UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc (mas) = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current Junction Temperature Storage Temperature SYMBOL VALUE UNIT VCBO VCES VEBO Pc Ic Tj TSTG 30 30 10 350 500 150 -55 ~ +150 V V V mW mA C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN BVCES ICBO IEBO hFE VCE(sat) VBE(on) fT Ic=100A,IB=0 VCB=30V,IE=0 VEB=10V,Ic=0 VCE=5V,Ic=100mA Ic=100mA,IB=0.1mA VCE=5V,Ic=100mA VCE=5V,Ic=10mA, f=100MHz 30 Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product MAX UNIT 100 100 V nA nA 10000 1.5 2.0 125 V V MHz Pulse test: Pulse Width<300s, Duty Cycle=2% UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-006,B UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Current Gain & Collector Current Saturation Voltage & Collector Current 1000k 10000 Saturation Voltage (mV) hFE I(tot) mA hFE@VCE=5V 100k 10k 0.1 1 100 10 Collector Current (mA) I(tot) mA VBE(sat)@IC=100IB 1000 VCE(sat)@IC=100IB 100 1 1000 10 1000 VBE(on)@VCE=5V 100 0.1 1 10 100 Collector Current (mA) Capacitance (pF) On Voltage (mV) I(tot) mA I(tot) mA Cutoff Frequency & Collector Current Collector Current -Ic (mA) VCE=5V 100 UTC 10 100 Collector Current (mA) 1 1000 I(tot) mA 1 Cob 1 1000 1000 10 1000 Capacitance & Reverse-Biased Voltage On Voltage & Collector Current 10000 Cutoff Frequency (MHz) 10 100 Collector Current (mA) 1000 100 10 Reverse-Biased Voltage(V) 100 Safe Operating Area I(tot) mA PT=1s PT=100ms PT=1ms 10 1 1 10 Forward Voltage-V CE(V) 100 UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-006,B UTC MMBTA13 Power-Dissipation vs Ambient Temperature 1 PD-Power Dissipation(W) NPN EPITAXIAL SILICON TRANSISTOR I(tot) mA 0.75 0.5 0.25 0 0 25 UTC 75 100 50 Temperature () 125 150 UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R206-006,B