = 60°
120°
DC
360°
0°
Rectangular waveform
α
VR = 20 V
IF(AV)
Conduction angle α
180°
140
180°
120°
0
0
40
160
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
α = 60°
DC
360°
0°
α
VR = 20 V
IF (AV)
Conduction
angle α
140
Rectangular
waveform
0 0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2 0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2
0.8
0
0.4
0
0.2
0.1
0.3
0.5
360°
0°
Rectangular
waveform
α
Conduction angle α
α = 60°
120°
180°
DC
0.6
0.7
0 0.2
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.4 1.2
75°C
25°C
125°C
Tj = 150°C
Pulse measurement
r
th(j-a)
– t
0.1
1
100
1000
1 10 100 100000
1000 10000
10
Device mounted on a ceramic board:
board size:
50 mm × 50 mm
S
oldering land: 2.0 mm × 2.0 mm
board
thickness: 0.64 mm
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
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Average reverse power di ssi pati on
P
R(AV)
(W)
Number of cycles
Peak repetiti ve forward current
Peak repetitive forward current
I
FRM
(A)
Reverse vol tag e VR (V)
C
j
– V
R
(typ.)
Junction c a pacitanc e Cj (pF)
Junction tempera tu re Tj (°C)
I
R
– T
j
(typ.)
Reverse cur re nt
I
R
(mA)
Reverse vol tag e VR (V)
P
R(AV)
– V
R
(typ.)
1 100 10
0
8
16
32
20
24
4
12
28
Ta = 25°C
f = 50 Hz
f = 1 MHz
Ta = 25°C
1
100
300
10 100
10
500
30
50
3 30 5 50
0 20 120 80 40 60 100
100
1
0.0001
0.01
10
140
0.1
160
0.001
Pulse measurement
VR = 5 V
20 V
10 V
40 V
30 V
0.3
0
0.1
0.2
0.4
0.6
0.5
0 10 20 40 30
60°
120°
180°
240°
300°
DC
360°
0°
Rectangular
waveform
Conduction angle α
Tj = 150°C
VR
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