PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 0.07 G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 17 12 68 3.8 45 0.30 20 71 10 4.5 6.8 -55 to + 175 Units A W W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units --- --- 3.3 40 C/W 04/19/04 IRFZ24NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 --- --- 2.0 4.5 --- --- --- --- --- --- --- --- --- --- --- LS Internal Source Inductance --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID =1mA 0.07 VGS =10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 20 ID = 10A 5.3 nC VDS = 44V 7.6 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 10A ns --- RG = 24 --- RD = 2.6, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 370 --- VGS = 0V 140 --- pF VDS = 25V 65 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 17 showing the A G integral reverse --- --- 68 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 10A, VGS = 0V --- 56 83 ns TJ = 25C, IF = 10A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =1.0mH RG = 25, IAS = 10A. (See Figure 12) Pulse width 280s; duty cycle 2%. Uses IRFZ24N data and test conditions ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IRFZ24NS/LPbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , D rain-to-S ource C urrent (A ) D I , D rain-to-Source Current (A ) D TOP 10 4.5V 20 s P U LS E W ID TH T TCJ == 25C 2 5C 1 0.1 1 10 100 10 4 .5V 2 0 s P U L S E W ID T H TTCJ == 175C 17 5C 1 A 0.1 Fig 1. Typical Output Characteristics R D S (on ) , D rain -to-S ou rc e O n R es is tan c e (N orm a liz ed) I D , D rain-to-So urce C urren t (A ) 3.0 TJ = 2 5 C T J = 1 7 5 C 10 V DS = 2 5V 2 0 s P U L S E W ID TH 5 6 7 8 9 V G S , G ate-to -So urce Voltag e (V) Fig 3. Typical Transfer Characteristics 100 A Fig 2. Typical Output Characteristics 100 4 10 V DS , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ourc e V oltage (V ) 1 1 10 A I D = 17 A 2.5 2.0 1.5 1.0 0.5 V G S = 1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , J unc tion T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature IRFZ24NS/LPbF V GS C is s C rs s C o ss C , Capacitance (pF) 600 500 C iss 400 C oss = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd V G S , G ate-to-S ource V oltage (V ) 700 V D S = 44 V V D S = 28 V 16 12 300 200 I D = 10 A C rss 100 0 1 10 100 8 4 FO R TE S T C IRC UIT S E E FIG U R E 1 3 0 A 0 V D S , D rain-to-S ourc e V oltage (V ) 8 12 16 20 A Q G , T otal G ate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) I D , D rain Current (A ) I S D , R everse Drain C urrent (A ) 4 T J = 1 75 C TJ = 25 C 10 V G S = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.0 100 10 s 10 100 s 1m s T C = 25 C T J = 17 5C S ing le P u lse 1 1 10m s 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area A IRFZ24NS/LPbF RD V DS 20 VGS D.U.T. RG + -V DD 16 I D , Drain Current (A) 10V Pulse Width 1 s Duty Factor 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 VDS 90% 4 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFZ24NS/LPbF L VDS D.U.T. RG + - VDD IAS 10 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S ingle Pulse Avalanc he E nergy (m J) 140 ID 4.2 A 7.2A 1 0A TOP 120 B O T TO M 100 80 60 40 20 0 V D D = 25 V 25 50 75 100 125 A 150 175 S tarting T J , J unc tion T em perature (C ) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRFZ24NS/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - V DD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRFZ24NS/LPbF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 0 2, 2000 IN T H E AS S E MB L Y L INE "L " IN T E R N AT IONAL R E CT IF IE R L OGO N ote: "P " in as s embly line pos ition indicates "L ead-F ree" P AR T N U MB E R F 53 0S AS S E MB L Y L OT CODE OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L IRFZ24NS/LPbF TO-262 Package Outline TO-262 Part Marking Information E X AM P L E : T H IS IS AN IR L 3103 L L OT COD E 178 9 AS S E MB L E D ON W W 19 , 199 7 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E YE AR 7 = 19 97 WE E K 19 L IN E C OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R D AT E COD E P = D E S IGN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) YE AR 7 = 19 97 WE E K 19 A = AS S E MB L Y S IT E COD E IRFZ24NS/LPbF D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 (.0 6 5 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5.4 2 (.6 0 9 ) 1 5.2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 0.9 0 (.4 2 9 ) 1 0.7 0 (.4 2 1 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) F E E D D IRE CTIO N 13 .5 0 (.53 2) 12 .8 0 (.50 4) 27 .40 (1.0 79) 23 .90 (.94 1) 4 3 30 .0 0 (14.1 73) MAX. 60.00 (2.3 62) M IN . NO TES : 1. C O M F O R M S T O E IA-4 18. 2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R . 3. D IM E N S IO N M E A SU R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30 .40 (1.19 7) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/