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BFR360F
3
1
2
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5 V supply voltage
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360F FBs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS ≤ 98°C
Ptot 210 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 250 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFR360F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 4 V, VBE = 0
VCE = 10 V, VBE = 0, TA = 85°C
Verified by random sampling
ICES
-
-
1
2
30
50
nA
Collector-base cutoff current
VCB = 4 V, IE = 0
ICBO - 1 30
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - 1 500
DC current gain
IC = 15 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR360F
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.32 0.5 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.4 -
Minimum noise figure
IC = 3 mA, VCE = 3 V, ZS = ZSopt,
f = 1.8 GHz
NFmin - 1 - dB
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
Gma
-
-
15.5
11
-
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
13
9
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
IP3 - 24 - dBm
1dB compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
P-1dB - 9 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR360F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
mW
240
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
Ccb
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
0 5 10 15 20 25 30 mA 40
IC
-5
0
5
10
15
20
dBm
30
IP3
6V
4V
3V
2V
1V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
GHz
17
fT
5V
3V
2V
1V
0.7V
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BFR360F
Power gain Gma, Gms = ƒ(IC)
f = 0.9GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
12
13
14
15
16
17
18
19
20
21
22
dB
24
G
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
8
10
12
14
dB
18
G
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
4
9
14
19
24
29
34
39
dB
49
G
Ic = 15mA
5V
2V
1V
0.7V
Insertion Power Gain |S21|² = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
4
8
12
16
20
24
28
dB
36
G
Ic = 15mA
5V
2V
1V
0.7V
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BFR360F
Power Gain Gma, Gms = ƒ(VCE):
|S21|² = ƒ(VCE): - - - -
f = parameter
0 1 2 3 4 5 V7
VCE
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 15mA
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter
0 5 10 15 20 25 30 35 mA 45
IC
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Noise figure NF = ƒ (IC)
VCE = 3V, f = 1,8 GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
dB
3
F
F50
NFmin
Noise figure F = ƒ(f)
VCE = 3V, ZS = ZSopt
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BFR360F
Source impedance for min.
noise figure vs. frequency
VCE = 3 V
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
3mA
15mA
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BFR360F
Package TSFP-3
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BFR360F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
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