M29W320EB70ZE6F - MICRON TECHNOLOGY

May 2009 Rev 9 1/65

M29W320ET

M29W320EB

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)

3V supply Flash memory

Features

Supply voltage

–V

CC = 2.7V to 3.6V for Program, Erase and

Read

–V

PP =12V for Fast Program (optional)

Access times: 70, 90ns

Programming time

–10μs per byte/word typical

– Double word/ Quadruple byte Program

Memory Blocks

– Memory Array: 63 Main Blocks

– 8 Parameter Blocks (Top or Bottom

Location)

Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

Unlock Bypass Program command

– Faster Production/Batch Programming

VPP/WP pin for fast Program and Write Protect

Temporary Block Unprotection mode

Common Flash Interface

– 64 bit Security code

Extended memory Block

– Extra block used as security block or to

store additional information

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Top Device code M29W320ET: 2256h

– Bottom Device code M29W320EB: 2257h

RoHS® packages available

FBGA BGA

TSOP48 (N)

12 x 20 mm

TFBGA48 (ZE)

6 x 8 mm

FBGA64 (ZS)

11 x 13 mm

www.numonyx.com

Contents M29W320ET, M29W320EB
2/65   
Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1 Address Inputs (A0-A20)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
2 Data Inputs/Outputs (DQ0-DQ7)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
3 Data Inputs/Outputs (DQ8-DQ14)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
4 Data Input/Output or Address Input (DQ15A–1)   . . . . . . . . . . . . . . . . . . .  14
5 Chip Enable (E)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
6 Output Enable (G)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
7 Write Enable (W)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
8 VPP/Write Protect (VPP/WP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
9 Reset/Block Temporary Unprotect (RP)  . . . . . . . . . . . . . . . . . . . . . . . . . .  15
10 Ready/Busy Output (RB)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
11 Byte/word Organization Select (BYTE)   . . . . . . . . . . . . . . . . . . . . . . . . . .  16
12 VCC Supply voltage   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
13 VSS Ground   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
Bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1 Bus Read  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
2 Bus Write  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
3 Output Disable  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
4 Standby   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
5 Automatic Standby  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
6 Special bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
6.1 Electronic signature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2 Block Protect and Chip Unprotect  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
1 Read/Reset command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
2 Auto Select command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
3 Read CFI Query command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  22
4 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  22

M29 W320ET , M29W320EB Con tents
 3/65
5 Fast Program commands  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  23
5.1 Quadruple byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.2 Double word Program command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
7 Unlock Bypass Program command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
8 Unlock Bypass Reset command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
9 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
10 Block Erase command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
11 Erase Suspend command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25
12 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
13 Enter Extended Block command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
14 Exit Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
15 Block Protect and Chip Unprotect commands  . . . . . . . . . . . . . . . . . . . . .  26
Status register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
1 Data Polling bit (DQ7)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30
2 Toggle bit (DQ6)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30
3 Error bit (DQ5)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  31
4 Erase Timer bit (DQ3)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  31
5 Alternative Toggle bit (DQ2)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  31
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
DC and ac parameters   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Part numbering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Appendix A Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Ap pe n d ix  B C ommon  Fla s h  In t e r f ace  (CFI ) . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . 52
Appendix C Extended memory Block. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
1 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  56
2 Customer Lockable Extended Block   . . . . . . . . . . . . . . . . . . . . . . . . . . . .  56

Contents M29W320ET, M29W320EB

4/65

Appendix D Block Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

D.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

D.2 In-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

M29 W320ET , M29W320EB List of tables
 5/65
List of tables
Table 1. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2. Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 3. Bus operations, BYTE = VIH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 5. Commands, 8-bit mode, BYTE = VIL  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 6. Program, Erase times and Program, Erase Endurance cycles. . . . . . . . . . . . . . . . . . . . . . 29
Table 7. Status register bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 8. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 9. Operating and ac measurement conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 10. Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 11. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 12. Read ac characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 13. Write ac characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 14. Write ac characteristics, Chip Enable controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 15. Toggle and alternative Toggle bits ac characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 16. Reset/Block Temporary Unprotect ac characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, package mechanical data . . . . . . . 43
Table 18. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, package mechanical data. . . . . . . . . . . 44
Table 19. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data  . . . 45
Table 20. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 21. Top Boot Block Addresses, M29W320ET  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 22. Bottom Boot Block Addresses, M29W320EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 23. Query Structure Overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 24. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 25. CFI Query System Interface Information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 26.  Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 27. Primary Algorithm-specific extended Query table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Table 28. Security code area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 29. Extended Block Address and data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 30. Programmer technique Bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 31. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

List o f figu res M29 W320 ET, M29 W320EB
6/65   
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 2. TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 3. TFBGA48 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4. FBGA64 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 5. Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. Data Polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 8. Toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 9. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 10. AC measurement Load circuit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 11. Read mode ac waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 12. Write ac waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 13. Write ac waveforms, Chip Enable controlled  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 14. Toggle and alternative Toggle bits mechanism, Chip Enable controlled  . . . . . . . . . . . . . . 41
Figure 15. Toggle and alternative Toggle bits mechanism, Output Enable controlled. . . . . . . . . . . . . 41
Figure 16. Reset/Block Temporary Unprotect ac waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 17. Accelerated Program Timing waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 18. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm package outline, top view. . . . . . . . 43
Figure 19. TFBGA48 6x8mm-6x8 Ball Array, 0.8mm Pitch, package outline, bottom view . . . . . . . . . 44
Figure 20. FBGA64 11 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package outline, bottom view . 45
Figure 21. Programmer Equipment Group Protect flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 22. Programmer Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 23. In-system Equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 24. In-system Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

M29 W320ET , M29W32 0E B Descri ption

7/65

1 Description

The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read,

erased and reprogrammed. These operations can be performed using a single low voltage

(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The device features an asymmetrical block architecture. The M29W320E has an array of 8

parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the

memory address space while the M29W320EB locates the Parameter Blocks starting from

the bottom.

M29W320E has an extra 32 Kword (x16 mode) or 64 Kbyte (x8 mode) block, the Extended

Block, that can be accessed using a dedicated command. The Extended Block can be

protected and so is useful for storing security information. However the protection is

irreversible, once protected the protection cannot be undone.

Each block can be erased independently so it is possible to preserve valid data while old

data is erased. The blocks can be protected to prevent accidental Program or Erase

commands from modifying the memory. Program and Erase commands are written to the

Command interface of the memory. An on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by taking care of all of the special

operations that are required to update the memory contents. The end of a program or erase

operation can be detected and any error conditions identified. The command set required to

control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The memory is offered in TSOP48 (12x20mm), and TFBGA48 (6x8mm, 0.8mm pitch)

packages. In order to meet environmental requirements, Numonyx offers the M29W320E in

RoHS packages, which are are Lead-free. The category of second Level Interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard

JESD97. The maximum ratings related to soldering conditions are also marked on the inner

box label.

The memory is supplied with all the bits erased (set to ’1’).

Description M29W320ET, M29W320EB

8/65

Figure 1. Logic diagram

Table 1. Signal n ames

A0-A20 Address Inputs

DQ0-DQ7 Data Inputs/Outputs

DQ8-DQ14 Data Inputs/Outputs

DQ15A–1 Data Input/Output or Address Input

EChip Enable

GOutput Enable

WWrite Enable

RP Reset/Block Temporary Unprotect

RB Ready/Busy Output

BYTE Byte/word Organization Select

VCC Supply voltage

VPP/WP VPP/Write Protect

VSS Ground

NC Not Connected Internally

AI09346

A0-A20

DQ0-DQ14

VCC

M29W320ET

M29W320EB

VSS

DQ15A–1

BYTE

VPP/WP

M29 W320ET , M29W32 0E B Descri ption

9/65

Figure 2. TSO P connec tions

DQ3

DQ9

DQ2

A6 DQ0

DQ6

A9 DQ13

A17

A10 DQ14

DQ12

DQ10

DQ15A–1

VCC

DQ4

DQ5

DQ7

VPP/WP

AI09347

M29W320ET

M29W320EB

24 25

DQ8

A20

A19

A18

DQ1

DQ11

A12

A13

A16

A11

BYTE

A15

A14 VSS

VSS

Description M29W320ET, M29W320EB

10/65

Figure 3. TFBGA 48 conne ctions (top view through package)

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP

DQ1

DQ9

DQ8

DQ0

A17

DQ2

DQ6

DQ13

DQ14

A10

DQ4

VCC

DQ12

DQ5

A19

A11

DQ7

VSS

A5 A20

A16

BYTE

DQ15

A–1

AI08084

M29 W320ET , M29W32 0E B Descri ption

11/65

Figure 4. FBGA 64 conne ctions (top view through pa cka ge)

654321

VSS

A15

A14

A12

A13

DQ3

DQ11

DQ10

A18

VPP

DQ1

DQ9

DQ8

DQ0

A17

DQ2

DQ6

DQ13

DQ14

A10

DQ4

VCC

DQ12

DQ5

A19

A11

DQ7

VSS

A5 A20

A16

BYTE

DQ15

A–1

AI12719_bis

VCC

VSS

VCC

Description M29W320ET, M29W320EB

12/65

Fig u re 5. Bl o ck Addr esse s (x8)

1. See also Appendix A: Block Addresses, Table 21 and Table 22 for a full listing of the Block Addresses.

AI0934

64 KByte or

32 KWord

000000h

00FFFFh

64 KByte or

32 KWord

3E0000h

3EFFFFh

Top Boot Block (x8)

Address lines A20-A0, DQ15A-1

64 KByte or

32 KWord

2F0000h

2FFFFFh

64 KByte or

32 KWord

300000h

30FFFFh

8 KByte or

4 KWord

3FE000h

3FFFFFh

8 KByte or

4 KWord

3F0000h

3F1FFFh

Total of 63

Main Blocks

Total of 8

Parameter

Blocks

(1)

8 KByte or

4 KWord

000000h

001FFFh

64 KByte or

32 KWord

0F0000h

0FFFFFh

Bottom Boot Block (x8)

Address lines A20-A0, DQ15A-1

8 KByte or

4 KWord

00E000h

00FFFFh

Total of 8

Parameter

Blocks

(1)

64 KByte or

32 KWord

010000h

01FFFFh

64 KByte or

32 KWord

3F0000h

3FFFFFh

64 KByte or

32 KWord

100000h

10FFFFh

Total of 63

Main Blocks

Note 1. Used as Extended Block Addresses in Extended Block mode.

M29 W320ET , M29W32 0E B Descri ption

13/65

Fig u re 6. Bl o ck Addr esse s (x16)

1. See also Appendix A: Block Addresses, Table 21 and Table 22 for a full listing of the Block Addresses.

AI09349

64 KByte or

32 KWord

000000h

007FFFh

64 KByte or

32 KWord

1F0000h

1F7FFFh

Top Boot Block (x16)

Address lines A20-A0

64 KByte or

32 KWord

178000h

17FFFFh

64 KByte or

32 KWord

180000h

187FFFh

8 KByte or

4 KWord

1FF000h

1FFFFFh

8 KByte or

4 KWord

1F8000h

1F8FFFh

Total of 63

Main Blocks

Total of 8

Parameter

Blocks

(1)

8 KByte or

4 KWord

000000h

000FFFh

64 KByte or

32 KWord

078000h

07FFFFh

Bottom Boot Block (x16)

Address lines A20-A0

8 KByte or

4 KWord

007000h

007FFFh

Total of 8

Parameter

Blocks

(1)

64 KByte or

32 KWord

008000h

00FFFFh

64 KByte or

32 KWord

1F8000h

1FFFFFh

64 KByte or

32 KWord

080000h

087FFFh

Total of 63

Main Blocks

Note 1. Used as Extended Block Addresses in Extended Block mode.

Si gnal descri pt i o n s M2 9W320E T, M2 9W320E B

14/65

2 Signal descriptions

See Figure 1: Lo gi c diagr am, and Ta bl e 1: S i gnal nam es, for a brief overview of the signals

connected to this device.

2.1 Address Inputs (A0-A20)

The Address Inputs select the cells in the memory array to access during Bus Read

operations. During Bus Write operations they control the commands sent to the Command

interface of the Program/Erase Controller.

2.2 Data Inputs /Outputs (DQ0-DQ7)

The Data I/O outputs the data stored at the selected address during a Bus Read operation.

During Bus Write operations they represent the commands sent to the Command interface

of the Program/Erase Controller.

2.3 Data Inputs/Outputs (DQ8-DQ14)

The Data I/O outputs the data stored at the selected address during a Bus Read operation

when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high

impedance. During Bus Write operations the Command Register does not use these bits.

When reading the Status register these bits should be ignored.

2.4 Data Input/Output or Address Input (DQ15A–1)

When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).

When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the

LSB of the addressed word, DQ15A–1 High will select the MSB. Throughout the text

consider references to the Data Input/Output to include this pin when BYTE is High and

references to the Address Inputs to include this pin when BYTE is Low except when stated

explicitly otherwise.

2.5 Chip Enable (E)

The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to

be performed. When Chip Enable is High, VIH, all other pins are ignored.

2.6 Output Enable (G)

The Output Enable, G, controls the Bus Read operation of the memory.

M29 W320ET , M 29W32 0EB Sig n al des cri p tion s

15/65

2.7 Write Enable (W)

The Write Enable, W, controls the Bus Write operation of the memory’s Command interface.

2.8 VPP/Write Pro tect (VPP/WP)

The VPP/Write Protect pin provides two functions. The VPP function allows the memory to

use an external high voltage power supply to reduce the time required for Program

operations. This is achieved by bypassing the unlock cycles and/or using the Double word

or Quadruple byte Program commands.

The Write Protect function provides a hardware method of protecting the two outermost boot

blocks. When VPP/Write Protect is Low, VIL, the memory protects the two outermost boot

blocks; Program and Erase operations in these blocks are ignored while VPP/Write Protect

is Low, even when RP is at VID.

When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status

of the two outermost boot blocks. Program and Erase operations can now modify the data

in these blocks unless the blocks are protected using Block Protection.

When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock

Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes.

During Unlock Bypass Program operations the memory draws IPP from the pin to supply the

programming circuits. See the description of the Unlock Bypass command in the Command

interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than

tVHVPP

, see Figure 17

Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the

memory may be left in an indeterminate state.

The VPP/Write Protect pin must not be left floating or unconnected or the device may

become unreliable. A 0.1μF capacitor should be connected between the VPP/Write Protect

pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB

track widths must be sufficient to carry the currents required during Unlock Bypass Program,

IPP

2.9 Reset/Block Temporary Unprotect (RP)

The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the

memory or to temporarily unprotect all Blocks that have been protected.

Note that if VPP/WP is at VIL, then the two outermost boot blocks will remain protected even

if RP is at VID.

A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at

least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be

ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.

See the Ready/Busy Output section, Table 16 and Figure 16: Reset/Block Temporary

Unprotect ac waveforms, for more details.

Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program

and Erase operations on all blocks will be possible. The transition from VIH to VID must be

slower than tPHPHH.

Si gnal descri pt i o n s M2 9W320E T, M2 9W320E B

16/65

2.10 Ready/Busy Output (RB)

The Ready/Busy pin is an open-drain output that can be used to identify when the device is

performing a Program or Erase operation. During Program or Erase operations Ready/Busy

is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and

Erase Suspend mode.

After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy

becomes high-impedance. See Table 16 and Figure 16: R eset/ Bl ock Tem po rary Unprote c t

ac waveforms.

The use of an open-drain output allows the Ready/Busy pins from several memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

2.11 Byte/word Organization Select (BYTE)

The byte/word Organization Select pin is used to switch between the x8 and x16 Bus modes

of the memory. When byte/word Organization Select is Low, VIL, the memory is in x8 mode,

when it is High, VIH, the memory is in x16 mode.

2.12 VCC Supply voltage

VCC provides the power supply for all operations (Read, Program and Erase).

The Command interface is disabled when the VCC Supply voltage is less than the Lockout

voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data

during power up, power down and power surges. If the Program/Erase Controller is

programming or erasing during this time then the operation aborts and the memory contents

being altered will be invalid.

A 0.1μF capacitor should be connected between the VCC Supply voltage pin and the VSS

Ground pin to decouple the current surges from the power supply. The PCB track widths

must be sufficient to carry the currents required during Program and Erase operations, ICC3.

2.13 VSS Ground

VSS is the reference for all voltage measurements. The device features two VSS pins which

must be both connected to the system ground.

M29 W320ET , M29W320EB Bus o p erat ions

17/65

3 Bus operations

There are five standard bus operations that control the device. These are Bus Read, Bus

Write, Output Disable, Standby and Automatic Standby.

See Table 2 and Table 3, Bus operations, for a summary. Typically glitches of less than 5ns

on Chip Enable or Write Enable are ignored by the memory and do not affect bus

operations.

3.1 Bus Read

Bus Read operations read from the memory cells, or specific registers in the Command

interface. A valid Bus Read operation involves setting the desired address on the Address

Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write

Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 11: Read mode

ac waveforms, and Table 12: Read ac characteristics, for details of when the output

becomes valid.

3.2 Bus Write

Bus Write operations write to the Command interface. A valid Bus Write operation begins by

setting the desired address on the Address Inputs. The Address Inputs are latched by the

Command interface on the falling edge of Chip Enable or Write Enable, whichever occurs

last. The Data Inputs/Outputs are latched by the Command interface on the rising edge of

Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,

during the whole Bus Write operation. See Figure 12 and Figure 13, Write ac waveforms,

and Table 13 and Table 14, Write ac characteristics, for details of the timing requirements.

3.3 Output Disable

The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.

3.4 Standby

When Chip Enable is High, VIH, the memory enters Standby mode and the Data

Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply current to

the Standby Supply current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the

Standby current level see Table 11: DC characteri stic s.

During program or erase operations the memory will continue to use the Program/Erase

Supply current, ICC3, for Program or Erase operations until the operation completes.

Bus operations M29W320ET, M29W320EB

18/65

3.5 Automatic Standby

If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or

more the memory enters Automatic Standby where the internal Supply current is reduced to

the Standby Supply current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read

operation is in progress.

3.6 Special bus operations

Additional bus operations can be performed to read the Electronic signature and also to

apply and remove Block Protection. These bus operations are intended for use by

programming equipment and are not usually used in applications. They require VID to be

applied to some pins.

3.6.1 Electronic signature

The memory has two codes, the manufacturer code and the device code, that can be read

to identify the memory. These codes can be read by applying the signals listed in Table 2

and Table 3, Bus operations.

3.6.2 Block Protect and Chip Unprotect

Groups of blocks can be protected against accidental Program or Erase. The Protection

groups are shown in Append i x A: Blo ck Ad dres ses, Table 21 and Table 22, Block

Addresses. The whole chip can be unprotected to allow the data inside the blocks to be

changed.

The VPP/Write Protect pin can be used to protect the two outermost boot blocks. When

VPP/Write Protect is at VIL the two outermost boot blocks are protected and remain

protected regardless of the Block Protection Status or the Reset/Block Temporary

Unprotect pin status.

Block Protect and Chip Unprotect operations are described in Appendix D: Block Protection.

M29 W320ET , M29W320EB Bus o p erat ions

19/65

Table 2. Bus operations, BYTE = VIL(1)

Operation E G W Address Input s

DQ15A–1, A0-A2 0

Data Inputs/Outputs

DQ14-

DQ8 DQ7-DQ0

Bus Read VIL VIL VIH Cell Address Hi-Z Data Output

Bus Write VIL VIH VIL Command Address Hi-Z Data Input

Output Disable X VIH VIH X Hi-Z Hi-Z

Standby VIH X X X Hi-Z Hi-Z

Read Manufacturer

code VIL VIL VIH

A0 = VIL, A1 = VIL, A9 = VID,

Others VIL or VIH

Hi-Z 20h

Read Device code VIL VIL VIH

A0 = VIH, A1 = VIL,

A9 = VID, Others VIL or VIH

Hi-Z 56h (M29W320ET)

57h (M29W320EB)

Extended memory

Block Verify code VIL VIL VIH

A0 = VIH, A1 = VIH, A6 = VIL,

A9 = VID, Others VIL or VIH

Hi-Z 81h (factory locked)

01h (factory unlocked)

1. X = VIL or VIH.

Bus operations M29W320ET, M29W320EB

20/65

Table 3. Bus operations, BYTE = VIH(1)

Operation E G W Address Inputs

A0-A20 Data Inputs/ Outputs

DQ15A–1, DQ14-DQ0

Bus Read VIL VIL VIH Cell Address Data Output

Bus Write VIL VIH VIL Command Address Data Input

Output Disable X VIH VIH X Hi-Z

Standby VIH X X X Hi-Z

Read Manufacturer

code VIL VIL VIH

A0 = VIL, A1 = VIL, A9 = VID,

Others VIL or VIH

0020h

Read Device code VIL VIL VIH

A0 = VIH, A1 = VIL, A9 = VID,

Others VIL or VIH

2256h (M29W320ET)

2257h (M29W320EB)

Extended memory

Block Verify code VIL VIL VIH

A0 = VIH, A1 = VIH, A6 = VIL,

A9 = VID, Others VIL or VIH

81h (factory locked)

01h (factory unlocked)

1. X = VIL or VIH.

M29 W320ET , M 29W32 0EB Comm and interf ace

21/65

4 Command interface

All Bus Write operations to the memory are interpreted by the Command interface.

Commands consist of one or more sequential Bus Write operations. Failure to observe a

valid sequence of Bus Write operations will result in the memory returning to Read mode.

The long command sequences are imposed to maximize data security.

The address used for the commands changes depending on whether the memory is in 16-

bit or 8-bit mode. See either Table 4, or Table 5, depending on the configuration that is being

used, for a summary of the commands.

4.1 Read/Reset command

The Read/Reset command returns the memory to its Read mode. It also resets the errors in

the Status register. Either one or three Bus Write operations can be used to issue the

Read/Reset command.

The Read/Reset command can be issued, between Bus Write cycles before the start of a

program or erase operation, to return the device to read mode. If the Read/Reset command

is issued during the time-out of a Block erase operation then the memory will take up to

10μs to abort. During the abort period no valid data can be read from the memory. The

Read/Reset command will not abort an Erase operation when issued while in Erase

Suspend.

4.2 Auto Select command

The Auto Select command is used to read the Manufacturer code, the Device code, the

Block Protection Status and the Extended memory Block Verify code. Three consecutive

Bus Write operations are required to issue the Auto Select command. The memory remains

in Auto Select mode until a Read/Reset or CFI Query command is issued.

In Auto Select mode the Manufacturer code can be read using a Bus Read operation with

A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH.

The Device code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The

other address bits may be set to either VIL or VIH.

The Block Protection Status of each block can be read using a Bus Read operation with A0

= VIL, A1 = VIH and A12-A20 specifying the block address. The other address bits may be

set to either VIL or VIH. If the addressed block is protected then 01h is output on Data

Inputs/Outputs DQ0-DQ7, otherwise 00h is output.

Co m mand interface M29W32 0ET, M29W320E B

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4.3 Read CFI Query command

The Read CFI Query Command is used to read data from the Common Flash Interface

(CFI) memory Area. This command is valid when the device is in the Read Array mode, or

when the device is in Auto Select mode.

One Bus Write cycle is required to issue the Read CFI Query Command. Once the

command is issued subsequent Bus Read operations read from the Common Flash

Interface memory Area.

The Read/Reset command must be issued to return the device to the previous mode (the

Read Array mode or Auto Select mode). A second Read/Reset command would be needed

if the device is to be put in the Read Array mode from Auto Select mode.

See Appendix B : Common Flas h Interfa ce (CFI), Table 23, Table 24, Table 25, Table 26,

Table 27 and Table 28 for details on the information contained in the Common Flash

Interface (CFI) memory area.

4.4 Program command

The Program command can be used to program a value to one address in the memory

array at a time. The command requires four Bus Write operations, the final write operation

latches the address and data, and starts the Program/Erase Controller.

If the address falls in a protected block then the Program command is ignored, the data

remains unchanged. The Status register is never read and no error condition is given.

During the program operation the memory will ignore all commands. It is not possible to

issue any command to abort or pause the operation. After programming has started, Bus

Read operations output the Status register content. See Sect i on 5: Status regi ster for more

details. Typical program times are given in Table 6

After the program operation has completed the memory will return to the Read mode, unless

an error has occurred. When an error occurs Bus Read operations will continue to output

the Status register. A Read/Reset command must be issued to reset the error condition and

return to Read mode.

Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase

Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.

M29 W320ET , M 29W32 0EB Comm and interf ace

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4.5 Fast Program commands

There are two Fast Program commands available to improve the programming throughput,

by writing several adjacent words or bytes in parallel. The Quadruple byte Program

command is available for x8 operations, while the Double word Program command is

available for x16 operations.

Fast Program commands should not be attempted when VPP/WP is not at VPP

. Care must

be taken because applying a 12V VPP voltage to the VPP/WP pin will temporarily unprotect

any protected block.

After programming has started, Bus Read operations output the Status register content.

After the program operation has completed the memory will return to the Read mode, unless

an error has occurred. When an error occurs Bus Read operations will continue to output

the Status register. A Read/Reset command must be issued to reset the error condition and

return to Read mode.

Note that the Fast Program commands cannot change a bit set at ’0’ back to ’1’. One of the

Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’

to ’1’.

Typical Program times are given in Table 6: Progr am , Erase times and Program , Eras e

Endurance cycles

4.5.1 Quadruple byte Program command

The Quadruple byte Program command is used to write a page of four adjacent bytes in

parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles

are necessary to issue the Quadruple byte Program command.

1. The first bus cycle sets up the Quadruple byte Program command.

2. The second bus cycle latches the Address and the Data of the first byte to be written.

3. The third bus cycle latches the Address and the Data of the second byte to be written.

4. The fourth bus cycle latches the Address and the Data of the third byte to be written.

5. The fifth bus cycle latches the Address and the Data of the fourth byte to be written and

starts the Program/Erase Controller.

4.5.2 Double word Program command

The Double word Program command is used to write a page of two adjacent words in

parallel. The two words must differ only for the address A0.

Three bus write cycles are necessary to issue the Double word Program command.

1. The first bus cycle sets up the Double word Program command.

2. The second bus cycle latches the Address and the Data of the first word to be written.

3. The third bus cycle latches the Address and the Data of the second word to be written

and starts the Program/Erase Controller.

Co m mand interface M29W32 0ET, M29W320E B

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4.6 Unlock Bypass command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program

command to program the memory faster than with the standard program commands. When

the cycle time to the device is long, considerable time saving can be made by using these

commands. Three Bus Write operations are required to issue the Unlock Bypass command.

Once the Unlock Bypass command has been issued the memory enters Unlock Bypass

mode. The Unlock Bypass Program command can then be issued to program addresses or

the Unlock Bypass Reset command can be issued to return to Read mode. In Unlock

Bypass mode the memory can be read as if in Read mode.

When VPP is applied to the VPP/Write Protect pin the memory automatically enters the

Unlock Bypass mode and the Unlock Bypass Program command can be issued

immediately. Care must be taken because applying a 12V VPP voltage to the VPP/WP pin

will temporarily unprotect any protected block.

4.7 Unlock Bypass Program command

The Unlock Bypass Program command can be used to program one address in the memory

array at a time. The command requires two Bus Write operations, the final write operation

latches the address and data, and starts the Program/Erase Controller.

The Program operation using the Unlock Bypass Program command behaves identically to

the Program operation using the Program command. The operation cannot be aborted, a

Bus Read operation outputs the Status register. See the Program command for details on

the behavior.

4.8 Unlock Bypass Reset comm and

The Unlock Bypass Reset command can be used to return to Read/Reset mode from

Unlock Bypass mode. Two Bus Write operations are required to issue the Unlock Bypass

Reset command. Read/Reset command does not exit from Unlock Bypass mode.

4.9 Chip Erase command

The Chip Erase command can be used to erase the entire chip. Six Bus Write operations

are required to issue the Chip Erase Command and start the Program/Erase Controller.

If any blocks are protected then these are ignored and all the other blocks are erased. If all

of the blocks are protected the Chip Erase operation appears to start but will terminate

within about 100μs, leaving the data unchanged. No error condition is given when protected

blocks are ignored.

During the erase operation the memory will ignore all commands, including the Erase

Suspend command. It is not possible to issue any command to abort the operation. Typical

chip erase times are given in Table 6. All Bus Read operations during the Chip Erase

operation will output the Status register on the Data Inputs/Outputs. See the section on the

Status register for more details.

After the Chip Erase operation has completed the memory will return to the Read mode,

unless an error has occurred. When an error occurs the memory will continue to output the

M29 W320ET , M 29W32 0EB Comm and interf ace

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Status register. A Read/Reset command must be issued to reset the error condition and

return to Read mode.

The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All

previous data is lost.

4.10 Block Erase command

The Block Erase command can be used to erase a list of one or more blocks. It sets all of

the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is

lost.

Six Bus Write operations are required to select the first block in the list. Each additional

block in the list can be selected by repeating the sixth Bus Write operation using the address

of the additional block. The Block Erase operation starts the Program/Erase Controller after

a time-out period of 50μs after the last Bus Write operation. Once the Program/Erase

Controller starts it is not possible to select any more blocks. Each additional block must

therefore be selected within 50μs of the last block. The 50μs timer restarts when an

additional block is selected. After the sixth Bus Write operation a Bus Read operation will

output the Status register. See the Status register section for details on how to identify if the

Program/Erase Controller has started the Block Erase operation.

If any selected blocks are protected then these are ignored and all the other selected blocks

are erased. If all of the selected blocks are protected the Block Erase operation appears to

start but will terminate within about 100μs, leaving the data unchanged. No error condition is

given when protected blocks are ignored.

During the Block Erase operation the memory will ignore all commands except the Erase

Suspend command and the Read/Reset command which is only accepted during the 50μs

time-out period. Typical block erase times are given in Table 6.

After the Erase operation has started all Bus Read operations will output the Status register

on the Data Inputs/Outputs. See the section on the Status register for more details.

After the Block Erase operation has completed the memory will return to the Read mode,

unless an error has occurred. When an error occurs Bus Read operations will continue to

output the Status register. A Read/Reset command must be issued to reset the error

condition and return to Read mode.

4.11 Erase Suspend command

The Erase Suspend Command may be used to temporarily suspend a Block Erase

operation and return the memory to Read mode. The command requires one Bus Write

operation.

The Program/Erase Controller will suspend within the Erase Suspend Latency time of the

Erase Suspend Command being issued. Once the Program/Erase Controller has stopped

the memory will be set to Read mode and the Erase will be suspended. If the Erase

Suspend command is issued during the period when the memory is waiting for an additional

block (before the Program/Erase Controller starts) then the Erase is suspended immediately

and will start immediately when the Erase Resume Command is issued. It is not possible to

select any further blocks to erase after the Erase Resume.

Co m mand interface M29W32 0ET, M29W320E B

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During Erase Suspend it is possible to Read and Program cells in blocks that are not being

erased; both Read and Program operations behave as normal on these blocks. If any

attempt is made to program in a protected block or in the suspended block then the Program

command is ignored and the data remains unchanged. The Status register is not read and

no error condition is given. Reading from blocks that are being erased will output the Status

It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands

during an Erase Suspend. The Read/Reset command must be issued to return the device to

Read Array mode before the Resume command will be accepted.

During Erase Suspend a Bus Read operation to the Extended Block will output the

Extended Block data.

4.12 Erase Resume command

The Erase Resume command must be used to restart the Program/Erase Controller after an

Erase Suspend. The device must be in Read Array mode before the Resume command will

be accepted. An erase can be suspended and resumed more than once.

4.13 Ente r Exten ded Blo ck comm and

The M29W320E has an extra 64Kbyte block (Extended Block) that can only be accessed

using the Enter Extended Block command. Three Bus write cycles are required to issue the

Extended Block command. Once the command has been issued the device enters

Extended Block mode where all Bus Read or Program operations to the Boot Block

addresses access the Extended Block. The Extended Block (with the same address as the

boot block) cannot be erased, and can be treated as one-time programmable (OTP)

memory. In Extended Block mode the Boot Blocks are not accessible.

To exit from the Extended Block mode the Exit Extended Block command must be issued.

The Extended Block can be protected, however once protected the protection cannot be

undone.

4.14 Exit Extended Block command

The Exit Extended Block command is used to exit from the Extended Block mode and return

the device to Read mode. Four Bus Write operations are required to issue the command.

4.15 Block Pro tect and Chip Unprot ect comm ands

Groups of blocks can be protected against accidental Program or Erase. The Protection

groups are shown in Append i x A: Blo ck Ad dres ses, Table 21 and Table 22, Block

Addresses. The whole chip can be unprotected to allow the data inside the blocks to be

changed.

Block Protect and Chip Unprotect operations are described in Appendix D: Block Protection.

M29 W320ET , M 29W32 0EB Comm and interf ace

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Table 4. Comm ands , 16-bit mode , BYTE = VIH(1)(2)

Command

Length

Bus Write operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset 1X F0

3555 AA2AA 55 X F0

Auto Select 3 555 AA 2AA 55 (BA)

555 90

Program 4 555 AA 2AA 55 555 A0 PA PD

Double word Program 3 555 50 PA0 PD0 PA1 PD1

Unlock Bypass 3 555 AA 2AA 55 555 20

Unlock Bypass

Program 2X A0PAPD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Erase Suspend 1 BA B0

Erase Resume 1 BA 30

Read CFI Query 1 55 98

Enter Extended Block 3 555 AA 2AA 55 555 88

Exit Extended Block 4 555 AA 2AA 55 555 90 X 00

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal.

2. The Command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15

are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Co m mand interface M29W32 0ET, M29W320E B

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Table 5. Comm ands , 8-bit mode, BYTE = VIL(1)(2)

Command

Length

Bus Write operations

1st 2nd 3rd 4th 5th 6th

Add Data Add Data Add Data Add Data Add Data Add Data

Read/Reset 1X F0

3 AAA AA 555 55 X F0

Auto Select 3 AAA AA 555 55 (BA)

AAA 90

Program 4 AAA AA 555 55 AAA A0 PA PD

Quadruple byte Program 5 AAA 55 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3

Unlock Bypass 3 AAA AA 555 55 AAA 20

Unlock Bypass Program 2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Erase Suspend 1 BA B0

Erase Resume 1 BA 30

Read CFI Query 1 AA 98

Enter Extended Block 3 AAA AA 555 55 AAA 88

Exit Extended Block 4 AAA AA 555 55 AAA 90 X 00

1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal.

2. The Command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15

are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

M29 W320ET , M 29W32 0EB Comm and interf ace

29/65

Table 6. Program, Erase times and Progra m , Erase Endurance cycles

Parameter Min Typ(1)(2) Max(2) Unit

Chip Erase 40 200(3) s

Block Erase (64 Kbytes) 0.8 6(3) s

Erase Suspend Latency time 50(4) μs

Program (byte or word) 10 200(4) μs

Double word Program (byte or word) 10 200(3) μs

Chip Program (byte by byte) 40 200(3) s

Chip Program (word by word) 20 100(3) s

Chip Program (Quadruple byte or Double word) 10 100(3) s

Program/Erase Cycles (per Block) 100,000 cycles

Data Retention 20 years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

Status register M29W320ET, M29W320EB

30/65

5 Status register

The M29W320E has one Status register. It provides information on the current or previous

Program or Erase operations. The various bits convey information and errors on the

operation. Bus Read operations from any address, always read the Status register during

Program and Erase operations. It is also read during Erase Suspend when an address

within a block being erased is accessed.

The bits in the Status register are summarized in Table 7: Status reg ist er bits.

5.1 Data Polling bit (DQ7)

The Data Polling bit can be used to identify whether the Program/Erase Controller has

successfully completed its operation or if it has responded to an Erase Suspend. The Data

Polling bit is output on DQ7 when the Status register is read.

During Program operations the Data Polling bit outputs the complement of the bit being

programmed to DQ7. After successful completion of the Program operation the memory

returns to Read mode and Bus Read operations from the address just programmed output

DQ7, not its complement.

During Erase operations the Data Polling bit outputs ’0’, the complement of the erased state

of DQ7. After successful completion of the Erase operation the memory returns to Read

mode.

In Erase Suspend mode the Data Polling bit will output a ’1’ during a Bus Read operation

within a block being erased. The Data Polling bit will change from a ’0’ to a ’1’ when the

Program/Erase Controller has suspended the Erase operation.

Figure 7: Data Polling flowchart, gives an example of how to use the Data Polling bit. A Valid

Address is the address being programmed or an address within the block being erased.

5.2 Togg le bit (DQ6)

The Toggle bit can be used to identify whether the Program/Erase Controller has

successfully completed its operation or if it has responded to an Erase Suspend. The Toggle

bit is output on DQ6 when the Status register is read.

During Program and Erase operations the Toggle bit changes from ’0’ to ’1’ to ’0’, etc., with

successive Bus Read operations at any address. After successful completion of the

operation the memory returns to Read mode.

During Erase Suspend mode the Toggle bit will output when addressing a cell within a block

being erased. The Toggle bit will stop toggling when the Program/Erase Controller has

suspended the Erase operation.

Figure 8: Toggle flowchart, gives an example of how to use the Data Toggle bit. Figure 14

and Figure 15 describe Toggle bit timing waveform.

M29 W320ET , M29W320EB Sta tu s regi ster

31/65

5.3 Error bit (DQ5)

The Error bit can be used to identify errors detected by the Program/Erase Controller. The

Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the

correct data to the memory. If the Error bit is set a Read/Reset command must be issued

before other commands are issued. The Error bit is output on DQ5 when the Status register

is read.

Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to

do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.

One of the Erase commands must be used to set all the bits in a block or in the whole

memory from ’0’ to ’1’.

5.4 Erase Timer bit (DQ3)

The Erase Timer bit can be used to identify the start of Program/Erase Controller operation

during a Block Erase command. Once the Program/Erase Controller starts erasing the

Erase Timer bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer bit

is set to ’0’ and additional blocks to be erased may be written to the Command interface.

The Erase Timer bit is output on DQ3 when the Status register is read.

5.5 Alternative Toggle bit (DQ2)

The alternative Toggle bit can be used to monitor the Program/Erase controller during Erase

operations. The alternative Toggle bit is output on DQ2 when the Status register is read.

During Chip Erase and Block Erase operations the Toggle bit changes from ’0’ to ’1’ to ’0’,

etc., with successive Bus Read operations from addresses within the blocks being erased.

A protected block is treated the same as a block not being erased. Once the operation

completes the memory returns to Read mode.

During Erase Suspend the alternative Toggle bit changes from ’0’ to ’1’ to ’0’, etc. with

successive Bus Read operations from addresses within the blocks being erased. Bus Read

operations to addresses within blocks not being erased will output the memory cell data as if

in Read mode.

After an Erase operation that causes the Error bit to be set the alternative Toggle bit can be

used to identify which block or blocks have caused the error. The alternative Toggle bit

changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses

within blocks that have not erased correctly. The alternative Toggle bit does not change if

the addressed block has erased correctly.

Status register M29W320ET, M29W320EB

32/65

Table 7. Status reg ister bits(1)

1. Unspecified data bits should be ignored.

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB

Program Any Address DQ7 Toggle0––0

Program during

Erase Suspend Any Address DQ7 Toggle0––0

Program Error Any Address DQ7 Toggle 1 – – Hi-Z

Chip Erase Any Address 0 Toggle 0 1 Toggle 0

Block Erase before

timeout

Erasing Block 0 Toggle 0 0 Toggle 0

Non-Erasing Block 0 Toggle 0 0 No

To g g le 0

Block Erase

Erasing Block 0 Toggle 0 1 Toggle 0

Non-Erasing Block 0 Toggle 0 1 No

To g g le 0

Erase Suspend

Erasing Block 1 No

To g g le 0 – Toggle Hi-Z

Non-Erasing Block Data read as normal Hi-Z

Erase Error

Good Block

Address 0 Toggle 1 1 No

To g g le Hi-Z

Faulty Block

Address 0 Toggle 1 1 Toggle Hi-Z

M29 W320ET , M29W320EB Sta tu s regi ster

33/65

Figure 7. Data Pol ling flowc har t

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

at VALID ADDRESS

FAIL PASS

AI90194

DQ7

DATA YES

YES

DQ5

= 1

DQ7

DATA YES

Status register M29W320ET, M29W320EB

34/65

Figure 8. Togg le flowcha rt

1. BA = Address of Block being Programmed or Erased.

READ DQ6

ADDRESS = BA

START

READ DQ6

TWICE

ADDRESS = BA

FAIL PASS

AI08929b

DQ6

TOGGLE NO

YES

DQ5

= 1

YES

DQ6

TOGGLE

READ

DQ5 & DQ6

ADDRESS = BA

M29 W320ET , M29W320EB Ma ximum rating

35/65

6 Maximum rating

Stressing the device above the rating listed in the absolute maximum ratings table may

cause permanent damage to the device. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability. These are stress ratings only and

operation of the device at these or any other conditions above those indicated in the

Operating sections of this specification is not implied. Refer also to the Numonyx SURE

Program and other relevant quality documents.

Table 8. Absol u te ma xi mum ra tings

Symbol Parameter Min Max Unit

TBIAS Temperature under Bias –50 125 °C

TSTG Storage Temperature –65 150 °C

VIO Input or Output voltage (1)(2)

1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.

2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.

–0.6 VCC +0.6 V

VCC Supply voltage –0.6 4 V

VID Identification voltage –0.6 13.5 V

VPP(3)

3. VPP must not remain at 12V for more than a total of 80hrs.

Program voltage –0.6 13.5 V

DC and ac p arameters M29W320ET, M29W320EB

36/65

7 DC and ac parameters

This section summarizes the operating measurement conditions, and the dc and ac

characteristics of the device. The parameters in the dc and ac characteristics tables that

follow, are derived from tests performed under the measurement conditions summarized in

Table 9: Operating and ac measurement conditions. Designers should check that the

operating conditions in their circuit match the operating conditions when relying on the

quoted parameters.

Fig u re 9. AC measureme nt I/ O waveform

Figure 10. AC measureme nt Load circuit

Table 9. Operating and ac measure m ent conditions

Parameter

M29W320ET, M29W320EB

Unit70 90

Min Max Min Max

VCC Supply voltage 2.7 3.6 2.7 3.6 V

Ambient operating temperature –40 85 –40 85 °C

Load capacitance (CL)3030pF

Input Rise and Fall times 10 10 ns

Input Pulse voltages 0 to VCC 0 to VCC V

Input and Output Timing Ref. voltages VCC/2 VCC/2 V

AI05557

VCC

VCC/2

AI05558

CL includes JIG capacitance

DEVICE

UNDER

TEST

25kΩ

VCC

25kΩ

VCC

0.1µF

VPP

0.1µF