BFR360F Low Noise Silicon Bipolar RF Transistor * Low noise amplifier for low current applications * Collector design supports 5 V supply voltage 2 3 1 * For oscillators up to 3.5 GHz * Low noise figure 1.0 dB at 1.8 GHz * Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360F Marking FBs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature TJ 150 C Storage temperature TStg V mA TS 98C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 250 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2013-11-06 BFR360F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 4 V, VBE = 0 - 1 30 VCE = 10 V, VBE = 0, TA = 85C - 2 50 ICBO - 1 30 IEBO - 1 500 hFE 90 120 160 Verified by random sampling Collector-base cutoff current VCB = 4 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 3 V, pulse measured 2 2013-11-06 BFR360F Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 11 14 - Ccb - 0.32 0.5 Cce - 0.2 - Ceb - 0.4 - NFmin - 1 - IC = 15 mA, VCE = 3 V, ZS = ZSopt, Z L = ZLopt, f = 1.8 GHz - 15.5 - f = 3 GHz - 11 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB IC = 3 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) Gma |S21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, ZS = ZL = 50, f = 1.8 GHz - 13 - f = 3 GHz - 9 - IP3 - 24 - P-1dB - 9 - Third order intercept point at output2) dBm VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50 1dB compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2013-11-06 BFR360F Total power dissipation P tot = (TS) Collector-base capacitance Ccb = (VCB ) f = 1MHz 240 0.8 mW pF 0.6 Ccb Ptot 180 150 0.5 120 0.4 90 0.3 60 0.2 30 0.1 0 0 15 30 45 60 75 90 105 120 C 0 0 150 2 4 6 8 10 12 TS V 16 VCB Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (Output, ZS=ZL=50) f = 1GHz VCE = parameter, f = 1.8GHz VCE = parameter 30 17 GHz dBm 14 5V 20 12 fT IP 3 3V 15 10 2V 8 10 6V 4V 3V 2V 1V 5 1V 6 4 0 -5 0 0.7V 2 5 10 15 20 25 30 mA 0 0 40 IC 5 10 15 20 25 30 mA 40 IC 4 2013-11-06 BFR360F Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) f = 0.9GHz f = 1.8GHz VCE = parameter VCE = parameter 18 24 dB 5V dB 22 5V 3V 21 2V 3V G G 20 19 14 2V 18 1V 17 12 1V 16 15 0.7V 10 14 0.7V 13 12 0 5 10 15 20 25 30 mA 8 0 40 5 10 15 20 25 30 IC 40 IC Power Gain Gma, Gms = (f) Insertion Power Gain |S21| = (f) VCE = parameter VCE = parameter 49 36 dB dB Ic = 15mA 34 24 Ic = 15mA 5V 2V 1V 0.7V G 28 G 39 29 20 24 16 19 12 9 5V 2V 1V 0.7V 4 0 0.5 14 mA 8 4 1 1.5 2 2.5 3 3.5 GHz 0 0 4.5 f 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f 5 2013-11-06 BFR360F Power Gain Gma, Gms = (VCE ): Power gain Gma, Gms = (IC) |S21| = (VCE): - - - - VCE = 3V f = parameter f = parameter 24 dB 22 dB Ic = 15mA 0.9GHz 0.9GHz 19 0.9GHz 18 17 18 G G 20 1.8GHz 16 15 16 1.8GHz 14 1.8GHz 14 13 2.4GHz 12 11 12 3GHz 10 9 10 4GHz 8 8 0 1 2 3 4 5 V 7 0 7 5 10 15 VCE 20 25 30 35 mA 45 IC Noise figure NF = (IC ) VCE = 3V, f = 1,8 GHz Noise figure F = (f) VCE = 3V, ZS = ZSopt 3 dB F50 2.4 2.2 NFmin F 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 mA 45 IC 6 2013-11-06 BFR360F Source impedance for min. noise figure vs. frequency VCE = 3 V +j50 +j25 +j100 +j10 2.4GHz 1.8GHz 3GHz 0 10 25 50 0.9GHz 100 4GHz 3mA 15mA -j10 -j25 -j100 -j50 7 2013-11-06 Package TSFP-3 8 BFR360F 2013-11-06 BFR360F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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