Features
l Low Leakage
l Surface Mount Package Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
l High Conductance
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic Symbol Value Unit
Working Inverse Voltage VIV 180 V
DC Forward Current IF600 mA
Average Rectified Current Io 200 mA
Recurrent Peak Forward Current if700 mA
Peak Forward Surge Current @
@t=1.0ms
if(surge) 1.0
2.0 A
Power Dissipation Pd 350 mW
Thermal Resistance R357 oC/W
Operation & Storage Temp. Range Tj, TSTG -55 to +150 oC
Note: 1) These ratings are based on a max. junction temperature of 150 degrees C
2) These are steady state limits. T he factory should be consulted on applications
involving pulsed or low duty cycle operation
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic Symbol Min Max Unit Test Cond.
Breakdown Voltage
B
V
200
V
I
R
=5.0uA
Forward Voltage Drop VF
620
720
800
0.83
0.87
0.9
750
850
950
1.1
1.3
1.5
mV
mV
mV
V
V
V
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
Reverse Current IR-----
1.0
3.0
10
5.0
nA
uA
nA
uA
V
R
=125V
VR=125V TA=150oC
VR=180V
V
R
=180V T
A
=150
o
C
Junction Capacitance Cj ----- 4 pF VR=0V, f=1.0MHz
MMBD1501(A)
THRU
MMBD1505(A)
High Conductance
Low Leakage Diode
350mW
t=1.0s
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
www.mccsemi.com
omponents
21201 Itasca Street Chatsworth
!"#
$% !"#
MCC
MMBD1501(A) thru MMBD1505(A)
www.mccsemi.com
MCC
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
3 5 10 20 30 50 100
250
275
300
325
I - REVERSE CURRENT (uA)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
130 150 170 190
0
1
2
3
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 25°C
205
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
1 2 3 5 10 20 30 50 100
350
400
450
500
550
I - FORWARD CURRENT (uA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
500
550
600
650
700
750
800
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
VF
VF
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
050100150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
I - CURRENT (mA)
A
A
I - FORWARD CURRENT STEADY STATE - mA
o
R
F
Io - AVERAGE RECTIFIED CURRENT - mA
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
02468101214
1
1.5
2
2.5
3
3.5
4
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 25°C
15
POWER DERATING CURVE
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
O
D
o
DO-35 Pkg
SOT-23 Pkg
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
10 20 30 50 100 200 300 500
0.8
0.9
1
1.1
1.2
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (V)
F
F
Ta= 25°C
IF
MMBD1501(A) thru MMBD1505(A)
www.mccsemi.com
MCC
CONNECTION DIAGRAMS
3
21
3
21
3
21
3
12 NC
1501
1504 1505
1503
3
12
11
MMBD1503 13 MMBD1503A A13
MARKING
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
MMBD1501 11 MMBD1501A A11
