COMMERCIAL LASERS
Key Features •35–200µmaperaturesavailable
•High-efficiency,MOCVDquantumwelldesign
•Openheatsinkpackagesandencapsulateddevices
•Highreliability
The 24xx series diode lasers represent a breakthrough in high continuous wave
(CW) optical power and ultra high brightness with unsurpassed reliability. The
small emitting aperture, combined with low beam divergence, makes the 24xx series
the highest brightness family of CW diode lasers available in the industry.
The 24xx series consists of partially coherent broad-area emitters, with relatively
uniform emission over the emitting aperture. Operation is multi-longitudinal
mode with a spectral envelope width of approximately 2 nm full width half
maximum (FWHM). The far field beam divergence in the plane perpendicular
to the P/N junction is nearly Gaussian, while the lateral beam profile exhibits a
multiple-transverse mode pattern typical of broad-area emitters. The 24xx series
offer up to 8.5 W of output from a 200 µm aperture.
The high efficiency of the quantum well structure, combined with low thermal
resistance epi-down chip mounting, provides minimum junction temperature
at high optical power. Low junction temperature and low thermal resistance
packages extend lifetime and increase reliability.
These diodes are mounted on conventional open heat sink packages and
encapsulated devices, allowing for easy integration into user systems.
Applications
•Solid-statelaserpumping
•Medical/ophthalmicapplications
•Free-spacecommunication
•Beacons/illumination
Diode Lasers, High Brightness 0.6 to 8.5 W, 8xx nm
24xx Series
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
2
Dimensions Diagrams (Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02 mm: x.x = ±0.5
x.xxx = ±0.010 x.xx = ±0.25
0.086 (2.18)
0.40 Nom. (10.0)
Protective Tab
0.157
(3.98)
0.110 (2.80)
0.025
(0.64)
0.31
(8.0)
0.125
(3.18)
0.25 (6.4)
0.06 (1.5)
Cathode
Lead ( - )
Hole, 0.09 (2.3) Dia.
Counterbore, 0.18 (4.4) Dia.
0.05 (1.2) Deep
Insulator
Stand-off
Laser
Output
Case is
anode ( + )
θ
θ
Package Style: Open Heat Sink (A)
24XX SERIES DIODE LASERS
Package Style: TO-56 Window (J1)
Pinout
Pin Description
1 Laser cathode (–)
2 Laser anode, MPD cathode
and case ground
3 Monitor photodiode anode (+)
20.17
(4.2)
0.05 (1.3)
0.14
(3.6)
0.08
(2.0)
0.04
(1.0)
0.26
(6.5)
0.14
(3.6)
0.10 (2.4)
Window: AR Coating, Both Surfaces
Thickness: 0.010 ±0.001
(0.25 ±0.03)
Laser Facet Depth
= 0.05 (1.2) Nom.
θ
θ
3
1
Laser
Output
0
1.50
1.75
2.95
3
4.50
1
2 CL OF CHIP
2 CL OF SOLDER
0.49±0.04
3




5.75
(Specifications in mm unless otherwise noted.)
Standard Tolerances
mm: x.x = ±0.5
x.xx = ±0.25
Dimensions Diagram
3
24XX SERIES DIODE LASERS
Package Style: LX Submount
4
24XX SERIES DIODE LASERS
Available Configurations 2455 series 2465 Series 2475 Series 2496 Series
A-block A-block A-block LX submount
Electro-optical Specifications
Parameter Symbol 2455-A1.2 W 2465-A 2.0 W Unit
Min. Typ. Max. Min. Typ. Max.
LaserCharacteristics
CW output power Po – – 1.2 – – 2.0 W
Mean wavelength and tolerance lc 808 (±2.5) 808 (±2.5) nm
808 (±7) 808 (±7)
Spectralwidth Dl – 2 – – 2 – nm
Slopeefficiency hd = Po/(Iop–Ith) 1.00 1.15 – 0.95 1.10 – W/A
Conversion efficiency h = Po/(IopVop) – 45 – – 45 – %
Emitting dimensions W x H – 100 x 1 – – 100 x 1 – µm
FWHM beam divergence
Parallel to junction q// – 7 11 – 7 11 degrees
Perpendicular to junction q^ – 30 33 – 30 33 degrees
90% power in angle beam divergence
Parallel to junction q//,90% 5.6 – – 5.6 – – degrees
Threshold current Ith – 0.32 0.40 – 0.65 0.75 A
Operating current Iop – 1.35 1.55 – 2.40 2.80 A
Operating voltage Vop – 1.9 2.0 – 1.8 2.0 V
Seriesresistance Rs – 0.27 – – 0.09 0.12 W
Thermal resistance Rth – 12 – – 6 – °C/W
Recommended case temperature Tc 15 – 30 15 – 30 °C
 
AbsoluteMaximumandMinimumRatings
Breakdownvoltage Vb 3 – – 3 – – V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storagetemperaturerange Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
 
Reliability(atPo,25°C)
Mean time to failure MTTF – 200,000 – – 200,000 – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
5
24XX SERIES DIODE LASERS
Electro-optical Specifications
Parameter Symbol 2475-A 3.0 W 2496-LX-8.5 W Unit
Min. Typ. Max. Min. Typ. Max.
LaserCharacteristics
CW output power Po – – 3.0 – – 8.5 W
Mean wavelength and tolerance lc 808 (±2.5) 808 (±3) nm
808 (±7) 808 (±7)
Spectralwidth Dl – 2 – – 2 – nm
Slopeefficiency hd = Po/(Iop–Ith) 0.95 1.10 – 1.05 1.12 – W/A
Conversion efficiency h = Po/(IopVop) – 45 – – 45 – %
Emitting dimensions W x H – 100 x 1 – – 200 x 1 – µm
FWHM beam divergence
Parallel to junction q// – 7 11 – 9 12 degrees
Perpendicular to junction q^ – 30 33 – 30 36 degrees
90% power in angle beam divergence
Parallel to junction q//,90% 5.6 – – – – – degrees
Threshold current Ith – 0.65 0.75 – 1.9 2.0 A
Operating current Iop – 3.40 3.90 – 10.0 10.5 A
Operating voltage Vop – 1.9 2.1 – 1.9 2.1 V
Seriesresistance Rs – 0.09 0.12 – 0.03 – W
Thermal resistance Rth – 6 – – 4.0 – °C/W
Recommended case temperature Tc 15 – 30 15 – 30 °C
 
AbsoluteMaximumandMinimumRatings
Breakdownvoltage Vb 3 – – 3 – – V
Case operating temperature Top -20 – 50 -20 – 50 °C
Storagetemperaturerange Tstg -40 – 80 -40 – 80 °C
Lead soldering temperature Tis – – 250 (5 sec.) – – 250 (5 sec.) °C
 
Reliability(atPo,25°C)
Mean time to failure MTTF – 100,000 – – 40,000 – Hr
Note:
Typical value at 25°C and 0.6 NA collection optics
6
24XX SERIES DIODE LASERS
Typical Optical Characteristics
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0
Current (A)
CW Output Power (W)
2455
Light vs. Current
2465
Light vs. Current
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
Current (A)
CW Output Power (W)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Current (A)
2475
Light vs. Current
CW Output Power (W)
Current (A)
2496
Light vs. Current
CW Output Power (W)
0 2 4 6 8 10 12
10
8
6
4
2
0
805 810 815
Far Field Energy
Distribution
Far Field Energy
Distribution
Typical Emission
Spectrum
θ (degrees) θ (degrees) Wavelength (nm)
-30-20 -10010 20 30
FWHM ~ 30 deg
-10-50
51
0
FWHM ~ 8 deg
7
24XX SERIES DIODE LASERS
Ordering Information
Formoreinformationonthisorotherproductsandtheiravailability,pleasecontactyourlocalJDSUaccountmanagerorJDSU
directlyat1-800-498-JDSU(5378)inNorthAmericaand+800-5378-JDSUworldwide,orviae-mailatcustomer.service@jdsu.com.
Sample: 24-00184
Part Number Power Emitter Width Wavelength Package
24-00184 1.2 W 100 μm 808 (± 2.5) nm 5.6 mm TO-56
24-00185 1.2 W 100 μm 808 (± 7) nm 5.6 mm TO-56
24-00141 1.2W 100μm 808(±2.5)nm OpenHeatSink“A”
24-00168 1.2W 100μm 808(±7)nm OpenHeatSink“A”
24-00144 2W 100μm 808(±2.5)nm OpenHeatSink“A”
24-00170 2W 100μm 808(±7)nm OpenHeatSink“A”
24-00147 3W 100μm 808(±2.5)nm OpenHeatSink“A”
24-00172 3W 100μm 808(±7)nm OpenHeatSink“A”
24-00180 8.5 W 200 μm 808 (± 3) nm LX submount
24-00181 8.5 W 200 μm 808 (± 7) nm LX submount
24XX SERIES DIODE LASERS
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
User Safety
SafetyandOperatingConsiderations
The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the
diode laser, into the collimated beam along its optical axis, or directly into the fiber when the device is in operation.
CAUTION:THEUSEOFOPTICALINSTRUMENTSWITHTHISPRODUCTWILLINCREASEEYEHAZARD.
Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used
with the component must be employed such that the maximum peak optical power cannot be exceeded.
CW diode lasers may be damaged by excessive drive current or switching transients. When power supplies are used, the diode
laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly
while the diode laser output power and the drive current are monitored.
Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature
is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50°C rather than 30°C.
A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator
with a thermal impedance of less than 0.5°C/W for increased reliability.
ESDPROTECTION–Electrostaticdischargeistheprimarycauseofunexpecteddiodelaserfailure.Takeextremeprecaution
topreventESD.Usewriststraps,groundedworksurfacesandrigorousantistatictechniqueswhenhandlingdiodelasers.
Labeling
21CFR1040.10Compliance
Becauseofthesmallsizeofthesedevices,eachofthelabelsshownisattachedtotheindividualshippingcontainer.Theyare
illustratedheretocomplywith21CFR1040.10asapplicableundertheRadiationControlforHealthandSafetyActof1968.
SerialNumberIdentificationLabel OutputPowerDangerLabels PackageApertureLabel
JDS Uniphase Corporation
S A N J O S E , C A L I F O R N I A 9 5 1 3 4 U. S. A.
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH:I op:
S/N:
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
3011
*SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID DIRECT
EXPOSURE TO BEAM
DANGER
GaAlAs Diode CW 3 W max.**
CLASS III B LASER PRODUCT
**Over a 40¡ Divergence Angle 3069
*SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
DANGER
GaAlAs Diode CW 8 W max.
CLASS IV LASER PRODUCT
3110
3050
Radiation
Laser
JDS Uniphase Corporation
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH: I op:
S/N:
JDS Uniphase Corporation
S A N J O S E , C A L I F O R N I A 9 5 1 3 4 U. S. A.
MODEL:
MANUFACTURED:
This laser product complies with 21 CFR 1040 as applicable
WAVELENGTH:I op:
S/N:
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
INVISIBLE LASER
RADIATION IS EMIT-
TED AS SHOWN.
DANGER
3011
*SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID DIRECT
EXPOSURE TO BEAM
DANGER
GaAlAs Diode CW 3 W max.**
CLASS III B LASER PRODUCT
**Over a 40¡ Divergence Angle 3069 *SEE MANUAL
INVISIBLE LASER RADIATION*
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
DANGER
GaAlAs Diode CW 8 W max.
CLASS IV LASER PRODUCT
3110
3050
Radiation
Laser
A Package Diodes2455 Series
2465 Series
2475 Series
2496 Series
Productspecificationsanddescriptionsinthisdocumentsubjecttochangewithoutnotice.©2011JDSUniphaseCorporation10127871013101124XXDIODELASER.DS.CL.AEDecember2011