www.irf.com 1
12/9/04
IRFR13N15DPbF
IRFU13N15DPbF
SMPS MOSFET HEXFET® Power MOSFET
VDSS RDS(on) max ID
150V 0.18Ω14A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.8 A
IDM Pulsed Drain Current 56
PD @TC = 25°C Power Dissipation 86 W
Linear Derating Factor 0.57 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 3.8 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Notes through are on page 10
D-Pak
IRFR13N15D I-Pak
IRFU13N15D
PD - 95549A
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l Telecom 48V input Active Clamp Forward Converter
lLead-Free
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IRFR/U13N15DPbF
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 5.0 ––– ––– S VDS = 50V, ID = 8.3A
QgTotal Gate Charge –– – 19 29 I D = 8.3A
Qgs Gate-to-Source Charge ––– 5.5 8.2 nC VDS = 120V
Qgd Gate-to-Drain ("Miller") Charge ––– 9.4 14 VGS = 10V,
td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 75V
trRise Time ––– 26 ––– ID = 8.3A
td(off) Turn-Off Delay Time ––– 12 ––– RG = 11Ω
tfFall Time ––– 11 ––– VGS = 10V
Ciss Input Capacitance ––– 620 ––– VGS = 0V
Coss Output Capacitance ––– 130 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 38 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 62 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 120V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 130 mJ
IAR Avalanche Current––– 8.3 A
EAR Repetitive Avalanche Energy––– 8.6 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V
trr Reverse Recovery Time ––– 110 ––– ns TJ = 25°C, IF = 8.3A
Qrr Reverse RecoveryCharge ––– 520 ––– nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
14
56
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 – –– – –– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.18 ΩVGS = 10V, ID = 8.3A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.75
RθJA Junction-to-Ambient (PCB mount)* –– – 5 0 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
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IRFR/U13N15DPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
5 6 7 8 9 10 11
V = 5 0 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
0.01
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
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IRFR/U13N15DPbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
8.3A
V = 30V
DS
V = 75V
DS
V = 120V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Dr ain Curr ent (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
0.1
1
10
100
1000
1 10 100 100
0
OPERATION IN THIS AR EA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source V oltage (V )
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100 1000
VDS, Drain-to- Sour ce V olt age (V )
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
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IRFR/U13N15DPbF
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular P ulse D ur ation ( sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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IRFR/U13N15DPbF
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
40
80
120
160
200
240
Start ing T , Juncti on Temper ature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
3.4A
5.9A
8.3A
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IRFR/U13N15DPbF
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
e-Applied
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
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IRFR/U13N15DPbF
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
EXAMPLE: WITH AS SEMBLY
THIS IS AN IRFR120
LOT CODE 1234 YEAR 9 = 199
9
DATE CODE
WEEK 16
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
AS S EMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CO DE
OR
P = DE S IGNAT ES LEAD-F RE E
PRODUCT (OPTIONAL)
Note: "P" in assembly line position
indicates "Lead-F ree"
12 34
WEEK 16
A = AS SE MB LY S IT E CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
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IRFR/U13N15DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
AS S E MB L Y
EXAMPLE: WIT H AS SEMBLY
THIS IS AN IRFU120
YEA R 9 = 199
9
DATE C ODE
LI NE A
WEEK 19
IN T HE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRFU120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assembly line
pos it ion indicates "Lead-F ree"
OR
56 78
ASSEMBLY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
IRFU120
PART NU MB ER
WEE K 19
DATE CODE
YEAR 9 = 1999
A = AS S EMB LY S IT E CODE
P = DES IGNAT ES LEAD-F RE E
PRODUCT ( OPTIONAL)
10 www.irf.com
IRFR/U13N15DPbF
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 8.3A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 3.8mH
RG = 25Ω, IAS = 8.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIR ECTION FEED DIRECTION
16.3 ( .641
)
15.7 ( .619
)
TRR TRL
N
OTES :
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/