© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15 1Publication Order Number:
MJE200/D
MJE200G(NPN),
MJE210G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
•High DC Current Gain
•Low Collector−Emitter Saturation Voltage
•High Current−Gain − Bandwidth Product
•Annular Construction for Low Leakage
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCB 25 Vdc
Emitter−Base Voltage VEB 8.0 Vdc
Collector Current − Continuous IC5.0 Adc
Collector Current − Peak ICM 10 Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD15
0.12 W
mW/_C
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD1.5
0.012 W
mW/_C
Operating and Storage Junction
Temperature Range TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.34 _C/W
Thermal Resistance, Junction−to−Ambient RqJA 83.4 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
http://onsemi.com
MJE200G TO−225
(Pb−Free) 500 Units / Box
MARKING DIAGRAM
Y = Year
WW = Work Week
JE2x0 = Device Code
x = 0 or 1
G = Pb−Free Package
MJE210G TO−225
(Pb−Free) 500 Units / Box
MJE210TG TO−225
(Pb−Free) 500 Units / Box
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP NPN
TO−225
CASE 77−09
STYLE 1
123
YWW
JE2x0G
MJE200G (NPN), MJE210G (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0) VCEO(sus) 25 − Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ICBO −
−100
100 nAdc
mAdc
Emitter Cutoff Current
(VBE = 8.0 Vdc, IC = 0) IEBO − 100 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 5.0 Adc, VCE = 2.0 Vdc)
hFE 70
45
10
−
180
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat) −
−
−
0.3
0.75
1.8
Vdc
Base−Emitter Saturation Voltage (Note 1)
(IC = 5.0 Adc, IB = 1.0 Adc) VBE(sat) − 2.5 Vdc
Base−Emitter On Voltage (Note 1)
(IC = 2.0 Adc, VCE = 1.0 Vdc) VBE(on) − 1.6 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT65 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJE200G
MJE210G
Cob
−
−80
120
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300Ăms, Duty Cycle [ 2.0%.
2. fT = ⎪hfe⎪• ftest.
16
20
Figure 1. Power Derating
T, TEMPERATURE (°C)
040 60 100 120 160
12
PD, POWER DISSIPATION (WATTS)
1.6
0
1.2
8.0 0.8
4.0 0.4
80 140
TC
PD, POWER DISSIPATION (WATTS)
TA
MJE200G (NPN), MJE210G (PNP)
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3
Figure 2. Switching Time Test Circuit
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
1
0.01 0.03 0.05 0.50.20.1 0.3 10
Figure 3. Turn−On Time
3
2
5213
tr
MJE200
MJE210
0.02
t, TIME (ms)
0.01
0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL RESISTANCE
qJC(t) = r(t) qJC
qJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
(NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 30
7.0
0.7 BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 5. Active Region Safe Operating Area
500ms
dc
5.0
20107.05.03.02.01.0
100ms
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
3.0
0.3
1.0ms
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
MJE200G (NPN), MJE210G (PNP)
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4
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn−Off Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 105213
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
20 40
100
200
50
Figure 7. Capacitance
70
20106.04.02.01.00.4
C, CAPACITANCE (pF)
0.6
TJ = 25°C
Cib
Cob
MJE200 (NPN)
MJE210 (PNP)
30
MJE200
MJE210
IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain
Figure 9. “On” Voltage
IC, COLLECTOR CURRENT (AMP)
200
400
0.07 0.1 0.3 5.00.05
100
80
60
40
0.2
20
0.7 1.0 3.02.00.5
25°C
TJ = 150°C
-55°C
2.0
0.05
IC, COLLECTOR CURRENT (AMP)
5.0
1.6
1.2
0.8
0.4
03.02.00.07 0.20.1 0.50.3 1.00.7
TJ = 25°C
V, VOLTAGE (VOLTS)
NPN
MJE200
PNP
MJE210
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
200
400
100
80
60
40
20
hFE, DC CURRENT GAIN
25°C
TJ = 150°C
-55°C
VCE = 1.0 V
VCE = 2.0 V
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
2.0
0.05
1.6
1.2
0.8
0.4
03.02.00.07 0.20.1 0.50.3 1.00.7
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
VCE = 1.0 V
VCE = 2.0 V
5.0
MJE200G (NPN), MJE210G (PNP)
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5
IC, COLLECTOR CURRENT (AMP)
qVC for VCE(sat)
qVB for VBE
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
IC, COLLECTOR CURRENT (AMP)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.5
+2.0
+1.5
+1.0
0
-0.5
-1.0
-1.5
-2.0
+0.5
-2.5
0.07 0.1 0.3 5.00.05 0.2 0.7 1.0 3.02.00.5
*qVC for VCE(sat)
qVB for VBE
*APPLIES FOR IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
Figure 10. Temperature Coefficients
MJE200G (NPN), MJE210G (PNP)
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6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
ec
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
123321
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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MJE200/D
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