DSI45-16AR Standard Rectifier VRRM = 1600 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-16AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSI45-16AR Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 1600 V TVJ = 25C 40 A VR = 1600 V TVJ = 150C 1.5 mA TVJ = 25C 1.26 V 1.57 V 1.23 V IF = forward voltage drop min. 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 150 C TC = 100C 1.66 V T VJ = 175 C 45 A TVJ = 175 C 0.81 V sine 180 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 9.1 m 0.9 K/W K/W 0.25 TC = 25C 165 W t = 10 ms; (50 Hz), sine TVJ = 45C 480 A t = 8,3 ms; (60 Hz), sine VR = 0 V 520 A t = 10 ms; (50 Hz), sine TVJ = 150 C 410 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 440 t = 10 ms; (50 Hz), sine TVJ = 45C 1.15 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.13 kAs TVJ = 150 C 840 As 805 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 18 pF 20130215a DSI45-16AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 175 C Weight 6 FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.4 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking IXYS Logo Part No. YYWW Z Date Code abcd UL listed Assembly Code Assembly Line Ordering Standard Part Number DSI45-16AR Similar Part DSI45-16A DSI45-12A DSI45-08A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI45-16AR Package TO-247AD (2) TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 480428 Voltage class 1600 1200 800 T VJ = 175C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 6.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSI45-16AR Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b 2x b2 c Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a DSI45-16AR Rectifier 400 80 1200 VR = 0 V 50 Hz, 80% VRRM 70 1000 360 60 50 IF 600 [A2s] 280 30 TVJ = 45C I2t IFSM 40 [A] 800 TVJ = 45C 320 [A] TVJ = 150C 400 20 240 TVJ = 150C 125C 25C 10 0 0.5 1.0 200 TVJ = 150C 200 0.001 1.5 0 0.01 V F [V ] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 80 80 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 [W] DC = 1 0.5 0.4 0.33 0.17 0.08 60 IdAVM 40 [A] 20 20 0 0 0 10 20 30 40 50 60 0 IdAVM [A] 50 100 150 200 0 Tamb [C] 50 100 150 200 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 0.8 Zth 0.6 [K/W] Ri ti 1 0.0607 0.0004 2 0.123 0.00256 3 0.2305 0.045 4 0.1628 0.18 i 0.4 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215a