MCC MMBD1501(A) THRU MMBD1505(A) omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features High Conductance l Low Leakage l Surface Mount Package Ideally Suited for Automatic Insertion Low Leakage Diode o l 150 C Junction Temperature l High Conductance 350mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 A D l Polarity: See Diagram l Weight: 0.008 grams ( approx.) C B Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Value Working Inverse Voltage V IV 180 V DC Forward Current IF 600 mA Average Rectified Current Io 200 mA Recurrent Peak Forward Current if 700 mA if(surge) 1.0 2.0 A Pd 350 mW Peak Forward Surge Current @ t=1.0s @t=1.0ms Power Dissipation Thermal Resistance R 357 Operation & Storage Temp. Range Tj, TSTG -55 to +150 o C/W o C Note: 1) These ratings are based on a max. junction temperature of 150 degrees C 2) These are steady state limits. T he factory should be consulted on applications involving pulsed or low duty cycle operation Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Symbol Min Breakdown Voltage BV 200 VF 620 720 800 0.83 0.87 0.9 750 850 950 1.1 1.3 1.5 ----- Forward Voltage Drop Reverse Current Junction Capacitance IR Cj ----- Max F Unit Unit Test Cond. V mV mV mV V V V IR=5.0uA I F=1.0mA IF =10mA IF =50mA IF =100mA IF =200mA IF =300mA 1.0 3.0 10 5.0 nA uA nA uA V R=125V o VR =125V T A =150 C V R=180V o V R =180V T A =150 C 4 pF V R =0V, f=1.0MHz E H G J K DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 .037 .950 www.mccsemi.com .037 .950 inches mm MCC MMBD1501(A) thru MMBD1505(A) 325 Ta= 25C 300 275 250 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 400 1 2 Ta= 25C 2 1 0 130 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 800 700 650 600 550 500 0.1 4 CAPACITANCE (pF) 1.1 1 0.9 0.8 20 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 30 50 100 200 300 3 2.5 2 1.5 1 500 Ta= 25C 3.5 0 IFIF - FORWARD CURRENT (mA) I - CURRENT (mA) 500 IR 400 300 CU RR EN T ST EA D Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 -F OR WA RD 50 100 150 TA - AMBIENT TEMPERATURE ( o C) 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 POWER DERATING CURVE 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 2 500 PD - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 10 CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V Ta= 25C 10 Ta= 25C 750 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 1.2 205 150 170 190 VR - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature VVFF - FORWARD VOLTAGE (mV) 450 VF - FORWARD VOLTAGE (V) VVFF - FORWARD VOLTAGE (mV) Ta= 25C 500 350 3 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA 550 REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts IR - REVERSE CURRENT (nA) VR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) www.mccsemi.com 200 MCC MMBD1501(A) thru MMBD1505(A) CONNECTION DIAGRAMS 3 11 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 3 1501 3 2 NC 1 1 2 3 3 1504 1503 1505 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 1 2 1 2 A11 A13 A14 A15 www.mccsemi.com