2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR Ratings 300 300 32 128 30 32 597.4 27 Unit V V A A V A mJ mJ Equivalent circuit schematic Remarks Drain(D) VGS=-30V Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=13A,L= 6.13mH, VCC=48V,RG=50 dV DS /dt dV/dt PD Tch Tstg 20 5 270 2.02 +150 -55 to +150 kV/s VDS< =300V kV/s Note *4 Tc=25C W Ta=25C C C EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. < -ID, -di/dt = 50A/s,VCC= < BVDSS,Tch= <150C Note *4:IF = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS =300V VGS=0V Tch=125C VDS =240V VGS=0V VGS=30V VDS=0V ID=16A VGS=10V ID=16A VDS=25V VDS=25V VGS=0V f=1MH VCC=180V ID=16A VGS=10V Min. Typ. 300 3.0 12 RGS=10 VCC=150V ID=32A VGS=10V IF=32A VGS=0V Tch=25C IF=32A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 250 100 0.13 0.10 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 44.5 67 18 27 13.5 20.5 0.90 1.50 270 3.0 Units V V A A nA S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 62 Units C/W C/W 1 2SK3772-01 FUJI POWER MOSFET Characteristics 400 Allowable Power Dissipation PD=f(Tc) 80 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 70 20V 10V 8V 60 300 ID [A] PD [W] 50 200 40 30 7V 20 100 6.5V 10 VGS=6.0V 0 0 0 25 50 75 100 125 0 150 4 8 12 100 16 20 24 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6V 0.5 7V 6.5V 100 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=16A,VGS=10V 0.25 0.20 8V 0.15 10V 20V RDS(on) [ ] RDS(on) [ ] 0.4 0.3 0.2 max. 0.10 typ. 0.1 0.05 0.0 0.00 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3772-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=32A,Tch=25 C 6.5 12 6.0 5.5 Vcc= 60V max. 10 150V 4.5 240V 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 Tch [C] 4 10 40 50 60 70 80 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 100 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 3 10 IF [A] C [pF] 10 2 10 Coss 1 Crss 1 10 0 0.1 0.00 10 0 10 10 1 2 10 3 10 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A IAS=13A 600 500 2 td(off) EAV [mJ] 10 t [ns] td(on) IAS=20A 400 300 IAS=32A tf 10 1 200 tr 100 10 0 10 0 -1 10 0 10 1 2 10 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3772-01 2 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 -2 10 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 -3 10 -2 10 -1 10 0 10 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4