© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2 1Publication Order Number:
MPS5172/D
MPS5172
General Purpose Transistor
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base V oltage VCBO 25 Vdc
Emitter−Base V oltage VEBO 5.0 Vdc
Collector Current − Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Power Dissipation @ TA = 60°C PD450 mW
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be a ffected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
TO−92 (TO−226)
CASE 29
STYLE 1
MARKING DIAGRAM
MPS5172 = Device Code
A = Assembly Location
Y = Year
WW = W ork Week
G= Pb−Free Package
MPS
5172
AYWWG
G
(Note: Microdot may be in either location)
COLLECTOR
3
2
BASE
1
EMITTER
3
12
Device Package Shipping
ORDERING INFORMATION
MPS5172 TO−92 5000 / Bulk
MPS5172RLRMG TO−92
(Pb−Free) 2000/Ammo Pac
k
MPS5172RLRM TO−92 2000/Ammo Pac
k
MPS5172G TO−92
(Pb−Free) 5000 / Bulk
MPS5172
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mA, IB = 0) V(BR)CEO 25 − Vdc
Collector Cutoff Current
(VCE = 25 V, IB = 0) ICES − 100 nAdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TA = 100°C)
ICBO −
−100
10 nAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0) IEBO − 100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(VCE = 10 V, IC = 10 mA) hFE 100 500 −
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc
Base−Emitter On Voltage
(IC = 10 mAdc, VCE = 10 V) VBE(on) 0.5 1.25 Vdc
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
(VCB = 10 V, f = 1.0 MHz) Ccb 1.6 10 pF
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 750 −
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MPS5172
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3
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
TJ = 125°C
−55°C
25°C
VCE = 1.0 V
VCE = 10 V
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
100
80
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
1.4
Figure 3. Collector Characteristics
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
1.6
100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
*qVC for VCE(sat)
qVB for VBE
0.1 0.2 0.5
Figure 4. “On” Voltages
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.002
TJ = 25°C
IC = 1.0 mA 10 mA 100 mA
Figure 5. Temperature Coefficients
50 mA
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
IB = 500 mA
400 mA
300 mA
200 mA
100 mA
*APPLIES for IC/IB ≤ hFE/2
25°C to 125°C
−55°C to 25°C
25°C to 125°C
−55°C to 25°C
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0−2.4
0.8
0
−1.6
−0.8
1.0 2.0 5.0 10 20 50 100
0.1 0.2 0.5
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MPS5172
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4
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
500
0.5
10
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
TJ = 25°C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
TJ = 25°C
f = 1.0 MHz
Cib
Cob
MPS5172
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5
Figure 8. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) •RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 9
Figure 10.
TJ, JUNCTION TEMPERATURE (°C)
104
−40
IC, COLLECTOR CURRENT (nA)
Figure 11.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
400
2.0
IC, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the de-
vice thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
8 by the steady state value RqJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
tion Center or on our website at www.onsemi.com.
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 1 1 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. T J(pk)
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10−2
10−1
100
101
102
103
− 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25°C1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20 40
TJ = 150°C
100 ms
MPS5172
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
CASE 29−11
ISSUE AL
TO−92 (TO−226)
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
3. SOURCE
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MPS5172/D
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